Electrical Resistivity of Boron

Greiner, E. S.; Gutowski, J.

doi:10.1063/1.1722660

Cited by 46 publications

(24 citation statements)

References 3 publications

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“…Electrical connections were made to the samples with tungsten wire, using a small amount of platinum as an alloying or bonding agent. Our values agree most closely with those of Greiner and Gutowski (5). The boron samples were not precisely cut, but were of such dimensions that the resistance values are numerically within 3-7 times the absolute resistivity in ohm centimeters.…”

Section: Resultssupporting

confidence: 88%

Floating Zone Refining of Boron Using Electron Beam Melting

Hood¹,

Thurston²

1962

J. Electrochem. Soc.

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During the course of a variety of experimental work on transition metal borides (1-3), unusual behavior was found in heated mixtures of the Group IVa metal diborides with tungsten and molybdenum.[Experimental methods are described in detail in ref.(1).]All three of the diborides were found to behave differently when mixed with tungsten powder and heated. TiB~ formed what appeared to be a ternary compound with W (at roughly 50-50 mole %). The compound could be indexed in orthorhombic symmetry, by its close analogy to TaB, and had lattice parameters of ao = 3.180--0.008A, bo = 8.462_+ 0.006A, and co = 3.071 _ 0.003A. HfB=, when heated ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 130.207.50.37 Downloaded on 2014-12-09 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 130.207.50.37 Downloaded on 2014-12-09 to IP

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Section: Resultssupporting

confidence: 88%

Floating Zone Refining of Boron Using Electron Beam Melting

Hood¹,

Thurston²

1962

J. Electrochem. Soc.

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“…7 was not measured near the ingot edge, where the carbon contamination was prominent, but around the center of the CeB 6 surface. CeB 6 has good electric conductivity (the order of 10 m cm) (Greiner & Gutowski, 1957), while pure boron is a semi-metal whose resistivity is of the order of 1-10 M cm at RT (Tanaka et al, 1980). Considering that the electric conductivity of boron-based materials is sensitive to their chemical states, the observed charging behavior supports the possibility that a more salient increase of the B 1s peak than its Ce 4f counterpart (i.e.…”

Section: Resultsmentioning

confidence: 63%

Multilateral surface analysis of the CeB₆ electron-gun cathode used at SACLA XFEL

Ohkochi¹,

Matsuki²,

Ikenaga³

et al. 2021

J Synchrotron Radiat

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The CeB6(001) single crystal used as a cathode in a low-emittance electron gun and operated at the free-electron laser facility SACLA was investigated using cathode lens electron microscopy combined with X-ray spectroscopy at SPring-8 synchrotron radiation facility. Multilateral analysis using thermionic emission electron microscopy, low-energy electron microscopy, ultraviolet and X-ray photoemission electron microscopy and hard X-ray photoemission spectroscopy revealed that the thermionic electrons are emitted strongly and evenly from the CeB6 surface after pre-activation treatment (annealing at 1500°C for >1 h) and that the thermionic emission intensity as well as elemental composition vary between the central area and the edge of the old CeB6 surface.

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“…A one-hour predischarge procedure is performed before deposition for both substrate cleaning and target preheating. Target temperature is increased from room temperature to about 600 • C; target resistivity decreased from 2×10 7 ·cm at room temperature to 3×10 −1 ·cm at 600 • C. 17) This low resistivity makes dc biassing to the pure boron target possible. The substrate is rf biassed with a frequency of 13.56 MHz to enhance ion bombardment by the self-bias effect even after the substrate is covered with an insulating BN layer.…”

Section: Methodsmentioning

confidence: 99%

Ion Bombardment Effects on Boron Nitride Film Synthesis by Reactive Sputtering with Electron Cyclotron Resonance Plasmas

Wakatsuchi¹,

Takaba²,

scshapeKanai³

et al. 1999

Jpn. J. Appl. Phys.

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Boron nitride (BN) films with a high cubic phase content have been synthesized. The films are deposited by reactive sputtering of a pure boron target in electron cyclotron resonance (ECR) plasmas and ion bombardment to a substrate is enhanced by rf biassing of the substrate. A cubic phase of BN is grown over a certain threshold value of ion bombardment energy. The threshold and the cubic phase content depend on the ratio of ion flux to boron atom flux to the substrate. The threshold decreases as the ratio increases; however, the cubic phase content also decreases, particularly in a high ion flux region. BN films with a high cubic phase content show surface cracking and delamination because of the high compressive stress induced by ion bombardment. An intermediate hexagonal BN layer, of a certain thickness between layer with high cubic phase content and the substrate prevents surface cracking and improves film adhesion.

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Electrical Resistivity of Boron

Cited by 46 publications

References 3 publications

Floating Zone Refining of Boron Using Electron Beam Melting

Floating Zone Refining of Boron Using Electron Beam Melting

Multilateral surface analysis of the CeB₆ electron-gun cathode used at SACLA XFEL

Ion Bombardment Effects on Boron Nitride Film Synthesis by Reactive Sputtering with Electron Cyclotron Resonance Plasmas

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Electrical Resistivity of Boron

Cited by 46 publications

References 3 publications

Floating Zone Refining of Boron Using Electron Beam Melting

Floating Zone Refining of Boron Using Electron Beam Melting

Multilateral surface analysis of the CeB6 electron-gun cathode used at SACLA XFEL

Ion Bombardment Effects on Boron Nitride Film Synthesis by Reactive Sputtering with Electron Cyclotron Resonance Plasmas

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Product

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Multilateral surface analysis of the CeB₆ electron-gun cathode used at SACLA XFEL