Electrically active centers introduced in p‐type Si by rapid thermal processing

Abstract

On the investigation of the mechanism of phosphorus gettering of metal impurities, vacancies have been generated through proton-irradiation.The resulting irradiation-induced defects were examined for reactions with Fe after heat treatments. Based on the evolution of defect concentrations by isochronal annealings, it is found that Fe interacts with the divacancy and the vacancy-oxygen complexes, forming deep levels of 0.28 eV and 0.34 eV above the valence band edge (E V ), respectively.In the search for substitutional Fe to investigate its electrical activity and thermal stability, measurements were performed around the pro-