Electrical properties of the p +-Bi2Te3-p-GaSe isotype heterostructure

Drapak, S. I.; Manasson, Vladimir A.; Netyaga, V. V.; Kovalyuk, Z. D.

doi:10.1134/1.1548660

Cited by 8 publications

(10 citation statements)

References 9 publications

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“…50 However, electroluminescence under forward bias was observed only in a few cases. 587,[590][591][592][593][594][595][596][597] In other cases the p-n heterojunctions were considered for uses as ultraviolet photodetectors ͑PDs͒, and their photoresponse properties were studied. Among the transparent conductive oxide ͑TCO͒ materials available, ZnO is promising for PDs due to its good electrical and optical properties in addition to its low costs, nontoxicity, and relatively low deposition temperature.…”

Section: Heterostructure Devicesmentioning

confidence: 99%

A comprehensive review of ZnO materials and devices

Özgür

Alivov

Liu

et al. 2005

Journal of Applied Physics

10,425

163

3,715

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Undoped and Ga-and Al-doped ZnO films were synthesized using sol-gel and spin coating methods and characterized by X-ray diffraction, high-resolution scanning electron microscopy (SEM), optical spectroscopy and Hall-effect measurements. SEM measurements reveal an average grain size of 20 nm and distinct individual layer structure. Measurable conductivity was not detected in the unprocessed films; however , annealing in hydrogen or zinc environment induced significant conductivity (∼10 −2 Ω.cm) in most films. Positron annihilation spectroscopy measurements provided strong evidence that the significant enhancement in conductivity was due to hydrogen passivation of Zn vacancy related defects or elimination of Zn vacancies by Zn interstitials which suppress their role as deep acceptors. Hydrogen passivation of cation vacancies is shown to play an important role in tuning the electrical conductivity of ZnO, similar to its role in passivation of defects at the Si/SiO2 interface that has been essential for the successful development of complementary metal-oxide-semiconductor (CMOS) devices. By comparison with hydrogen effect on other oxides, we suggest that hydrogen may play a universal role in oxides passivating cation vacancies and modifying their electronic properties. © 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license

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Section: Heterostructure Devicesmentioning

confidence: 99%

A comprehensive review of ZnO materials and devices

Özgür

Alivov

Liu

et al. 2005

Journal of Applied Physics

10,425

163

3,715

View full text Add to dashboard Cite

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“…Drapak [109] obtained electroluminescence (EL) from a Cu 2 O/ZnO structure many decades ago. Tsurkan et al [110] grew p-ZnTe on n-ZnO substrates and observed EL under forward bias.…”

Section: Light Emitting Devicesmentioning

confidence: 99%

Preparation and properties of ZnO and devices

Izyumskaya

Avrutin

Özgür

et al. 2007

Physica Status Solidi (b)

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ZnO has gained interest in part because of its large exciton binding energy (60 meV), good for lasing with low threshold. The renewed interest in ZnO is fuelled by availability of high quality substrates, reports of p-type conductivity, and ferromagnetic behavior when doped with transitions metals. The field is also fuelled by theoretical predictions and perhaps experimental confirmation of ferromagnetism at room temperature for potential spintronics applications. Despite great strides there are still many challenges, the chief among them is the attainment of reproducibly low resistivity p-type ZnO. While ZnO already has many industrial applications owing to its piezoelectric properties and bandgap in the near UV, its applications to optoelectronic devices utilizing electrical injection has not yet been put to practice mainly due to the lack of p-type epitaxial layers. This review provides a discussion of some of the growth issues of ZnObased epitaxial and heteroepitaxial layers and their use in a variety of devices.

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“…The lattice parameter studies date back to 1935 [1], vibrational properties were studied by Raman scattering in 1966 [2], detailed optical properties were investigated in 1954 [3], and its growth by chemical vapor transport was attained in 1970 [4]. In terms of devices, Au Schottky barriers were formed in 1965 [5], LEDs were demonstrated in 1967 [6] wherein Cu2O was used as the p-type material, metal insulator semiconductor (MIS) structures were reported in 1974 [7], ZnO/ZnTe n-p junctions were accomplished in 1975 [8], and Al/Au ohmic contacts were reported in 1978 [9]. Very high quality what used to be called whiskers and platelets, the nomenclature that gave way to nanostructure, of late, have been prepared early on and used to deduce much of the principal properties of this material, particularly the optical properties, albeit with a healthy debate about the valence band ordering and assignment of some of the peaks appearing in optical excitation measurements.…”

Section: Prefacementioning

confidence: 99%