Electrical transport and high thermoelectric properties of PbTe doped with Bi2Te3 prepared by HPHT

Composition-dependent electrical transport properties of Pb50Te52 doped with PbI2 prepared by HPHT

“…3 and 4, both the electrical resistivity and the Seebeck coefficient are very sensitivity to the increase of trace PbI 2 . The phenomenon is consistent with our previous results on PbTe doped with Bi 2 Te 3 and Sb 2 Te 3 [16,17]. Here, we consider that the high pressure might play a primary role in achieving giant Seebeck coefficient and heavily doped semiconductor.…”

“…Recently, Ibrahim et al [31] announced that the power factor of Pb 0.94 Sm 0.06 Se can reach the value, 83.8 W cm −1 K 2 , at 250 K. However, the thermal conductivity would simultaneously increase much by normal pressure preparation method [23]. In contrast, the optimum thermoelectric performance of PbTe-based TE materials would be observed at 500-700 K [30] and the thermal conductivity changed by less than one-half with an increase of dopant amount by HPHT method [16]. It is reasonable to assume that the thermal conductivity does not change strongly and the integrative thermoelectric effectiveness may be competitive in our work.…”

“…The synthetic temperature was set at 1200 K to keep the sample melting adequately, followed by quenching with the rate of 50 K/s. Referring to our previous work [16,17,24], the synthesis time was selected as 15 min in this work. The synthetic pressure was set at 3.5 GPa, at which the samples gained the ideal properties.…”

“…The excess Pb or Te may lead to variation of conductivity type and the electrical transport properties, improve the power factor of PbTe. In addition, doping is also an effective method to improve thermoelectric properties and obtain heavily doped semiconductor, such as group III elements (In and Ga) [15] and compounds Sb 2 Te 3 and Bi 2 Te 3 [16,17]. Doping with these elements effectively obtained unusual effects that were not characterized by the non-doped materials.…”

Fabrication and properties of Bi2S3−xSex thermoelectric polycrystals

“…Bismuth sulfide (Bi 2 S 3 ) with a 1.3 eV direct band gap [7,8] belongs to the family of compounds A 2 B 3 (where A ¼Bi, Sb, Pb and B ¼S, Se, Te), which is considered to be most promising for thermoelectric applications [9][10][11][12]. Chen et al [13].…”