2016
DOI: 10.1016/j.jcrysgro.2016.03.027
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Electrically conducting n-type AlGaN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition

Abstract: We report an electrically conducting 40-pair silicon doped Al 0.12 Ga 0.88 N/GaN distributed Bragg reflector (DBR) grown by metalorganic chemical vapor deposition on a silicon doped n-type GaN template. Due to the relatively small lattice mismatch between AlGaN and GaN, strain managing layers are not required for crack-free n-DBR growth. The DBR demonstrates a peak reflectivity of 91.6% at 368 nm with stopband of 11 nm. In addition, the 40-pair n-DBR shows the vertical resistance of 5.5 Ω, which corresponds to… Show more

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Cited by 15 publications
(9 citation statements)
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“…The lowest specific series resistances reported for III-nitride DBRs are 2 × 10 −4 •cm 2 for a 40 pair Al 0.12 Ga 0.88 N/GaN DBR having a 92 % peak reflectivity and 11 nm stopband width [13], and 7.8 × 10 −4 •cm 2 for a 40 pair DBR using lattice-matched Al 0.82 In 0.18 N/GaN and having a peak reflectivity of 99.9 % and a 22 nm stopband width [11], [14]. The narrow stopband widths are a result of the large number of pairs needed to achieve high reflectivity, due to the relatively small refractive index contrasts for the AlInN/GaN and the low Al-composition AlGaN/GaN material pairs.…”
Section: Introductionmentioning
confidence: 97%
“…The lowest specific series resistances reported for III-nitride DBRs are 2 × 10 −4 •cm 2 for a 40 pair Al 0.12 Ga 0.88 N/GaN DBR having a 92 % peak reflectivity and 11 nm stopband width [13], and 7.8 × 10 −4 •cm 2 for a 40 pair DBR using lattice-matched Al 0.82 In 0.18 N/GaN and having a peak reflectivity of 99.9 % and a 22 nm stopband width [11], [14]. The narrow stopband widths are a result of the large number of pairs needed to achieve high reflectivity, due to the relatively small refractive index contrasts for the AlInN/GaN and the low Al-composition AlGaN/GaN material pairs.…”
Section: Introductionmentioning
confidence: 97%
“…There have so far been no reports that demonstrate a resonant-cavity LED (RCLED) operating in the red regime or a RE-semiconductor based RCLED. This is a result of the complexity of achieving a RE-doped GaN LED with a low operation voltage caused by its crystal quality, as well as a conductive DBR, due to the large lattice mismatch and band offset between GaN and AlInGaN-based materials. …”
Section: Introductionmentioning
confidence: 99%
“…There are a few reports on electrically conductive Al(Ga)N/GaN DBRs, but their specific series resistances, extracted from IV-characteristics, is in the order of 0.1 Ω cm 2 or above. [18][19][20] The only exception is the recent demonstration of an Al 0.12 Ga 0.88 N/GaN DBR by Liu et al, 21 where the DBR had a specific series resistance of 2 × 10 −4 Ω cm 2 . However, due to the low Alcomposition the stopband width was as narrow as 11 nm and 40 mirror pairs only resulted in a peak reflectivity of 92% at 368 nm.…”
Section: Introductionmentioning
confidence: 99%