2020
DOI: 10.1039/c9na00728h
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Electrical transport properties and ultrafast optical nonlinearity of rGO–metal chalcogenide ensembles

Abstract: Photosensitive hybrid composites (rGO–ZnSe and rGO–ZnTe) have been synthesized by a solvothermal method. Comparative study on change in mobility (dark to illumination), photosensitivity and nonlinear optical properties indicate that rGO–ZnTe performs better than rGO–ZnSe.

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Cited by 11 publications
(1 citation statement)
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“…For the commercial diode, as temperature increases, the barrier voltage decreases, as expected in devices with p-n junctions based on semiconductors 61,62 . In the prototypes fabricated in this work, a non-linear effect was observed in the I-V curves for low temperatures up to approximately 140 K, which is consistent with previous reports by Voitsihovska et al 63 , and Rahaman et al 64 Also, for higher temperatures until 300 K, this effect disappears and an ohmic behavior is evidenced, within the foregoing range of currents, this behavior agrees with electrical linear responses for temperatures between 150 and 300 K, as reported by Abid et al 65 , Bonavolontà et al 17 , and Joung and Khondaker 38 in rGO samples. This can be explained considering that, for low temperatures, the effect of the metal-semiconductor junction between the electrical contacts and the GOF sample becomes predominant.…”
Section: Resultssupporting
confidence: 92%
“…For the commercial diode, as temperature increases, the barrier voltage decreases, as expected in devices with p-n junctions based on semiconductors 61,62 . In the prototypes fabricated in this work, a non-linear effect was observed in the I-V curves for low temperatures up to approximately 140 K, which is consistent with previous reports by Voitsihovska et al 63 , and Rahaman et al 64 Also, for higher temperatures until 300 K, this effect disappears and an ohmic behavior is evidenced, within the foregoing range of currents, this behavior agrees with electrical linear responses for temperatures between 150 and 300 K, as reported by Abid et al 65 , Bonavolontà et al 17 , and Joung and Khondaker 38 in rGO samples. This can be explained considering that, for low temperatures, the effect of the metal-semiconductor junction between the electrical contacts and the GOF sample becomes predominant.…”
Section: Resultssupporting
confidence: 92%