Electrically controlled spin polarized current in Dirac semimetals

Lv, Qianqian; Fu, Pei-Hao; Yu, Xiang-Long; Liu, Junfeng; Wu, Jiansheng

doi:10.1038/s41598-021-01067-y

Cited by 3 publications

(1 citation statement)

References 43 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The aspects of Quantum Hall effect and Anomalous Quantum Hall effect in certain materials are also potential applications in terms of Quantum memory and information processing. The Chiral anomaly effect, gravitational anomaly effect, significant intrinsic anomalous Hall and spin Hall effects, and showing a substantial magnetoresistance are only a few of the unusual transport features that topological materials host in bulk [5]. The interesting aspects of topological materials intrigues us in the following direction.…”

Section: Introductionmentioning

confidence: 99%

CaPdBi: A Nontrivial Topological Candidate

Sahoo

Behatha

Desai

et al. 2023

J. Phys.: Conf. Ser.

View full text Add to dashboard Cite

In the framework of density functional theory, a comprehensive investigation of the mechanical, dynamical, and electronic properties of the compounds CaPdX (X= Sb and Bi) is performed. The investigated systems are both mechanically and dynamically stable. These compounds are claimed to be metallic by the electronic structure properties, with intriguing crossing points in the close proximity of the Fermi level. With spin orbit coupling (SOC) included, a gap appears at particular crossing points. The predicted electronic band structure shows that the d-states of Ca and Pd and the p-states of Bi and Sb dominate at the crossing sites. Inversion and time-reversal symmetry, together with the inclusion of SOC, demonstrate that CaPdBi is a Dirac metal. The calculated Z2 invariants for CaPdSb and CaPdBi are 0 and 1, which infer the trivial and non-trivial strong topological nature, respectively. As a whole, the investigated compound has future scope for its fascinating topological features, one amongst which is the presence of low-energy excitons (Dirac points).

show abstract

Section: Introductionmentioning

confidence: 99%

CaPdBi: A Nontrivial Topological Candidate

Sahoo

Behatha

Desai

et al. 2023

J. Phys.: Conf. Ser.

View full text Add to dashboard Cite

show abstract

Electron–photon–phonon interactions in Dirac semimetals: Magneto-optical absorption and mobility analysis

Hieu,

Nguyen,

Kubakaddi

et al. 2024

Journal of Applied Physics

View full text Add to dashboard Cite

We study the magneto-optical properties of Dirac semimetal (DSM) slabs with particular emphasis on Cd3As2 through electron–photon–phonon interactions, focusing on the magneto-optical absorption coefficient (MOAC) and full-width at half maximum (FWHM). Studying the Landau level (LL) energy of DSMs in the (xy) plane and the z-direction revealed a unique deviation from the square root dependence on the magnetic field, distinguishing DSMs from other semiconductors. At high magnetic fields, the electron–hole symmetry in the LL spectrum is broken, indicating a topological phase in DSMs. For undoped DSMs, MOAC is driven by interband transitions, with peaks from one-photon absorption being smaller and positioned to the left of two-photon ones. Increasing the magnetic field increases peak values. FWHM for one- and two-photon processes increases with the magnetic field and follows a T dependence on temperature. In doped DSMs, both intraband and interband transitions occur, with new interband peaks emerging at higher temperatures near the Fermi energy. Increased electron density shifts the peak position slightly toward higher energy. Peaks from optical phonon emission are consistently higher and located to the right of those from optical phonon absorption, indicating a stronger emission process. The FWHM data allow for the estimation of electron mobilities, and using a reasonable broadening parameter, our predicted mobility values agree with experimental results.

show abstract

Anisotropic weak antilocalization in thin films of the Weyl semimetal TaAs

Leahy,

Rice,

Jiang

et al. 2024

Phys. Rev. B

View full text Add to dashboard Cite

Device applications of topological semimetals await the development of epitaxial films in the ultrathin limit. Weak antilocalization (WAL) has been extensively utilized in the understanding of surface states in topological insulators and shows promise for use in elucidating the properties of thin film topological semimetals. Here, we report insights from WAL in the surface state and interface transport properties of our recently synthesized single-crystal-like thin films of the Weyl semimetal TaAs(001) grown on GaAs(001). We observe robust, anisotropic WAL in the magnetoconductance from 2 to 20 K in films from 10 to 200 nm thick. We link the anisotropic WAL magnetoconductance to anisotropic mobility stemming from film topography. We conclude that WAL in the films likely originates from the antilocalization of topological surface states. The WAL magnetoconductance is impacted by the film thickness and topography, solidifying the useful role of WAL in the study of topological semimetal/semiconductor heterointerfaces. Published by the American Physical Society 2024

show abstract

Electrically controlled spin polarized current in Dirac semimetals

Cited by 3 publications

References 43 publications

CaPdBi: A Nontrivial Topological Candidate

CaPdBi: A Nontrivial Topological Candidate

Electron–photon–phonon interactions in Dirac semimetals: Magneto-optical absorption and mobility analysis

Anisotropic weak antilocalization in thin films of the Weyl semimetal TaAs

Contact Info

Product

Resources

About