Electrical Properties of the Thin Films Using a Low Temperature Supercritical Carbon Dioxide Fluid Process

Abstract

Abstract-Electrical and physical properties of as-deposited BLTV ferroelectric thin films on SiO 2 /Si(100) substrates were improved by low temperature supercritical carbon dioxide fluid (SCF) process treatment. The as-deposited BLTV ferroelectric thin films were treated by SCF process which mixed with propyl alcohol and pure water. The memory windows increased in C-V curves, and the oxygen vacancy and defect in leakage current density curves were obtained after SCF process treatment. Finally, the improvement properties of as-deposited BLTV thin films after SCF process treatment were investigated by XPS, C-V, and J-E measurement. The mechanism concerning the dependence of electrical properties of the ferroelectric thin films on the SCF process was investigated and discussed.Index Terms-SCF process, BLTV thin film, memory window, leakage current density, NvFeRAM.