Electrically detected magnetic resonance in a W-band microwave cavity

Lang, Volker; Lo, C. C.; George, Richard E.; Lyon, S. A.; Bokor, J.; Schenkel, T.; Ardavan, Arzhang; Morton, John J. L.

doi:10.1063/1.3557395

Cited by 9 publications

(8 citation statements)

References 20 publications

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“…Electrical detection of magnetic resonance (EDMR) shows increased sensitivity compared to standard Electron Spin Resonance (ESR), which requires about 10 9 spins per resonance line. In our EDMR studies in X-and W-band cavities [32,33,52], micron scale transistors where formed in 28 Si epi layers. Donor were implanted into transistor channels.…”

Section: Coherence Of Donor Spins In 28-siliconmentioning

confidence: 99%

A Spin Quantum Bit Architecture with Coupled Donors and Quantum Dots in Silicon

Schenkel

Lo²,

Weis³

et al. 2013

Single-Atom Nanoelectronics

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Spins of donor electrons and nuclei in silicon are promising quantum bit (qubit) candidates which combine long coherence times with the fabrication finesse of the silicon nanotechnology industry. We outline a potentially scalable spin qubit architecture where donor nuclear and electron spins are coupled to spins of electrons in quantum dots and discuss requirements for donor placement aligned to quantum dots by single ion implantation. INTRODUCTIONElectron and nuclear spins of donors in silicon have long been recognized as promising qubit candidates [1]. In isotopically purified 28 Si they exhibit long coherence times [2, 3] and their integration can benefit from the great fabrication finesse of silicon nanotechnology. Several prominent proposals for scalable quantum computer architectures with donor spin qubits have emerged [1,[4][5][6][7]. In the original Kane proposal, quantum information is stored in the nuclear spin of phosphorus atoms. Electrostatic gates facilitate transfer of quantum information form nuclear to electron spins and between electron spins, by modulation of the contact hyperfine interaction (A-gates), and the exchange coupling (J-gates), respectively. Recently, reliable detection of single electron spins [8] and the control of single electron and nuclear spins [9] states was reported for donors in silicon. Similar advances have also been reported for NVcenters in diamond [10,11] where there are many materials and integration challenges complementary to those for donors in silicon [12,13].Following Di Vincenzo's widely used criteria for the development of a large scale quantum computer [14], elements of quantum memory, quantum logic and efficient quantum communication channels have to be integrated. While single donor electron and nuclear spin readout and control have been demonstrated, the next difficult challenges are to master spin qubit coupling so that two and multi-qubit logic operations can be implemented. In early donor qubit proposals, coupling was envisioned along 1D chains of nearest neighbor coupled qubits. This ought to suffice for quantum logic demonstrations with several qubits even with limited coupling control [15] but severe limitations of nearest neighbor coupling have been pointed out [4,16]. Coherent shuttling of electrons between donors has been proposed as a path to circumvent nearest neighbor coupling challenges or to supplement nearest neighbor coupling with a longer range coupling option [4,17]. For electron shuttling, critical questions regard spin coherence of donor electron and nuclear spins during cycles of ionization and recombination. Other potential paths for long range transport of quantum information from donor spins include concepts of a spin bus [18], virtual phonon mediated coupling [19], coupling via nano-mechanical resonators [20] and spin to photon coupling in optical cavities [21] or via high Q microwave resonators [10,22, 23].In parallel to single donor spin control, control of electron spins in silicon and SiGe based quantum dots has also matured rap...

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Section: Coherence Of Donor Spins In 28-siliconmentioning

confidence: 99%

A Spin Quantum Bit Architecture with Coupled Donors and Quantum Dots in Silicon

Schenkel

Lo²,

Weis³

et al. 2013

Single-Atom Nanoelectronics

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“…We have further measured similar devices in a W-band (%100 GHz) cylindrical microwave cavity and have found that the same capacitative shunt design works equally well at the higher microwave frequency. 2 While we demonstrated the suppression of microwave rectification effects with MOSFETs, the use of the shunt capacitor is generally applicable to other transport experiments where microwave irradiation is required. One example is spin-dependent recombination experiments, 1,6-8,25-28 where having a metallic shunt layer covering the device would obstruct the above-band-gap illumination needed for photocarrier generation in this experiment.…”

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confidence: 97%

Suppression of microwave rectification effects in electrically detected magnetic resonance measurements

Bradbury

Tyryshkin

et al. 2012

Applied Physics Letters

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Spin-dependent transport properties of micro- and nano-scale electronic devices are commonly studied by electrically detected magnetic resonance (EDMR). However, the applied microwave fields in EDMR experiments can induce large rectification effects and result in perturbations of the device bias conditions and excessive noise in the EDMR spectra. Here we examine rectification effects of silicon metal-oxide-semiconductor field-effect transistors exposed to X-band microwave irradiation and show that the rectification effects can be effectively suppressed by incorporating a global capacitive shunt covering the device. We demonstrate that the signal-to-noise ratio in the EDMR spectra improves by over a factor of ten in the shunted devices.

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“…With the help of the Easyspin toolbox for Matlab [188] the authors were able to simulate the time evolution of the triplet signal. For further characterization of solar cells, new methods such as electrically detected magnetic resonance (EDMR) are under development [189]. EDMR is an ideal technique for any conductive material as magnetic resonance is detected by conductivity changes [190].…”

mentioning

confidence: 99%

Combining Molecular Spintronics with Electron Paramagnetic Resonance: The Path Towards Single-Molecule Pulsed Spin Spectroscopy

Slota¹,

Bogani²

2020

Appl Magn Reson

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We provide a perspective on how single-molecule magnets can offer a platform to combine quantum transport and paramagnetic spectroscopy, so as to deliver time-resolved electron paramagnetic resonance at the single-molecule level. To this aim, we first review the main principles and recent developments of molecular spintronics, together with the possibilities and limitations offered by current approaches, where interactions between leads and single-molecule magnets are important. We then review progress on the electron quantum coherence on devices based on molecular magnets, and the pulse sequences and techniques necessary for their characterization, which might find implementation at the single-molecule level. Finally, we highlight how some of the concepts can also be implemented by including all elements into a single molecule and we propose an analogy between donor–acceptor triads, where a spin center is sandwiched between a donor and an acceptor, and quantum transport systems. We eventually discuss the possibility of probing spin coherence during or immediately after the passage of an electron transfer, based on examples of transient electron paramagnetic resonance spectroscopy on molecular materials.

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Electrically detected magnetic resonance in a W-band microwave cavity

Cited by 9 publications

References 20 publications

A Spin Quantum Bit Architecture with Coupled Donors and Quantum Dots in Silicon

A Spin Quantum Bit Architecture with Coupled Donors and Quantum Dots in Silicon

Suppression of microwave rectification effects in electrically detected magnetic resonance measurements

Combining Molecular Spintronics with Electron Paramagnetic Resonance: The Path Towards Single-Molecule Pulsed Spin Spectroscopy

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