Electrical, structural and optical properties of SnO2:F thin films: Effect of the substrate temperature

Yadav, Abhijit A.; Masumdar, E.U.; Moholkar, A.V.; Neumann‐Spallart, M.; Rajpure, K.Y.; Bhosale, C.H.

doi:10.1016/j.jallcom.2009.08.130

Cited by 127 publications

(62 citation statements)

References 30 publications

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“…FTO is mechanically, chemically and electrochemically stable [3], and it is utilized in numerous technologies including; thin film solar cells [4], dielectric layers in low emissivity coatings for windows [5], in gas sensors applications [6] and in liquid crystal displays [7]. There are a number of methods/techniques to grow SnO2 (either doped or un-doped) films, including chemical vapor deposition [8], pulsed laser deposition [9], DC reactive sputtering [10] and spray pyrolysis [11].…”

Section: Introductionmentioning

confidence: 99%

Electrical and Optical Properties of Fluorine Doped Tin Oxide Thin Films Prepared by Magnetron Sputtering

et al. 2014

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Fluorine doped tin oxide (FTO) coatings have been prepared using the mid-frequency pulsed DC closed field unbalanced magnetron sputtering technique in an Ar/O2 atmosphere using blends of tin oxide and tin fluoride powder formed into targets. FTO coatings were deposited with a thickness of 400 nm on glass substrates. No post-deposition annealing treatments were carried out. The effects of the chemical composition on the structural (phase, grain size), optical (transmission, optical band-gap) and electrical (resistivity, charge carrier, mobility) properties of the thin films were investigated. Depositing FTO by magnetron sputtering is an environmentally friendly technique and the use of loosely packed blended powder targets gives an efficient means of screening candidate compositions, which also provides a low cost operation. The best film characteristics were achieved using a mass ratio of 12% SnF2 to 88% SnO2 in the target. The thin film produced was polycrystalline with a tetragonal crystal structure. The optimized conditions resulted in a thin film with average visible transmittance of 83% and optical band-gap of 3.80 eV, resistivity of 6.71 × 10

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Section: Introductionmentioning

confidence: 99%

Electrical and Optical Properties of Fluorine Doped Tin Oxide Thin Films Prepared by Magnetron Sputtering

et al. 2014

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“…There are many experimental techniques available to prepare undoped and doped SnO 2 , such as pulser laser deposition, spray pyrolysis, reactive evaporation, and sputtering [20][21][22]. The sputtering technique is very controllable, reproductible and has high growth rates.…”

Section: Resultsmentioning

confidence: 99%

Influencia de la potencia de deposición en las propiedades eléctricas y ópticas de películas delgadas de Sn1-xO2Nbx obtenidas por pulverización catódica

Uribe

Jaramillo

Osorio

et al. 2016

Rev. Fac. Ing. Univ. Antioquia

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152lattice. Some authors argue that the reason for coexistence of the conductivity and transparency is related to the presence of shallow donor levels near the conduction band, formed by a large concentration of oxygen vacancies Vo [2]. However, other theoretical results predict that interstitial tin plays a more prominent role than Vo; the oxygen vacancies produce deep levels in the energy gap, but the outermost electrons of interstitial tin produce surface levels within the conduction band, generating a higher amount of charge carriers [1].The most reported TCO in literature is the Indium tin oxide ITO, but due to the high cost of Indium and the fact that it is ranked as 7.6 (being 9.5 the maximum) in the British Geological Survey risk list 2012 [10], in recent years research in alternative TCOs has been intensified [11]. SnO 2 is a good prototype for TCO, since it has a larger energy gap of 3.6 eV and is a material with a transparency above 80% in the visible range [1]. Thin oxide SnO 2 occurs in nature as the mineral cassiterite, which is normally associated with Power deposition influence on the electrical and optical properties of Sn 1-x O 2 Nb x thin films obtained by sputtering ABSTRACT: In a solid, the electrical conductivity and optical transparency seem to be two contradictory physical properties. Conductive materials are opaque, and transparent solids are electrical insulators. Combinations of these two physical properties in a material make it appropriate for application in many optoelectronic devices. The coincidence of these two properties has been mainly ascribed to point defects in the crystal lattice. In this work, we performed structural, electrical and optical characterization of thin films of one of the most promising transparent conductive oxides Sn 1-x O 2 Nb x . The films were grown on glass substrates by RF magnetron sputtering technique. As the deposition power was varied, it was found that the electrical conductivity of the films increased with increasing power deposition, and they showed a preferential growth in the (200) direction. All films exhibited optical transmittance in the visible range larger than 80%. RESUMEN:En un sólido la buena conductividad eléctrica y la transparencia óptica parecen ser 2 propiedades contradictorias. Los materiales conductores son opacos, y los sólidos transparentes son aislantes eléctricos. La combinación de estas dos propiedades en un material lo hacen muy atractivo para una gran cantidad de aplicaciones optoelectrónicas. En este trabajo se realiza la caracterización estructural óptica y eléctrica de uno de los óxidos conductores transparentes más prometedores, el Sn 1-x O 2 Nb x . Las películas fueron crecidas sobre sustratos de vidrio por la técnica de sputtering RF. Al cambiar la potencia de deposición se halló que la conductividad eléctrica de las películas crecía al aumentar la potencia de deposición, lo cual coincidía con un crecimiento preferencial de las películas en el plano (200). Todas las películas muestran una transmitancia mayor al 80 % ...

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“…The change in the absorption coefficient will change the transmittance of the films. Some authors found that the transmittance of thin films increases with the substrate temperature [12,31]; other workers found a decrease in the transmittance with substrate temperature [14] and others found no change in the transmittance of thin films with the substrate temperature [8]. The increase of transmittance with substrate temperature was recorded by Ashour [12] who found an increase of the transmittance with substrate temperature in the range 200-400 °C for undoped spray pyrolyzed CdS thin films of thickness 500 nm.…”

Section: Optical Propertiesmentioning

confidence: 99%

“…From these results it is confirmed that increasing the deposition temperature promotes phase transformation from cubic to hexagonal and improves the crystallinity in CdS films. Fig.1 displays the XRD diffractograms of spray-deposited SnO 2 :F thin films taken at different substrate temperatures by Yadav et al [31]. The grain size of the polycrystalline films greatly depends on the substrate temperature during deposition [1].…”

mentioning

confidence: 99%

The Influence of the Substrate Temperature on the Properties of Solar Cell Related Thin Films

Ikhmayies¹

2012

Modern Aspects of Bulk Crystal and Thin Film Preparation

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Electrical, structural and optical properties of SnO2:F thin films: Effect of the substrate temperature

Cited by 127 publications

References 30 publications

Electrical and Optical Properties of Fluorine Doped Tin Oxide Thin Films Prepared by Magnetron Sputtering

Electrical and Optical Properties of Fluorine Doped Tin Oxide Thin Films Prepared by Magnetron Sputtering

Influencia de la potencia de deposición en las propiedades eléctricas y ópticas de películas delgadas de Sn1-xO2Nbx obtenidas por pulverización catódica

The Influence of the Substrate Temperature on the Properties of Solar Cell Related Thin Films

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