Electrical Tuning of Terahertz Plasmonic Crystal Phases

Sai, P.; Korotyeyev, V. V.; Dub, M.; Słowikowski, M.; Filipiak, M.; But, D. B.; Ivonyak, Yu.; Sakowicz, M.; Lyaschuk, Yu. M.; Kukhtaruk, S. M.; Cywiński, G.; Knap, W.

doi:10.1103/physrevx.13.041003

Cited by 9 publications

(7 citation statements)

References 70 publications

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“…To realize this objective, we dedicated special attention to ensuring the quality of both the Schottky barrier contact (grating-gate coupler) and the ohmic contacts for the source and drain, each of which interfaces with the 2DEG channel. For a more comprehensive description of the fabrication process for the grating-gate PCs, readers are encouraged to refer to our paper [27].…”

Section: Unbiased Algan/gan Grating-gate Pc Structuresmentioning

confidence: 99%

“…This method is based on the numerical solutions of Maxwell's equations, and it operates within the framework of the integral equations method, developed in Refs. [21,27]. Essentially, the IEM relies on the Green function formalism and involves the reduction of Maxwell's system of equations to a set of linear integral equations in the coordinate space.…”

Section: Biased Algan/gan Grating-gate Pc Structures (S2 Sample)mentioning

confidence: 99%

“…The main part of the experimental results has been published in the authors' original prior publication [27] which will be re-reviewed and extended in their interpretations in this article. In particular, the results of the integral equation method were validated independently by the finite element method (FEM).…”

Section: Introductionmentioning

confidence: 99%

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THz properties of grating-gate plasmonic crystals

Sai,

Dub,

Korotyeyev

et al. 2023

physics

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This study reviews recent advances in the modern field of terahertz plasmonics concerning the control of resonant properties of grating-gate plasmonic crystal structures. Particularly, we conducted both experimental and theoretical investigations of AlGaN/GaN grating-gate structures with a focus on investigations of the resonant structure of transmission spectra associated with plasmon excitations in two-dimensional electron gas at different modulation degree of concentration profiles. Two distinct resonant phases of the plasmonic crystal structure were analyzed. The first one, the delocalized phase, is observed in the case of a small modulation degree of electron gas. In this phase, we found that plasmonic resonant absorption of incident radiation occurs across the entire grating-gate structure, with domination in the gated regions of the electron gas. In contrast, the second phase, the localized one, is realized at a strong modulation of the electron concentration profiles when the gated regions of the electron gas are completely depleted. Here, plasmon resonances are characterized by the spatial localization of absorption of incident radiation exclusively within the ungated regions of the electron gas. Moreover, in the localized phase, we observed the unexpected blue shift of plasmon resonant frequency with an increase of gate voltage. This observation was explained by the result of ‘edge gating effect’ and additional shrinking of the concentration profile of the electron gas in the ungated region. We demonstrate that the correct description of both phases requires rigorous electrodynamic simulations and cannot be achieved solely in the frameworks of simplified single-mode or single-cavity models.

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Section: Unbiased Algan/gan Grating-gate Pc Structuresmentioning

confidence: 99%

Section: Biased Algan/gan Grating-gate Pc Structures (S2 Sample)mentioning

confidence: 99%

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THz properties of grating-gate plasmonic crystals

Sai,

Dub,

Korotyeyev

et al. 2023

physics

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“…One of them is proposed by so-called THz plasmonics, which is a field of physics studying collective oscillations of electrons (plasmons) in semiconductor devices. [8][9][10][11][12] Usually, two-dimensional (2D) plasmons are of special interest because they can be excited in field effect transistor's (FET) channels and tuned by the gate voltage.…”

Section: Introductionmentioning

confidence: 99%

“…Such grating-gate structures have dimensions higher than THz frequency wavelengths and provide effective coupling of THz radiation, making them suitable for transmission, reflection, and emission experiments. 11,18,19…”

Section: Introductionmentioning

confidence: 99%

Control of the unscreened modes in AlGaN/GaN terahertz plasmonic crystals

Dub,

Sai,

Ivonyak

et al. 2024

Journal of Applied Physics

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Unscreened (ungated) plasmons in large-area grating-gate AlGaN/GaN heterostructures were studied experimentally by Fourier-transform spectroscopy. Special attention was paid to the recently discovered THz plasmonic crystal modes observed at totally depleted gated regions when plasma oscillations were localized only in ungated parts of the grating-gate structures. The frequency of these modes is still gate voltage-dependent in the limited range due to the depletion of the ungated parts located close to the gate edges. Double gate structures with an additional bottom gate were fabricated and studied to improve the gate voltage tunability of the unscreened plasmons. Since this gate is located deep below the channel, the plasmons behaved as ungated ones, but their frequency still could be tuned by this bottom gate. We show that the combined effect of the top and bottom gates allows the efficient tuning of terahertz frequencies of unscreened modes in the grating-gate AlGaN/GaN plasmonic crystals.

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Negative damping of terahertz plasmons in counter-streaming double-layer two-dimensional electron gases

Yang,

Guo,

Zhang

et al. 2024

J. Phys. D: Appl. Phys.

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The plasmon excitation in two-dimensional electron gases is a significant way of achieving micro-nanoscale terahertz (THz) devices. Here, we establish a kinetic simulation model to study the THz plasmons amplification in a semiconductor double-quantum-well system with counter-streaming electron drift velocities. By comparing the simulation results with theoretical dispersion relations, we confirm two competing mechanisms of negative damping suitable for THz amplification: Cherenkov-type two-stream instability and a new non-Cherenkov mechanism called kinetic relaxation instability. The former is caused by the interlayer coupling of two slow plasmon modes and only exists when the drift velocities are much greater than the fermi velocities. The latter is a statistical effect caused by the momentum relaxation of electron-impurity scattering and predominates at lower drift velocities. We show that an approximate kinetic dispersion relation can accurately predict the wave growth rates of the two mechanisms. The results also indicate that the saturated plasmonic waves undergo strong nonlinearities such as wave distortion, frequency downshift, wave-packet formation, and spectrum broadening. The nonlinear evolution can be interpreted as the merging of bubble structures in the electron phase-space distribution. The present results not only reveal the potential mechanisms of the plasmonic instabilities in double-layer 2DEGs, but also provide a new guideline for the design of on-chip THz amplifiers.

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Electrical Tuning of Terahertz Plasmonic Crystal Phases

Cited by 9 publications

References 70 publications

THz properties of grating-gate plasmonic crystals

THz properties of grating-gate plasmonic crystals

Control of the unscreened modes in AlGaN/GaN terahertz plasmonic crystals

Negative damping of terahertz plasmons in counter-streaming double-layer two-dimensional electron gases

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