Electrical transport properties of poly[2-methoxy-5-(2′-ethyl hexyloxy)-1,4-phenylene vinylene] thin films doped with acridine orange dye

Kazim, Samrana; Ali, Vazid; Zulfequar, M.; Haq, M. Mazharul; Husain, M.

doi:10.1016/j.physb.2007.01.028

Cited by 99 publications

(28 citation statements)

References 30 publications

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“…These findings obtained from figures 3-4 indicate that the studied structure has good photo response characteristics even if having the poor solar cell efficiency. In order to provide detailed information about the photo sensing property of the studied device, the photocurrent as a function of incident light intensity is investigated using the relation [15];…”

Section: Resultsmentioning

confidence: 99%

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Effect of Illumination on the Photovoltaic Parameters of Al/p-Si Diode with an Organic Interlayer Prepared by Spin Coating Method

İmer

Tombak

Korkut

2016

SDÜ Fen Bil Enst Der

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Abstract:In this study, the photovoltaic device application of bromothymol blue (BTB) as an organic interlayer has been reported. After Al back contact fabrication on the surface of the chemically cleaned substrate by thermal evaporation method, the organic interlayer has been grown on p-Si substrate via spin coating technique. Al top contacts have been formed on this organic thin film to finalize the device constructions. The different illumination intensities were exposed to the prepared sample for the enhancement in the photovoltaic properties of device. The fundamental photovoltaic parameters such as open circuit voltage (Voc), short circuit current (Isc) and output power (P) were determined for the device under different illuminations. The photocurrent and the photo voltage have been increased with the increasing in illumination intensity. The dependence of the capacitance on the voltage at high and low frequency has been also reported for the studied device. Consequently, it has been confirmed that the illumination intensity has an important influence on the photovoltaic parameters of the device. Özet: Bu çalışmada, organik ara yüzey olarak brom timol mavisi (BTB) kullanılarak foto voltaik aygıt uygulaması rapor edilmiştir. Kimyasal olarak temizlenen tabanın mat yüzeyine ısıl buharlaştırma yöntemiyle Al arka kontak oluşturulduktan sonra, dönel kaplama yardımıyla organik ara yüzey tabakası Si taban üzerine kaplanmıştır. Aygıt üretimini tamamlamak için, bu organik ince filmin üzerine Al üst kontaklar oluşturulmuştur. Aygıtın foto voltaik özelliklerini iyileştirmek amacıyla hazırlanan örnek farklı şiddetlerdeki aydınlamaya maruz bırakılmıştır. Farklı aydınlanmalar altında aygıtın açık devre voltajı (Voc), kısa devre akımı (Isc) ve çıkış gücü (P) gibi temel güneş pili parametreleri belirlenmiştir. Aydınlanma şiddetinin artması ile fotoakım ve fotogerilim değerleri artmıştır. Ayrıca, yüksek ve düşük frekans değerlerinde aygıt sığasının voltaj bağımlılığı rapor edilmiştir. Aydınlanma şiddetinin üretilen aygıtın fotovoltaik parametreleri üzerinde önemli bir etkisinin olduğu sonucuna varılmıştır. Spin Kaplama Yöntemiyle Hazırlanan Organik Arayüzeyi

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Section: Resultsmentioning

confidence: 99%

“…Organic thin films have been easily prepared on any substrate via different techniques such as the thermal evaporation, the chemical bath deposition, the dip coating and the spin coating [11][12][13][14][15][16][17][18][19]. Spin coating technique was preferred among them, because it is cheaper and simpler growing methods than the others.…”

Section: Introductionmentioning

confidence: 99%

Effect of Illumination on the Photovoltaic Parameters of Al/p-Si Diode with an Organic Interlayer Prepared by Spin Coating Method

İmer

Tombak

Korkut

2016

SDÜ Fen Bil Enst Der

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“…On the other hand, after turning on the illumination, the photocurrent of the diode decreases due to the trapping of the charge carriers in the deep levels and comes back to its initial state. As a result, the fabricated photodiodes exhibits a good photoconducting behavior [34][35][36][37][38]. …”

Section: Fig 8 Plots Of Log(i Ph ) Vs Log(p) Of the Photodiodes Witmentioning

confidence: 94%

“…Semi-logarithmic I-V characteristics of the photodiodes at 100 mW/cm 2 illumination intensity.The variation in the photocurrent with illumination intensity can be analyzed by the following relation[31][32][33],…”

mentioning

confidence: 99%

A novel type heterojunction photodiodes formed junctions of Au/LiZnSnO and LiZnSnO/p-Si in series

Aydın

Tataroğlu

Al-Ghamdi

et al. 2015

Journal of Alloys and Compounds

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“…This gives an evidence for the fact that the diode absorbed the incident light and can generate more separated e-h pair's carriers that contribute to the measured photocurrent. When the intensity of light increases, the photocurrent increases according to the following relation [32]:…”

Section: Current-voltage Characterization Of the Cu 2 O/ P-si Diodementioning

confidence: 99%

Nanocrystalline Cu2O/p-Si solar light-responsive Schottky photodiode

et al. 2015

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Nanocrystalline of Cu 2 O thin film was synthesized by sol-gel spin-coating technique. The spectrophotometric characteristics of transmission and reflection were studied for the film deposited on glass substrate. The optical absorption measurements near the absorption edge indicate that the absorption mechanism is due to allowed direct transition with energy gap value of 2.09 eV. The current-voltage characteristics of Al/Cu 2 O/p-Si/Al diode were studied under dark and various light intensities in the range 20-100 mW/cm 2 . The main diode parameters such as barrier height, ideality factor, series resistance were calculated from the analysis of current-voltage characteristics and studied under various illumination intensities. Moreover, the results indicate that the diode has a high photoresponsivity and the photocurrent increases with increasing light intensity which supports the availability of the diode for photosensor applications. The capacitance and conductance characteristics indicate that the diode highly depends on both voltage and frequency. Higher increase in the capacitance under low frequency as well as the presence of a characteristic peak in the capacitancefrequency characteristics indicates the presence of interface states. Moreover, the stronger parameters of the diode performance such as series resistance and interface states were extracted from the capacitance-voltage-frequency and conductance-voltage-frequency characteristics.

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Electrical transport properties of poly[2-methoxy-5-(2′-ethyl hexyloxy)-1,4-phenylene vinylene] thin films doped with acridine orange dye

Cited by 99 publications

References 30 publications

Effect of Illumination on the Photovoltaic Parameters of Al/p-Si Diode with an Organic Interlayer Prepared by Spin Coating Method

Effect of Illumination on the Photovoltaic Parameters of Al/p-Si Diode with an Organic Interlayer Prepared by Spin Coating Method

A novel type heterojunction photodiodes formed junctions of Au/LiZnSnO and LiZnSnO/p-Si in series

Nanocrystalline Cu2O/p-Si solar light-responsive Schottky photodiode

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