Electrical transport properties of an isolated CdS microrope composed of twisted nanowires

Yu, Gui-Feng; Yu, Miao; Pan, Wei; Han, Wenjuan; Xu, Yan; Zhang, Juncheng; Zhang, Hong-Di; Long, Yun-Ze

doi:10.1186/s11671-015-0734-5

Cited by 9 publications

(5 citation statements)

References 50 publications

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“…Our calculated μp from 1.89 x 10 -2 to 1.08 x 10 -1 cm 2 V −1 s −1 for 400 and 500 nm MABr thick samples respectively. These values are within the range of μp for inorganic semiconductors, 10 -4 -10 3 cm 2 V -1 s -1 [80]. However, they are two orders of magnitude lower than values of μp for MAPbBr3 single crystals obtained by the SCLC method.…”

Section: Dark Current-voltage Analyses Of Au/mapbbr3/fto Devicessupporting

confidence: 45%

Synthesis and characterisation of methylammonium lead tri-bromide perovskites thin films by sequential physical vapor deposition

Fru

Nombona

Diale

2020

Physica B: Condensed Matter

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Section: Dark Current-voltage Analyses Of Au/mapbbr3/fto Devicessupporting

confidence: 45%

Synthesis and characterisation of methylammonium lead tri-bromide perovskites thin films by sequential physical vapor deposition

Fru

Nombona

Diale

2020

Physica B: Condensed Matter

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“…This log I−log V plot consists of both HRS and LRS, which have different slopes. The slopes of the HRS state I and II are α=4.28 ( ) µ I V 4.3 and 1.89 ( ) µ I V , 1.9 respectively, which can be regarded as α>1, related to the trap state distribution in the SCLC conduction mechanism [38]. When the negative voltage was applied, the trapped carriers began to be released and the current was increased.…”

Section: Resultsmentioning

confidence: 99%

“…The case of α>2 can be understood in terms of a space-charge-limited current (SCLC) regime that is controlled by the trapped charge density. In this case, the conduction mechanism can be described based on several factors, such as the free carriers induced by impurities/ defects, the deep-trap energy level due to the oxygen vacancies, and the carriers injected from the electrodes [37,38].…”

Section: Resultsmentioning

confidence: 99%

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Schottky nanocontact of one-dimensional semiconductor nanostructures probed by using conductive atomic force microscopy

et al. 2016

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To develop the advanced electronic devices, the surface/interface of each component must be carefully considered. Here, we investigate the electrical properties of metal-semiconductor nanoscale junction using conductive atomic force microscopy (C-AFM). Single-crystalline CdS, CdSe, and ZnO one-dimensional nanostructures are synthesized via chemical vapor transport, and individual nanobelts (or nanowires) are used to fabricate nanojunction electrodes. The current-voltage (I -V) curves are obtained by placing a C-AFM metal (PtIr) tip as a movable contact on the nanobelt (or nanowire), and often exhibit a resistive switching behavior that is rationalized by the Schottky (high resistance state) and ohmic (low resistance state) contacts between the metal and semiconductor. We obtain the Schottky barrier height and the ideality factor through fitting analysis of the I-V curves. The present nanojunction devices exhibit a lower Schottky barrier height and a higher ideality factor than those of the bulk materials, which is consistent with the findings of previous works on nanostructures. It is shown that C-AFM is a powerful tool for characterization of the Schottky contact of conducting channels between semiconductor nanostructures and metal electrodes.

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“…This is consistent with the decrease in trap density and an increase in grain size, leading to less charge carrier scattering in the MAPb(I 1−x Br x ) 3 active layer as MABr thickness is increased. The calculated charge carrier mobility values are within the range for inorganic semiconductors (10 −4 − 10 3 cm 2 V −1 s −1 ) (Yu et al, 2015). However, they are two orders of magnitude lower than values of single crystals calculated using the SCLC method (Saidaminov et al, 2015;Herz, 2017;Chen et al, 2018).…”

Section: Electrical Propertiesmentioning

confidence: 50%

Characterization of Thin MAPb(I1–xBrx)3 Alloy Halide Perovskite Films Prepared by Sequential Physical Vapor Deposition

2021

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Lead iodide (PbI2)-rich methylammonium lead bromide-iodide (MAPb(I1–xBrx)3) thin-films were prepared by sequential physical vapor deposition of methylammonium lead tri-bromide (MAPbBr3) on methylammonium lead tri-iodide (MAPbI3) bottom layer. The structural, optical, morphological, and electrical properties of the thin-films were studied as the thickness of methylammonium bromide (MABr) was increased from 300 to 500 nm. X-ray diffractograms confirmed transformation of tetragonal MAPbI3(x is 0.0) to the cubic-like structure of MAPbBr3 (x is 1.0) as MAPb(I1–xBrx)3 (x = 0.89–0.95) and PbI2 were formed. The bromine mole ratio x decreased as MABr thickness increased. UV-Vis absorption spectra showed that the bandgap of the thin alloy film decreased from 2.21 to 2.14 eV as x decreased. Scanning electron micrographs depicted densely packed grains that entirely covered the substrate and contained very few pinholes. The average grain size increased from 150 to 320 nm as x decreased. Electrical properties showed high charge carrier mobility that increased linearly with MABr thickness. FTO/MAPb(I1–xBrx)3/Au devices using fluorine-doped tin oxide (FTO) as substrate and gold (Au) as contacts were fabricated and current-voltage characteristics were determined. Space-charge-limited current theory was applied to charge carrier mobility and trap density of MAPb(I1–xBrx)3 thin-films. The charge carrier mobility increased as x decreased. The power conversion efficiency (PCE) of FTO/MAPbBr3/Au, FTO/MAPb(I0.11Br0.89)3/Au and FTO/MAPbI3/Au solar cells were 0.56, 0.62, and 1.15%. Devices including titanium dioxide compact layer (c-TiO2) and titanium dioxide mesoporous (m-TiO2) layer as electron transport layers were also fabricated for the application of Mott-Shottky (M-S) theory. Analyses of dark current-voltage and capacitance-voltage curves of FTO/c-TiO2/m-TiO2/MAPb(I0.11Br0.89)3 solar cells revealed a sizeable built-in voltage (Vbi) of 1.6 V and an accumulation of charge at interfaces for voltages greater than 0.2 V, respectively. Similar analyses for FTO/TiO2/MAPbI3/Au showed a small Vbi of 0.7 V and no charge carrier at interfaces. The work paves a way for reproducible growth of MAPb(I1–xBrx)3 for solar cells and sheds more light on the degree of ion migration in mixed halide and pure halide perovskites.

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Electrical transport properties of an isolated CdS microrope composed of twisted nanowires

Cited by 9 publications

References 50 publications

Synthesis and characterisation of methylammonium lead tri-bromide perovskites thin films by sequential physical vapor deposition

Synthesis and characterisation of methylammonium lead tri-bromide perovskites thin films by sequential physical vapor deposition

Schottky nanocontact of one-dimensional semiconductor nanostructures probed by using conductive atomic force microscopy

Characterization of Thin MAPb(I1–xBrx)3 Alloy Halide Perovskite Films Prepared by Sequential Physical Vapor Deposition

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