Electrical-Readout Microwave-Free Sensing with Diamond

Hrubý, Jaroslav; Bourgeois, Emilie; Soucek, Josef; Siyushev, Petr; Jelezko, Fedor; Wickenbrock, Arne; Nesládek, Miloš; Budker, Dmitry

doi:10.1103/physrevapplied.18.024079

Cited by 3 publications

(3 citation statements)

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“…For optical detection techniques, the photon collection efficiency is inherently limited by the high refractive index of diamond. In addition, the electrical detection technique is particularly advantageous for developing and integrating quantum sensors and other quantum devices [20,22]. Nevertheless, there has been no demonstration of electrically detected N-V-based quantum sensing using spin coherence controlled by microwave (MW) pulses, which corresponds to quantum coherence defined by Degen et al [2] to describe the quantum sensor.…”

Section: Introductionmentioning

confidence: 99%

“…Nevertheless, there has been no demonstration of electrically detected N-V-based quantum sensing using spin coherence controlled by microwave (MW) pulses, which corresponds to quantum coherence defined by Degen et al [2] to describe the quantum sensor. Although electrically detected MWfree sensing [22] and dc magnetic field sensing with the continuous-wave PDMR technique [23] have been reported, a method that combines electrical readout and pulse control is difficult to implement because electrical detection is susceptible to noise currents from fluctuating magnetic field environments. By applying a phase-cyclingbased noise-canceling technique [24] to suppress the noise current induced by a fluctuating magnetic environment, in this study, we demonstrate the electrical detection of an ac magnetic field using N-V electron-spin coherence.…”

Section: Introductionmentioning

confidence: 99%

“…The PDMR signal of N-V centers is a spin-dependent photocurrent change resulting from the charge-state conversion between N-V − and N-V 0 [15][16][17][18][19][20][21][22][25][26][27][28]. The photocarriers (electrons and holes) are generated under 532nm laser illumination following the steps illustrated in Fig.…”

Section: Introductionmentioning

confidence: 99%

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Spin-Dependent Dynamics of Photocarrier Generation in Electrically Detected Nitrogen-Vacancy-Based Quantum Sensing

et al. 2023

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Electrical detection of nitrogen-vacancy (N-V) centers in diamond is advantageous for developing and integrating quantum information processing devices and quantum sensors and has the potential to achieve a higher collection efficiency than that of optical techniques. However, the mechanism for the electrical detection of N-V spins is not fully understood. In this study, we observe positive contrast in photocurrent detected magnetic resonance (PDMR). Note that negative PDMR contrast is usually observed. To discuss the sign of the PDMR contrast, we numerically analyze the dynamics of photocarrier generation by N-V centers using a seven-level rate model. It is found that the sign of the PDMR contrast depends on the difference in the photocurrent generated from the excited states and the metastable state of N-V centers. Furthermore, we demonstrate ac magnetic field sensing using spin coherence with the PDMR technique. ac magnetic field measurement with the PDMR technique is still challenging because the noise from a fluctuating magnetic environment is greater than the measured signal. Here, we introduce noise suppression using a phase-cycling-based noise-canceling technique. We demonstrate electrically detected ac magnetic field sensing with a sensitivity of 29 nT Hz −1/2 . Finally, we discuss sensitivity enhancement based on the proposed model.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Spin-Dependent Dynamics of Photocarrier Generation in Electrically Detected Nitrogen-Vacancy-Based Quantum Sensing

et al. 2023

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3D‐Mapping and Manipulation of Photocurrent in an Optoelectronic Diamond Device

Wood,

McCloskey,

Dontschuk

et al. 2024

Advanced Materials

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Establishing connections between material impurities and charge transport properties in emerging electronic and quantum materials, such as wide‐bandgap semiconductors, demands new diagnostic methods tailored to these unique systems. Many such materials host optically‐active defect centers which offer a powerful in situ characterization system, but one that typically relies on the weak spin‐electric field coupling to measure electronic phenomena. In this work, charge‐state sensitive optical microscopy is combined with photoelectric detection of an array of nitrogen‐vacancy (NV) centers to directly image the flow of charge carriers inside a diamond optoelectronic device, in 3D and with temporal resolution. Optical control is used to change the charge state of background impurities inside the diamond on‐demand, resulting in drastically different current flow such as filamentary channels nucleating from specific, defective regions of the device. Conducting channels that control carrier flow, key steps toward optically reconfigurable, wide‐bandgap optoelectronics are then engineered using light. This work might be extended to probe other wide‐bandgap semiconductors (SiC, GaN) relevant to present and emerging electronic and quantum technologies.

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