Electrical property of nonvolatile memory with SiC nano-particles formed in SiO2

Sol–Gel‐Derived High‐Performance Stacked Transparent Conductive Oxide Thin Films

“…As a result, TCOs such as In 2 O 3 , ZnO, SnO 2 , MoO 3 , and WO 3 currently play important roles in flat-panel displays, 1,2 touch panels, 11 energy-harvesting-device windows, 1,8 and light-emitting diodes. [12][13][14][15][16][17] However, the stacked structure of oxide layers are assembled on substrates by ultra-high vacuum processes such as thermal evaporation, 18 laser ablation, 19,20 atomic layer deposition, 21,22 chemical vapor deposition, 23,24 molecular beam epitaxy, 25 and sputtering, [26][27][28] which require high-energy resources. [12][13][14][15][16][17] However, the stacked structure of oxide layers are assembled on substrates by ultra-high vacuum processes such as thermal evaporation, 18 laser ablation, 19,20 atomic layer deposition, 21,22 chemical vapor deposition, 23,24 molecular beam epitaxy, 25 and sputtering, [26][27][28] which require high-energy resources.…”

“…In particular, many aqueous or non-aqueous sol-gel methods markedly reduce the processing temperature of oxide films, and have recently been used to produce electrical devices including thin film transistors, 13,14 photovoltaic solar cells, 1,29 and memory. [1][2][3][4][7][8][9][12][13][14][15][16][17]21,30 Here, we report tin-doped indium oxide (ITO) and zinc oxide (ZnO) thin films on silica glass substrates that exhibit high-density packing and high performance. Sol-gel-derived coating films need to achieve similar standards to viable vacuum methods to find use in commercial applications.…”

“…1,7 These devices generally contain stacked structures of nano-or microscale organic and/or inorganic layers to maximize device performance. [12][13][14][15][16][17] However, the stacked structure of oxide layers are assembled on substrates by ultra-high vacuum processes such as thermal evaporation, 18 laser ablation, 19,20 atomic layer deposition, 21,22 chemical vapor deposition, 23,24 molecular beam epitaxy, 25 and sputtering, [26][27][28] which require high-energy resources.…”

“…Uniform coating films with multilayer structure are also required for use in electrical devices. [1][2][3][4][7][8][9][12][13][14][15][16][17]21,30 Here, we report tin-doped indium oxide (ITO) and zinc oxide (ZnO) thin films on silica glass substrates that exhibit high-density packing and high performance. The multilayer ZnO/ITO structure is fabricated by sol-gel deposition.…”