Electrical property dependence on thickness and morphology of nanocrystalline diamond thin films

Iák, T.; Vojs, Marián; Veselý, M.; Škriniarová, J.; Νovotný, I.; Michalka, M.; Redhammer, R

doi:10.1016/j.mejo.2008.06.095

Cited by 2 publications

(2 citation statements)

References 7 publications

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“…Diamond is an attractive material for sensors, MEMS and MESFET transistors [9,10]. Important feature for such applications is a good conductivity of diamond layers to achieve ohmic contact.…”

Section: Resultsmentioning

confidence: 99%

Measurement Systemwith Hall and a Four Point Probes for Characterization of Semiconductors

Kinder¹,

Mikolášek²,

Donoval³

et al. 2013

Journal of Electrical Engineering

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One of the biggest challenges of communication networks is the video transmission in real time. It requires high demands on the available network capacity and transport mechanisms. Availability of smart mobile devices with batteries, which keep the terminal working for several hours, caused an increased interest in the research of the deployment of video transmission in wireless transmission systems. The presented paper deals with the transmission of video encoded with H.264/AVC (Advanced Video Coding) video coding standard through wireless local area network (WLAN) using the programming environment OPNET Modeller (OM). The test network studied in this work was prepared by combining real and simulated networks, which allows interesting possibilities when working with the OM tools. Such an approach to working with OM allows a detailed video streaming analysis, because the video output was noticeably not only in the form of statistics, but we can see the real impact of transmission failures. Using the OM simulation environment allows to design the transmission systems, which would be difficult to establish in laboratory conditions.

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Section: Resultsmentioning

confidence: 99%

Measurement Systemwith Hall and a Four Point Probes for Characterization of Semiconductors

Kinder¹,

Mikolášek²,

Donoval³

et al. 2013

Journal of Electrical Engineering

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“…The most significant advantages compared to other semiconductors are: wide-bandgap (5.47 eV), very high breakdown voltage (20 MV/cm) and high charge carrier mobility (4500 and 3800 cm 2 /Vs for electrons and holes, resp. ), low dielectric constant, radiation and chemical resistance, high working temperature and possibility to concentrate large power into small area [1][2][3]. Technological methods for both types of doping need to be used for application in active electronic devices.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Characterization of N-Type Zinc Oxide/P-Type Boron Doped Diamond Heterojunction

Marton¹,

Mikolášek²,

Bruncko

et al. 2015

Journal of Electrical Engineering

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Diamond and ZnO are very promising wide-bandgap materials for electronic, photovoltaic and sensor applications because of their excellent electrical, optical, physical and electrochemical properties and biocompatibility. In this contribution we show that the combination of these two materials opens up the potential for fabrication of bipolar heterojunctions. Semiconducting boron doped diamond (BDD) thin films were grown on Si and UV grade silica glass substrates by HFCVD method with various boron concentration in the gas mixture. Doped zinc oxide (ZnO:Al, ZnO:Ge) thin layers were deposited by diode sputtering and pulsed lased deposition as the second semiconducting layer on the diamond films. The amount of dopants within the films was varied to obtain optimal semiconducting properties to form a bipolar p-n junction. Finally, different ZnO/BDD heterostructures were prepared and analyzed. Raman spectroscopy, SEM, Hall constant and I-V measurements were used to investigate the quality, structural and electrical properties of deposited heterostructures, respectively. I-V measurements of ZnO/BDD diodes show a rectifying ratio of 55 at ±4 V. We found that only very low dopant concentrations for both semiconducting materials enabled us to fabricate a functional p-n junction. Obtained results are promising for fabrication of optically transparent ZnO/BDD bipolar heterojunction.K e y w o r d s: boron doped diamond, zinc oxide, Raman spectroscopy, bipolar heterostructure, wide-bandgap

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Electrical property dependence on thickness and morphology of nanocrystalline diamond thin films

Cited by 2 publications

References 7 publications

Measurement Systemwith Hall and a Four Point Probes for Characterization of Semiconductors

Measurement Systemwith Hall and a Four Point Probes for Characterization of Semiconductors

Fabrication and Characterization of N-Type Zinc Oxide/P-Type Boron Doped Diamond Heterojunction

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