2015
DOI: 10.1021/nn5056332
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Electrically Driven Magnetic Domain Wall Rotation in Multiferroic Heterostructures to Manipulate Suspended On-Chip Magnetic Particles

Abstract: In this work, we experimentally demonstrate deterministic electrically driven, strain-mediated domain wall (DW) rotation in ferromagnetic Ni rings fabricated on piezoelectric [Pb(Mg1/3Nb2/3)O3]0.66-[PbTiO3]0.34 (PMN-PT) substrates. While simultaneously imaging the Ni rings with X-ray magnetic circular dichroism photoemission electron microscopy, an electric field is applied across the PMN-PT substrate that induces strain in the ring structures, driving DW rotation around the ring toward the dominant PMN-PT str… Show more

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Cited by 84 publications
(90 citation statements)
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“…145 the motion of magnetic domain-walls with an electric field rather than a current. Electric-field-driven magnetic domain-wall motion has been demonstrated experimentally in a number of magnetoelectric heterostructures, [149][150][151][152] and computationally in a peculiar heterostructure consisting of a magnetic nanowire sandwiched by a Si bottom substrate and a Pb(Zr,Ti)O 3 (PZT) top film. 153 However, none of these reports have demonstrated an average magnetic domain-wall velocity exceeding 100 m/s, a speed comparable to that of current-driven magnetic domain-wall motion.…”
Section: Searching For New Magnetoelectric Coupling In Superlatticesmentioning
confidence: 99%
“…145 the motion of magnetic domain-walls with an electric field rather than a current. Electric-field-driven magnetic domain-wall motion has been demonstrated experimentally in a number of magnetoelectric heterostructures, [149][150][151][152] and computationally in a peculiar heterostructure consisting of a magnetic nanowire sandwiched by a Si bottom substrate and a Pb(Zr,Ti)O 3 (PZT) top film. 153 However, none of these reports have demonstrated an average magnetic domain-wall velocity exceeding 100 m/s, a speed comparable to that of current-driven magnetic domain-wall motion.…”
Section: Searching For New Magnetoelectric Coupling In Superlatticesmentioning
confidence: 99%
“…5 15 For one of the specimens, adhesion promotor AP3000 and dielectric benzocyclobutene (BCB) monomer of 10 µm thick were spun onto the top electrode, followed by thermal curing in N 2 chamber at 250 o C. After poling the PMN-PT substrate, 5 nm Ti/15 nm Ni films were deposited by e-beam evaporation. The purpose of poling prior to the deposition of FM layer is to reorient spontaneous polarizations, thereby reducing the ferroelastic energy 16 and prepare the substrate to work in its linear piezoelectric regime.…”
Section: A Sample Preparationmentioning
confidence: 99%
“…In the specimen with interposed polymer, the electric-field-induced strain in the PMN-PT was first transferred to the polymer and then to the top FM Ni thin film, as opposed to the direct strain transfer usually found in a PMN-PT/Ni composite system. 5,15 To understand the difference in ME response between these two systems, in-plane magneto-optical Kerr (MOKE) magnetometry with in-situ electric fields was employed to study M-H hysteresis loop variation for both samples. The two MOKE specimens were oriented in three directions during the experiment such that the external magnetic field was applied in the direction at an angle θ of 0 o , 90 o and 45 o with respect to the [100] direction of PMN-PT (see Fig.…”
Section: -5mentioning
confidence: 99%
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“…Notwithstanding this, applications and device concepts for in-plane magnetized nanowires continue to develop for logic and sensing, 10,19,20 and a wide range of concepts for biotechnology and medicine applications, including magnetic tagging, detection of proteins and cells, as well as sorting and drug delivery. [21][22][23] These applications are driven to understanding and control DW behavior in nanowires with in-plane magnetization. For robust functional performance, DW behaviour needs to be highly repeatable in terms of both propagation and pinning; thus, variability in pinning behaviour or sensitivity of the propagation velocity to magnetic field will affect device reliability.…”
mentioning
confidence: 99%