Electrical transport properties and room-temperature positive magnetoresistance of Fe3O4/a-C/n-Si junctions

Fan, Ziwei; Li, P.; Zhang, L.T.; Mi, Wenbo; Jiang, E.Y.; Bai, Haili

doi:10.1016/j.tsf.2011.12.051

Cited by 17 publications

(14 citation statements)

References 39 publications

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“…1(a)] I-V curves are clearly characteristics of tunneling case. 2,15,39 To verify this, differential conductivity (dI/dV) versus bias voltage curves at T ¼ 100 and 250 K have been presented in Fig. 1(b).…”

mentioning

confidence: 76%

“…At T ¼ 250 K, dI/dV curve is found to be near-parabolic typical of tunneling conduction. 2,24,35,39 However, at T ¼ 100 K, the characteristics of such curve is totally different and clearly exhibits the beginning of the injection mode at a bias of % 2 V. Thus, we are justified to assign this high temperature conduction mode as achieved through carrier tunneling process. It comes out that there is a drastic change in conductivity mode in a single SV from injection to tunnel mode, as a function of "temperature.…”

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confidence: 90%

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Temperature driven transition from giant to tunneling magneto-resistance in Fe₃O₄/Alq₃/Co spin Valve: Role of Verwey transition of Fe₃O₄

Dey

Rawat

Potdar

et al. 2014

Journal of Applied Physics

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mentioning

confidence: 76%

mentioning

confidence: 90%

Temperature driven transition from giant to tunneling magneto-resistance in Fe₃O₄/Alq₃/Co spin Valve: Role of Verwey transition of Fe₃O₄

Dey

Rawat

Potdar

et al. 2014

Journal of Applied Physics

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“…The results clearly showed that the spin injection and accretion are considered significant factors, which can support a variety of concepts in spintronics devices [12]. However, as a result of the interaction of spin with electron motion, the state of spin can change, which may lead to damage of data in spintronics devices [13]. Regarding the spintronics technology, the integration of multilayer ferromagnetic electrode functional devices is considered a big achievement towards attaining vigorous and accessible tunneling MR.…”

Section: Introductionmentioning

confidence: 94%

Anomalous Non-Linear to Linear Shift in Magnetoresistance of Amorphous Carbon Films

et al. 2019

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Non-linear to linear negative magnetoresistance (MR) was studied under the magnetic field ranging from −7 T to 7 T with a change in measurement temperature from 2 K to 300 K. Under the magnetic field of 7 T, a maximum MR magnitude of 8.2% was observed at 2 K. The chemical vapor deposition technique was adopted to synthesize the amorphous carbon thin films. Non-saturated and non-linear negative MR was observed for the lower temperatures, while 10 K was observed as transition temperature. Afterwards, the more likely linear MR behavior was observed up to 300 K. MR shape change was correlated with the structural morphology of metallic disordered graphitic layers or the random stacking of graphene layers with amorphous carbon. The negative MR mechanism for such a non-linear to linear shift was partially assumed as a combined effect of the diffused scattering theory and the weak localization theory. The negative MR effect has a direct relation with the degree of structural order.

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“…Owing to magnetic field applications, for higher magnetic fields the MR of a-carbon persists unsaturated, and the relationship between magnetotransport and spintronics made the undoped a-carbon a more attractive candidate. A number of studies on the magnetotransport properties of doped a-carbon have been reported, but the area of pure a-carbon is still a popular and active field of research [13][14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Structural and Magnetoresistance Properties of Transfer-Free Amorphous Carbon Thin Films

et al. 2019

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The control of the morphologies and thus the optical, electrical, and magnetic effect of 2D thin films is a challenging task for the development of cost-efficient devices. In particular, the angular dependent magnetoresistance (MR) of surface thin films up to room temperature is an interesting phenomenon in materials science. Here, we report amorphous carbon thin films fabricated through chemical vapor deposition at a SiO2 substrate. Their structural and angular magnetoresistance properties were investigated by several analytical tools. Specifically, we used a physical property measurement system to estimate the magnitude of the angular MR of these as-prepared sample thin films from 2 K to 300 K. An angular MR magnitude of 1.6% for the undoped a-carbon thin films was found up to 300 K. Under the magnetic field of 7 T, these films possessed an angular MR of 15% at a low temperature of 2 K. A high disorder degree leads to a large magnitude of MR. The grain boundary scattering model was used to interpret the mechanism of this angular MR.

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Electrical transport properties and room-temperature positive magnetoresistance of Fe3O4/a-C/n-Si junctions

Cited by 17 publications

References 39 publications

Temperature driven transition from giant to tunneling magneto-resistance in Fe₃O₄/Alq₃/Co spin Valve: Role of Verwey transition of Fe₃O₄

Temperature driven transition from giant to tunneling magneto-resistance in Fe₃O₄/Alq₃/Co spin Valve: Role of Verwey transition of Fe₃O₄

Anomalous Non-Linear to Linear Shift in Magnetoresistance of Amorphous Carbon Films

Structural and Magnetoresistance Properties of Transfer-Free Amorphous Carbon Thin Films

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Electrical transport properties and room-temperature positive magnetoresistance of Fe3O4/a-C/n-Si junctions

Cited by 17 publications

References 39 publications

Temperature driven transition from giant to tunneling magneto-resistance in Fe3O4/Alq3/Co spin Valve: Role of Verwey transition of Fe3O4

Temperature driven transition from giant to tunneling magneto-resistance in Fe3O4/Alq3/Co spin Valve: Role of Verwey transition of Fe3O4

Anomalous Non-Linear to Linear Shift in Magnetoresistance of Amorphous Carbon Films

Structural and Magnetoresistance Properties of Transfer-Free Amorphous Carbon Thin Films

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Temperature driven transition from giant to tunneling magneto-resistance in Fe₃O₄/Alq₃/Co spin Valve: Role of Verwey transition of Fe₃O₄

Temperature driven transition from giant to tunneling magneto-resistance in Fe₃O₄/Alq₃/Co spin Valve: Role of Verwey transition of Fe₃O₄