Electrical properties of thin metal zinc films

Shabasy, M. El; Hiti, M. A. El; Ahmed, M. A.

doi:10.1007/bf00714079

Cited by 9 publications

(5 citation statements)

References 5 publications

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“…It was found that the transmission decreased exponentially from 98% at 5 nm to 55% at 10 nm and to 19% at 20 nm for the MgAg film, and from 85% at 5 nm to 50% at 10 nm and to 16% at 20 nm for the Ni film. In addition, it has been reported that the electrical conductivity of thin metallic films decreases as the film thickness increases due to the filling of the empty channels between the isolated islands of thin metallic films and the transformation of metallic films from discontinuous to continuous films [12]. Therefore, a 10 nm of metal layer was selected in this study for keeping good both electric conductivity and transmission.…”

Section: Methodsmentioning

confidence: 99%

High-efficiency transparent organic light-emitting diode with one thin layer of nickel oxide on a transparent anode for see-through-display application

Wei¹,

Yamamoto²,

Ichikawa³

et al. 2007

Semicond. Sci. Technol.

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Work function of different species of metal oxide has been investigated, and of nickel oxide was found to reach about 5.4 eV, much higher than those of other metal species and indium tin oxide (ITO). The transparent organic light-emitting diode using a thin oxidation of nickel film upon ITO as an anode and a thin MgAg layer as a cathode has been fabricated. Device performance was found to improve greatly due to an efficient hole injection from nickel oxide; moreover, the top-emitting intensity was nearly same as the bottom-emitting intensity of device. The current efficiencies of the bottom and top emissions reached about 4.1 and 3.2 cd/A, respectively.2

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Section: Methodsmentioning

confidence: 99%

High-efficiency transparent organic light-emitting diode with one thin layer of nickel oxide on a transparent anode for see-through-display application

Wei¹,

Yamamoto²,

Ichikawa³

et al. 2007

Semicond. Sci. Technol.

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“…The almost continuous layer of Zn, formed over the original AZO surface of 2AZO6 film, may also take part in charge transport process and increases the resistivity slightly since it is well-established that an ultrathin metal thin film acts like an insulator. 53 Figure 5b,c shows the variation of mobility and carrier concentration of various AZO films, respectively, with time. Those values change insignificantly over a time period of 60 days for the AZO films with a Zn overlayer; however, for 2AZO0 film, they decrease gradually with time.…”

Section: Resultsmentioning

confidence: 99%

“…The decrease in mobility can be ascribed to an increase in scattering defects, which in turn implies an excess Zn diffusion as per Raman and XPS data, forming various defects, which affect the charge transport within the films. The almost continuous layer of Zn, formed over the original AZO surface of 2AZO6 film, may also take part in charge transport process and increases the resistivity slightly since it is well-established that an ultrathin metal thin film acts like an insulator Figure b,c shows the variation of mobility and carrier concentration of various AZO films, respectively, with time.…”

Section: Resultsmentioning

confidence: 99%

Interaction of an Ultrathin Zinc Surface Passivation Layer with a Room Temperature-Deposited Al-Doped ZnO Film Leading to Highly Improved Electrical Transport Properties

Pal

Basak

2023

J. Phys. Chem. C

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In this study, we have demonstrated the interaction of an ultrathin Zn surface passivation layer with a room temperature (RT)-deposited Al-doped ZnO (AZO) film, leading to highly improved electrical transport properties. The resistivity of the AZO film increases monotonically with time in ambient conditions (from 0.02 to 0.33 Ω·cm), while overlaying a 4 nm Zn layer on AZO film stabilizes the resistivity to a value of 4.56 × 10–3 Ω·cm, which decreases to a value of 2.40 × 10–3 Ω·cm for a 5.3 nm Zn overlayer. The remarkable enhancement in the electrical stability and the conductivity value is attributed to a probable diffusion of Zn species into the AZO films, passivating Zn vacancy (VZn) and forming Zn interstitial (Zni), Zni-VO donor complexes supported by RT Raman and X-ray photoelectron spectroscopy studies. Temperature-dependent resistivity measurement reveals the semiconducting behavior of the AZO films with 4 and 6 nm Zn overlayer, where the transport process is governed by thermally activated band conduction at and below RT (up to ∼247 K), followed by nearest-neighbor hopping and Mott variable range hopping mechanisms as the temperature goes down. The 5.3 nm Zn-coated AZO film shows metallic behavior at RT and a metal to semiconductor transition ∼220 K deviating from the Boltzmann conduction process due to electron–electron interaction phenomena.

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“…This is due to the higher Zn deposition thickness. Because the temperature coefficient of resistivity increases as the film thickness increases [48]. Stone paper and Limex RTDs show minimal differences in resistance during heating and cooling cycles as compared to marble and brick RTDs, which have a larger hysteresis.…”

Section: Rtds Sensing Performance and Reliabilitymentioning

confidence: 99%

Application of Stone-Derived Substrates in Thin-Film Temperature Sensing

Saeedzadeh Khaanghah,

Oliveira,

Krik

et al. 2024

IEEE Sensors J.

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Advancements in materials and technologies have enabled thin-film electronics to be directly developed on previously unsuitable substrates. This paper explores the fabrication of two thin-film temperature sensors, thermistors and resistance temperature detectors (RTD), using stone-based substrates, including marble, brick, stone paper, and Limex paper. The thermistors and RTDs were fabricated utilizing Cu / InGaZnO and Zn, applying the sputtering deposition technique. The sensor's performance was analyzed based on two different heating methodologies: one using a hotplate, and the other using a localized heating from above. The sensors' performance was characterized within a temperature range of 25 • C to 80 • C. While the marble thermistor demonstrated the highest sensitivity among all thermistors at −11.54 % • C −1 , the stone paper RTD similarly showed the highest sensitivity among all RTDs at 0.77 • C −1 . The localized heating methodology on top of RTDs resulted in the stone paper and Limex showing negligible hysteresis. Moreover, the sensors demonstrated stable behavior in the multiple reliability tests. Furthermore, Zn-based RTDs were dissolvable in less than 36 hours. The outcomes show that stone-based materials are promising natural eco-friendly substrates for temperature sensors leading to less hazardous electronic waste.

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Electrical properties of thin metal zinc films

Cited by 9 publications

References 5 publications

High-efficiency transparent organic light-emitting diode with one thin layer of nickel oxide on a transparent anode for see-through-display application

High-efficiency transparent organic light-emitting diode with one thin layer of nickel oxide on a transparent anode for see-through-display application

Interaction of an Ultrathin Zinc Surface Passivation Layer with a Room Temperature-Deposited Al-Doped ZnO Film Leading to Highly Improved Electrical Transport Properties

Application of Stone-Derived Substrates in Thin-Film Temperature Sensing

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