Electrical properties of Ta–Sn–O films on indium tin oxide electrodes

Abstract

We have found that Ta–Sn–O films prepared on indium tin oxide (ITO) electrodes by magnetron cosputtering of Ta2O5 and SnO2 have much higher breakdown field strength than the Ta2O5 films on the ITO electrodes. The highly insulating Ta–Sn–O films were obtained in the Sn concentration range of 3–40 at. %. The figure of merit, which was defined by the multiplication of the breakdown field strength by the relative dielectric constant, of the Ta–Sn–O films was found to become a maximum in the Sn concentration of about 3 at. %. The experimental results of temperature dependence of the leakage currents indicated that the conduction mechanisms at room temperature changed from Poole–Frenkel type to Fowler–Nordheim tunneling type by adding SnO2 into Ta2O5 films.

Development of Dielectric Properties of Niobium Oxide, Tantalum Oxide, and Aluminum Oxide Based Nanolayered Materials

“…Nevertheless, it is desirable to discover new artificial composite or solid solution materials providing high permittivity values without loss in insulating properties. Materials of variable composition, for instance, Hf-Sn-Ti-O 18 or Ta-Sn-O 19 and Al 2 O 3 -SiO 2 sandwiched structures 20 have been studied. Alterna-tively, doped binary dielectrics like TiO 2 :Nd 21 or TiO 2 :Al 6 have been investigated.…”

Quantum mechanical tunneling through a biased double-cascaded barrier

“…This behavior is fully discussed in previous publications. [1][2][3][4][5][6][7][8] In the high biasing region at VϾ S , the electrical transport through the structure is expected to be dominated by tunneling where the current is changing by about five orders of magnitude. Gate biasing has an effect on S and on the I -V curve behavior.…”

“…[1][2][3][4] The high dielectric constant (Ϸ25) of this structure relative to SiO 2 (Ϸ3 -4) makes it attractive for downscaling the physical dimensions of very large scale integration ͑VLSI͒ devices. [1][2][3][4] The high dielectric constant (Ϸ25) of this structure relative to SiO 2 (Ϸ3 -4) makes it attractive for downscaling the physical dimensions of very large scale integration ͑VLSI͒ devices.…”

Post annealing effects on the properties of sputtered nano‐crystallite indium tin oxide thin films on flexible polyimide substrate

“…1 Introduction Indium tin oxide (ITO) thin films deposited on glass substrates are widely used as transparent electrode in various optoelectronic devices [1][2][3][4][5][6][7]. During last decades numerous deposition methods have been used to prepare ITO films and the effect of various deposition and post deposition parameters on the properties of ITO films has been comprehensively investigated [8][9][10][11][12][13][14][15][16][17].…”