2019
DOI: 10.3938/jkps.75.398
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Electrically Controlled Magnetoresistance in Ion-Gated Platinum Thin Films

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(3 citation statements)
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“…The inversion temperature is of about 120 K, which is the same as the one at which the longitudinal resistivity ρ xx goes to zero (Figure b). A sign inversion of the transverse resistivity has already been observed for Pt/YIG systems and assigned to AHE induced by MPE in Pt. ,, Similar temperature variations of the AHE were also observed in the absence of any FM layer in ion-gated platinum thin films and analogously attributed to some induced FM ordering on the Pt surface. , The explanation given by Zhou et al for such a sign inversion is that for paramagnetic Pt, both the density of states (DOS) and curvature near the Fermi surface importantly change with temperature. They indeed observed, for Pt/YIG heterostructures, a sign inversion of the ordinary Hall coefficient R 0 of Pt with temperature, indicating a change of the carrier type.…”
Section: Magnetotransport Studyresults and Discussionmentioning
confidence: 59%
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“…The inversion temperature is of about 120 K, which is the same as the one at which the longitudinal resistivity ρ xx goes to zero (Figure b). A sign inversion of the transverse resistivity has already been observed for Pt/YIG systems and assigned to AHE induced by MPE in Pt. ,, Similar temperature variations of the AHE were also observed in the absence of any FM layer in ion-gated platinum thin films and analogously attributed to some induced FM ordering on the Pt surface. , The explanation given by Zhou et al for such a sign inversion is that for paramagnetic Pt, both the density of states (DOS) and curvature near the Fermi surface importantly change with temperature. They indeed observed, for Pt/YIG heterostructures, a sign inversion of the ordinary Hall coefficient R 0 of Pt with temperature, indicating a change of the carrier type.…”
Section: Magnetotransport Studyresults and Discussionmentioning
confidence: 59%
“…15,19,53 Similar temperature variations of the AHE were also observed in the absence of any FM layer in ion-gated platinum thin films and analogously attributed to some induced FM ordering on the Pt surface. 16,54 The explanation given by Zhou et al 53 for such a sign inversion is that for paramagnetic Pt, both the density of states (DOS) and curvature near the Fermi surface importantly change with temperature. They indeed observed, for Pt/YIG heterostructures, a sign inversion of the ordinary Hall coefficient R 0 of Pt with temperature, indicating a change of the carrier type.…”
Section: Magnetotransport Studyresults and Discussionmentioning
confidence: 99%
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