Electrical Spin Driving by 
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-Matrix Modulation in Spin-Orbit Qubits

Crippa, Alessandro; Maurand, Romain; Bourdet, L.; Kotekar‐Patil, Dharmraj; Amisse, A.; Jehl, X.; Sanquer, M.; Laviéville, Romain; Bohuslavskyi, Heorhii; Hutin, Louis; Barraud, S.; Vinet, M.; Niquet, Yann-Michel; Franceschi, S. De

doi:10.1103/physrevlett.120.137702

Cited by 128 publications

(140 citation statements)

References 37 publications

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“…These systems benefit from an even stronger Rashba type of SOI that relies on the HH-LH mixing and is not suppressed by the fundamental band gap [32,33]. In agreement with recent experiments [15,17,[34][35][36][37][38][39][40][41], Si and Ge/Si core/shell nanowires (NWs) are particularly promising platforms for such low-dimensional hole systems. Remarkably, these NWs and QDs therein can be formed with a complementary metal-oxide-semiconductor compatible fabrication process [17,36,38,42,43], which indicates an exceptional scalability.…”

Section: Introductionsupporting

confidence: 77%

Exchange interaction of hole-spin qubits in double quantum dots in highly anisotropic semiconductors

Hetényi

Kloeffel

Loss

2020

Phys. Rev. Research

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We study the exchange interaction between two hole-spin qubits in a double quantum dot setup in a silicon nanowire in the presence of magnetic and electric fields. Based on symmetry arguments we show that there exists an effective spin that is conserved even in highly anisotropic semiconductors, provided that the system has a twofold symmetry with respect to the direction of the applied magnetic field. This finding facilitates the definition of qubit basis states and simplifies the form of exchange interaction for two-qubit gates in coupled quantum dots. If the magnetic field is applied along a generic direction, cubic anisotropy terms act as an effective spin-orbit interaction introducing novel exchange couplings even for an inversion symmetric setup. Considering the example of a silicon nanowire double dot, we present the relative strength of these anisotropic exchange interaction terms and calculate the fidelity of the √ SWAP gate. Furthermore, we show that the anisotropyinduced spin-orbit effects can be comparable to that of the direct Rashba spin-orbit interaction for experimentally feasible electric field strengths.

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Section: Introductionsupporting

confidence: 77%

Exchange interaction of hole-spin qubits in double quantum dots in highly anisotropic semiconductors

Hetényi

Kloeffel

Loss

2020

Phys. Rev. Research

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“…The static spinstrain Hamiltonian (3) and the DFT-based couplingstrength parameters in Table I can be used to estimate the time scale (Rabi time) of spin control for an ac mechanical drive with a given strain pattern. However, it is known from the theory of spin-orbit-mediated electrically driven spin resonance 42,53 , that even if an electric field does not modify the spin Zeeman splitting, it can induce transition between spin states. Hence it is expected that an accurate description of mechanically or electrically driven spin resonance for the NV, which probably involves electronic spin-spin and spin-orbit interactions, requires a careful treatment of dynamical effects.…”

Section: B Open Problemsmentioning

confidence: 99%

Spin-strain interaction in nitrogen-vacancy centers in diamond

et al. 2018

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The interaction of solid-state electronic spins with deformations of their host crystal is an important ingredient in many experiments realizing quantum information processing schemes. Here, we theoretically characterize that interaction for a nitrogen-vacancy (NV) center in diamond. We derive the symmetry-allowed Hamiltonian describing the interaction between the ground-state spin-triplet electronic configuration and the local strain. We numerically calculate the six coupling-strength parameters of the Hamiltonian using density functional theory, and propose an experimental setup for measuring those coupling strengths. The importance of this interaction is highlighted by the fact that it enables to drive spin transitions, both magnetically allowed and forbidden, via mechanically or electrically driven spin resonance. This means that the ac magnetic field routinely used in a wide range of spin-resonance experiments with NV centers could in principle be replaced by ac strain or ac electric field, potentially offering lower power requirements, simplified device layouts, faster spin control, and local addressability of electronic spin qubits.

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“…Luckily, SOC is relatively strong for holes in silicon and allows for more straightforward EDSR manipulations [22]. Typical results [17], [18] are presented on Fig.…”

Section: B Hole Spin Qubitsmentioning

confidence: 99%

Si MOS technology for spin-based quantum computing

Hutin

Bertrand

Maurand

et al. 2018

2018 48th European Solid-State Device Research Conference (ESSDERC)

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We present recent advances made towards the realization of hole and electron spin quantum bits (qubits) localized within Si Quantum Dots (QDs). These devices, operated at cryogenic temperatures, can be defined by slightly modifying an SOI NanoWire FET fabrication flow, and are thus particularly relevant in the perspective of large-scale cointegration of qubits and their cryogenic control electronics. I.

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Electrical Spin Driving by g -Matrix Modulation in Spin-Orbit Qubits

Cited by 128 publications

References 37 publications

Exchange interaction of hole-spin qubits in double quantum dots in highly anisotropic semiconductors

Exchange interaction of hole-spin qubits in double quantum dots in highly anisotropic semiconductors

Spin-strain interaction in nitrogen-vacancy centers in diamond

Si MOS technology for spin-based quantum computing

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