Electrically driven single InGaN/GaN quantum dot emission

Jarjour, Anas F.; Taylor, Robert A.; Oliver, Rachel A.; Kappers, Menno J.; Humphreys, C. J.; Tahraoui, A.

doi:10.1063/1.3044395

Cited by 14 publications

(10 citation statements)

References 19 publications

(15 reference statements)

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“…Cooling of the sample down to 4 K results in a raise of the onset voltage up to 8.8 V [61]. While the room temperature value is in good agreement with those reported for wide-bandgap QD LEDs in literature [21,62], the low temperature turn-on bias is relatively high. Especially the difference between the two values is larger than reported, giving a hint that besides the carrier freeze-out other effects may have occurred.…”

Section: Electroluminescence Of Single Qdssupporting

confidence: 87%

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Optical properties of single InGaN quantum dots and their devices

Sebald

Kalden

Lohmeyer

et al. 2011

Physica Status Solidi (b)

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Nitride-based quantum dots have many attractive optical properties for the realization of quantum dot (QD) based devices which will be presented in this contribution. We will analyze the basic characteristics of single InGaN QDs and their electroluminescence (EL) as well as the optical properties of QD stacks and their gain spectra. The single QDs are characterized by the high temperature stability of their emission up to 150 K in PL and EL and even up to room temperature for stacked QD samples. Furthermore, the polarization of individual QD emission lines was analyzed giving an insight into their geometrical shape. Time-resolved microphotoluminescence (m-PL) measurements on the excitonic and biexcitonic transition of a single QD as well as on the influence of piezoelectric fields on them and on their binding energy were performed. Further, we present an analysis of electrically driven luminescence from single InGaN QDs embedded into a light emitting diode structure showing single sharp emission lines in the green spectral region with a high temperature stability up to 150 K. Furthermore, for the possible integration within optical devices in the future the threshold power density as well as the modal gain were investigated for samples with stacked InGaN QD layers. They show a modal gain per QD being comparable to that of II-VI and III-As compounds. These results give a good insight into the basic optical properties of InGaN QD based devices and showing their high potential for electrically driven single photon emitters as well as for bright, low-threshold InGaN QD based light emitting devices in the near future.

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Section: Electroluminescence Of Single Qdssupporting

confidence: 87%

“…Nevertheless, all these results were realized under optical excitation, while only very few and recent results exist concerning the electroluminescence (EL) of QDs in the visible spectral region [21][22][23]. However, these measurements were limited to temperatures up to 85 K observed on single emission lines superimposed to a QD ensemble.…”

mentioning

confidence: 99%

Optical properties of single InGaN quantum dots and their devices

Sebald

Kalden

Lohmeyer

et al. 2011

Physica Status Solidi (b)

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“…Within natural sciences, sub-surface imaging is crucial to the study of a large variety of "natural" nanostructures (from sub-cellular elements in living organisms to mixed phases and defects in a variety of materials) as well as of artificial, man-made systems, that can be generated via either lithographic methods [1] or via entropy-driven phase-separation processes, [2] including the growth of quantum dots [3] for single-photon sources, or in the study of defects in electronic devices. Within natural sciences, sub-surface imaging is crucial to the study of a large variety of "natural" nanostructures (from sub-cellular elements in living organisms to mixed phases and defects in a variety of materials) as well as of artificial, man-made systems, that can be generated via either lithographic methods [1] or via entropy-driven phase-separation processes, [2] including the growth of quantum dots [3] for single-photon sources, or in the study of defects in electronic devices.…”

Section: Introductionmentioning

confidence: 99%

Mapping Sub‐Surface Structure of Thin Films in Three Dimensions with an Optical Near‐Field

Fenwick

Mauthoor

Cacialli

2019

Advcd Theory and Sims

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Subsurface mapping is crucial to understanding many biological systems as well as structured thin films for (opto)electronic or photonic applications. A non-invasive method is presented to map subsurface nanostructures from scanning near-field optical microscopy images. The Bethe-Bouwkamp model is used to simulate imaging of buried nano-objects or subsurface slanted planar interfaces, and it is shown how to determine their depth and size, or the interface inclination, from just one image. It is shown that the steep optical field gradient makes near-field microscopy a particularly sensitive depth probe for thin films.

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“…Further, first experiments on InGaN QDs incorporated into optical microresonators 6, 7 and QD laser structures 8–10 were reported. However, all these results were realized under optical excitation, while only very few and recent results exist concerning the electroluminescence (EL) of InGaN QDs in the visible spectral region 11, 12, being limited to temperatures not beyond 85 K and observed on single emission lines superimposed to the QD ensemble. In this article, we present light emitting diode (LED) structures with InGaN QDs as active material with a high emission intensity even at room temperature.…”

Section: Introductionmentioning

confidence: 99%

Electroluminescence from isolated single indium gallium nitride quantum dots up to 150 K

Kalden

Tessarek

Sebald

et al. 2010

Physica Status Solidi (a)

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We present light emitting diode structures with InGaN quantum dots (QDs) as active material grown by metal-organic vaporphase epitaxy. The devices reveal a threshold voltage of 3.15 V at room temperature, or 8.8 V at 4 K, respectively. At room temperature, the electroluminescence intensity is still as high as 28% of the intensity at 4 K, the emission covering the spectral region from 2.3 to 2.7 eV at 4 K (2.2-2.6 eV at 300 K). Electrically driven luminescence from spectrally isolated single InGaN QDs emitting in the green spectral region is demonstrated with a thermal stability of up to 150 K. These results are an important step towards applications like electrically driven single photon emitters at elevated temperatures, which are desirable as a basis for communication techniques incorporating plastic optical fibers as well as for modern concepts of free space quantum cryptography.

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Electrically driven single InGaN/GaN quantum dot emission

Cited by 14 publications

References 19 publications

Optical properties of single InGaN quantum dots and their devices

Optical properties of single InGaN quantum dots and their devices

Mapping Sub‐Surface Structure of Thin Films in Three Dimensions with an Optical Near‐Field

Electroluminescence from isolated single indium gallium nitride quantum dots up to 150 K

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