Electrically Conductive Silicon Carbide without Oxide Sintering Additives

Frajkorová, Františka; Lenčéš, Zoltán; Šajgalı́k, Pavol

doi:10.4191/kcers.2012.49.4.342

Cited by 8 publications

(13 citation statements)

References 16 publications

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“…Silicon carbide (SiC) has been recognized as an important material with a wide range of industrial applications. SiC ceramics with good thermal conductivity, mechanical strength, and oxidation resistance have been applied to fusion reactors, gas turbines, filters, optical mirrors, and structural parts . SiC‐based materials can also be processed into various semiconductor devices that are more reliable than the existing Si‐based devices at extreme operating conditions such as high temperature, high power, and high frequency .…”

Section: Introductionmentioning

confidence: 99%

Temperature Dependence of Electrical Resistivity (4–300 K) in Aluminum‐ and Boron‐Doped SiC Ceramics

et al. 2013

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Al-and B-doped 3C-SiC ceramics were prepared by hot-pressing powder compacts containing submicrometer-sized b-SiC, precursors of 5 wt% nanosized b-SiC, and an optional additive (Al or B) in an Ar atmosphere. Electron probe microanalysis (EPMA) investigation on the obtained specimens revealed that a portion of the doped Al and B atoms substituted the zinc blende lattice sites. The temperature-dependent electrical resistivity data of the Al-and B-doped SiC specimens were measured in the 4-300 K range and compared with those of an undoped specimen. The Al-and B-doped SiC specimens exhibited resistivities that were as high as~10 3 Ω cm at room temperature and~10 5 and~10 4 Ω cm, respectively, below 100 K. These values are larger than those of the undoped SiC specimen by a factor of~10 4 . Such high resistivities of the impurity-doped specimens are attributable to the carrier compensation by the Al-and B-derived acceptors located well above the valence-band edge of 3C-SiC. Photoluminescence investigation revealed that the Al-and B-doped specimens exhibited emission profile below 2 eV, implying the existence of the acceptors.For undoped, Al-doped, and B-doped SiC, submicrometersized b-SiC (Ultrafine, Betarundum; Ibiden Co. Ltd, Ogaki, Japan), polysiloxane (1036 kg/m 3 ; GE Toshiba Silicones Co. Ltd., Tokyo, Japan), phenol resin (1090 kg/m 3 ; Kangnam Chemical Co. Ltd., Incheon, Korea), and an optional additive, Al (3 lm, >99.9%; High Purity Chemicals Ltd., Tokyo, Japan) or B (<1.0 lm, 95%-97%; TangShan WeiHao R. Riedel-contributing editor

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Section: Introductionmentioning

confidence: 99%

Temperature Dependence of Electrical Resistivity (4–300 K) in Aluminum‐ and Boron‐Doped SiC Ceramics

et al. 2013

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“…As a IV–IV binary semiconductor, silicon carbide (SiC) has received considerable attention due to its excellent thermal conductivity, mechanical strength, superior corrosion, and oxidation resistance . Such properties have led to the implementation of SiC in gas turbine components, fusion reactors, heat exchangers, hot‐gas filters, and optical mirrors.…”

Section: Introductionmentioning

confidence: 99%

Control of Electrical Resistivity in Silicon Carbide Ceramics Sintered with Aluminum Nitride and Yttria

2013

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The electrical properties of b-SiC ceramics were found to be adjustable through appropriate AlN-Y 2 O 3 codoping. Polycrystalline b-SiC specimens were obtained by hot pressing silicon carbide (SiC) powder mixtures containing AlN and Y 2 O 3 as sintering additives in a nitrogen atmosphere. The electrical resistivity of the SiC specimens, which exhibited n-type character, increased with AlN doping and decreased with Y 2 O 3 doping. The increase in resistivity is attributed to Al-derived acceptors trapping carriers excited from the N-derived donors. The results suggest that the electrical resistivity of the b-SiC ceramics may be varied in the 10 4 -10 À3 ΩÁcm range by manipulating the compensation of the two impurity states. The photoluminescence (PL) spectrum of the specimens was found to evolve with the addition of dopants. The presence of N-donor and Al-acceptor states within the band gap of 3C-SiC could be identified by analyzing the PL data.

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“…The decrease in the electrical resistivity of β-SiC after the addition of NbC can be attributed to the formation of a conductive phase (NbC-Ti-C-O-Si) on the interface of the SiC particles. Frajkorova et al 54 and Fides et al 71 studied the effect of the combination of NbC and Ti on the electrical resistivity of SiC. They found that Ar was more effective than vacuum in reducing the electrical resistivity of SiC for almost the same NbC (∼19 wt.%) and Ti (∼10 wt.%) contents and porosity (∼10%).…”

Section: Nitride/carbide Additivesmentioning

confidence: 99%

“…65,68 Second-phase additives (oxides, elements, nitrides/carbides, etc.) affect the electrical resistivity of porous SiC either though percolation 28,69 (as shown in Figure 1B) or the modification of the interface boundary phase 54 (as shown in Figure 1C). The nature (insulating (Figure 1(c)-( 1)) or conductive (Figure 1(c)-( 2))) and thickness of this layer define the electrical resistivity of the sintered sample.…”

Section: Factors Affecting Electrical Resistivity Of Porous Sic Ceramicsmentioning

confidence: 99%

“…), which assist its densification at relatively low temperatures (approximately 1900 • C). [53][54][55][56] The electrical properties of SiC-based ceramics depend on their chemical composition and the processing conditions that control the microstructure of the sintered samples. 30,57 Chemical vapour deposited (CVD) SiC is strongly recommended for applications, such as plasma etching and ion implantation because of its high purity, which contributes to its high temperature stability.…”

Section: Introductionmentioning

confidence: 99%

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Controlling the electrical resistivity of porous silicon carbide ceramics and their applications: A review

Anwar

Bukhari

et al. 2022

Int J Applied Ceramic Tech

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Porous silicon carbide (SiC)‐based ceramics are widely used in numerous applications of technical importance owing to their exceptional structural (e.g., excellent chemical, mechanical, and thermal stability) and functional (e.g., controlled electrical resistivity) properties. Porous SiC with controlled electrical resistivity is required for various advanced applications, for example, power electronic devices, semiconductor processing parts, fusion reactors, thermoelectric energy conversion, electromagnetic shielding, and environmental applications such as heatable filters. The electrical properties of sintered porous SiC are significantly affected by its chemical composition, processing conditions, and microstructure. This article reviews the influence of certain critical factors, such as the polytype, doping conditions, porosity (%), additive composition (oxide additives, element additives, metal nitride/carbide additives, etc.), and processing conditions on the electrical resistivity of porous SiC. Novel applications of porous SiC with controlled electrical resistivity are also discussed in this review.

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Electrically Conductive Silicon Carbide without Oxide Sintering Additives

Cited by 8 publications

References 16 publications

Temperature Dependence of Electrical Resistivity (4–300 K) in Aluminum‐ and Boron‐Doped SiC Ceramics

Temperature Dependence of Electrical Resistivity (4–300 K) in Aluminum‐ and Boron‐Doped SiC Ceramics

Control of Electrical Resistivity in Silicon Carbide Ceramics Sintered with Aluminum Nitride and Yttria

Controlling the electrical resistivity of porous silicon carbide ceramics and their applications: A review

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