Electrical transport and trap properties in nitrogen-doped p-type MBE-grown ZnSe layers on GaAs using different contact materials

Ternary Cu-Bi-S based compounds have been thought to be alternative materials for well-known CuInS 2 because of their abundance. Cu-Bi-S based nanomaterials have been less studied. We here report the synthesis, optical and electrical properties of single crystal Cu 4 Bi 4 S 9 nanowires. High-quality Cu 4 Bi 4 S 9 nanowires were synthesized through a modified solvothermal route by controlling the reaction sources and temperature. The optical bandgap for Cu 4 Bi 4 S 9 nanowires were determined by using UV-vis-NIR and cyclic voltammetry techniques. Single nanowire devices were fabricated by using lithographic techniques. The devices exhibit photoconductive response with high external quantum efficiency (2.9 Â 10 8 %). Temperature-dependent electrical transport properties were also investigated. We observed that the transport properties of Cu 4 Bi 4 S 9 nanowire show typical semiconductor behaviour in the temperature region 10-140 K and metal-like character in the temperature region of 150-300 K. The carrier transport in Cu 4 Bi 4 S 9 nanowires can be described by the small polaron model in temperature region of 60-140 K and the variable range hopping mechanism in temperature region of 10-50 K. We further studied the properties of Cu 4 Bi 4 S 9 nanowires in field-emission devices. The devices exhibit a relatively low turn-on field (6.9 V mm À1 ). The potential applications of Cu 4 Bi 4 S 9 nanowires as field emitting materials and light absorbers in detectors are indicated.

show abstract

One dimensional ternary Cu–Bi–S based semiconductor nanowires: synthesis, optical and electrical properties

Zhong

Liu

et al. 2012

J. Mater. Chem.

View full text Add to dashboard Cite

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Electrical transport and trap properties in nitrogen-doped p-type MBE-grown ZnSe layers on GaAs using different contact materials

Cited by 1 publication

References 6 publications

One dimensional ternary Cu–Bi–S based semiconductor nanowires: synthesis, optical and electrical properties

One dimensional ternary Cu–Bi–S based semiconductor nanowires: synthesis, optical and electrical properties

Contact Info

Product

Resources

About