Electrical resistance and activation energy of amorphous Ni-Si-B alloy film

Abstract

The sheet resistance Rs and tmperature coefficient o f resistance (TCR) ci (25-100°C) 'of amorphous NiggSi15B17 f i l m s have been measured. The structure of f i h s with Rs between 80-550R/sq. are more stable and have a lower TCR (10-6K-1-10-5K-1). may change I n t h i s mnge of Rs, TCR its sign, and the activation energy is much larger.