Electrically Dynamic Configurable WSe<sub>2</sub> Transistor and the Applications in Photodetector

Bu, Tong; Duan, Xinpei; Liu, Chang; Su, Wanhan; Hong, Xitong; Hong, Ruohao; Zhou, Xinjie; Liu, Yuan; Fan, Zhiyong; Zou, Xuming; Liao, Lei; Liu, Xingqiang

doi:10.1002/adfm.202305490

Cited by 10 publications

(4 citation statements)

References 53 publications

(54 reference statements)

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“…11 Bu et al introduced a dual top-gated electrostatic doping method to regulate polarity. 12 Electrostatic doping avoids damage to the device, whereas additional gates increase the complexity of the process. The physical doping of channel materials by depositing metals such as Cs and Cu also damages the interface.…”

Section: ■ Introductionmentioning

confidence: 99%

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Controlling the Polarity of WSe₂ FETs by Interface Engineering for High-Gain CMOS

Wang,

Huang,

Sun

et al. 2024

ACS Appl. Nano Mater.

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Controlled polarity regulation is one of the key obstacles to the practical application of two-dimensional semiconductor field-effect transistors (FETs). Herein, n-and p-channel WSe 2 -based FETs were fabricated through interface engineering.The n-and p-channel WSe 2 FETs were obtained via metal-oxide and CuInS 2 passivation, respectively. The performance of WSe 2 FETs did not degenerate during the doping process owing to the concept of damage-free integration. Hence, the field-effect mobility could exceed 20 and 64 cm 2 V −1 s −1 in n-and p-channel devices, respectively. Moreover, the polarity of WSe 2 FETs was continuously regulated through fine control of the thickness of the oxide layer and Cu content. Thus, n-and p-type WSe 2 FETs with excellent output matching were demonstrated, and complementary metal-oxide semiconductor inverters were fabricated. The complementary metal-oxide semiconductor inverter showed an ultrahigh voltage gain beyond 175 and a total noise margin of ∼85%, indicating an ultrahigh logic state transition speed and excellent anti-interference ability. Our results provided a damage-free and continuous method to adjust the polarity of WSe 2 FETs and support its practical application in next-generation integrated circuits.

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Section: ■ Introductionmentioning

confidence: 99%

“…Zhang et al reported the use of an ionic mica layer as top electrostatic gates to achieve reversible P/N transition . Bu et al introduced a dual top-gated electrostatic doping method to regulate polarity . Electrostatic doping avoids damage to the device, whereas additional gates increase the complexity of the process.…”

Section: Introductionmentioning

confidence: 99%

Controlling the Polarity of WSe₂ FETs by Interface Engineering for High-Gain CMOS

Wang,

Huang,

Sun

et al. 2024

ACS Appl. Nano Mater.

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“…Photodetectors based on BP exhibit broadband spectral and high photoresponse, which can be used for mid-infrared photodetection . The photodetectors based on molybdenum disulfide (MoS 2 ), molybdenum selenide (MoSe 2 ), tungsten Diselenide (WSe 2 ), and molybdenum telluride (MoTe 2 ) in 2D TMDCs also exhibit excellent performance in photodetection. But the poor environmental stability of BP hinders its commercialization process, , and most TMDCs have relatively low carrier mobility and narrow spectral response in the visible region. , …”

Section: Introductionmentioning

confidence: 99%

High-Efficiency Self-Powered Broadband Photodetector Based on PtSe₂/MoSe₂ Heterojunction

Che,

Li,

Wang

et al. 2024

ACS Photonics

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Platinum selenide (PtSe 2 ) is a new 2D transition metal dichalcogenide with tunable bandgap, high carrier mobility, and air stability, which has hopeful applications in high-performance photodetectors and microelectronic devices. However, low response and large dark current caused by the semimetal properties of PtSe 2 limit its applications. In this work, a PtSe 2 /MoSe 2 heterojunction photodetector is constructed for high-performance broadband selfpowered photodetection. The device exhibits a rectification ratio exceeding 10 5 , achieving an ultralow reverse current of 10 −12 A, and superior photovoltaic performance under illumination. The heterojunction photodetector can respond to a broadband spectrum from visible to near-infrared with an external quantum efficiency (EQE) of 64.2%, a photovoltaic responsivity of 275 mA/W, a photovoltaic specific detectivity of 1.96 × 10 11 Jones, and a filling factor of 0.46. In addition, a significant specific detectivity of 1.2 × 10 13 Jones, a high responsivity of 9.02 × 10 3 A/W, and an EQE of 2.1 × 10 7 % were obtained under forward bias (3 V). Moreover, the broadband imaging capability in both biasing and self-powered modes also proves the application potential of the PtSe 2 /MoSe 2 heterojunction photodetector. This work highlights the promising potential of 2D transition metal dichalcogenide for broadband, self-powered, and high-performance photodetection.

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“…The fabrication method for the WSe 2 AAT device is detailed in section 1 of the Supporting Information. The Raman spectrum shown in Figure S1 reveals a peak difference of 10 cm –1 between the E 2g 1 and A 1g vibration modes of WSe 2 , indicating that the channel material in the device is multilayer WSe 2 . , In the WSe 2 AAT, the WSe 2 region on SiO 2 can be modulated by electrical control of the back gate, while the WSe 2 region on Ti is only weakly modulated due to the screening effect of the bottom electrode Figure b shows the top view of a WSe 2 AAT.…”

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confidence: 99%

Light-Triggered Anti-ambipolar Transistor Based on an In-Plane Lateral Homojunction

Han,

Zhang,

Zhang

et al. 2024

Nano Lett.

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Currently, the construction of anti-ambipolar transistors (AATs) is primarily based on asymmetric heterostructures, which are challenging to fabricate. AATs used for photodetection are accompanied by dark currents that prove difficult to suppress, resulting in reduced sensitivity. This work presents light-triggered AATs based on an in-plane lateral WSe 2 homojunction without van der Waals heterostructures. In this device, the WSe 2 channel is partially electrically controlled by the back gate due to the screening effect of the bottom electrode, resulting in a homojunction that is dynamically modulated with gate voltage, exhibiting electrostatically reconfigurable and light-triggered anti-ambipolar behaviors. It exhibits high responsivity (188 A/W) and detectivity (8.94 × 10 14 Jones) under 635 nm illumination with a low power density of 0.23 μW/cm 2 , promising a new approach to low-power, high-performance photodetectors. Moreover, the device demonstrates efficient self-driven photodetection. Furthermore, ternary inverters are realized using monolithic WSe 2 , simplifying the manufacturing of multivalued logic devices.

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Electrically Dynamic Configurable WSe₂ Transistor and the Applications in Photodetector

Cited by 10 publications

References 53 publications

Controlling the Polarity of WSe₂ FETs by Interface Engineering for High-Gain CMOS

Controlling the Polarity of WSe₂ FETs by Interface Engineering for High-Gain CMOS

High-Efficiency Self-Powered Broadband Photodetector Based on PtSe₂/MoSe₂ Heterojunction

Light-Triggered Anti-ambipolar Transistor Based on an In-Plane Lateral Homojunction

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Electrically Dynamic Configurable WSe2 Transistor and the Applications in Photodetector

Cited by 10 publications

References 53 publications

Controlling the Polarity of WSe2 FETs by Interface Engineering for High-Gain CMOS

Controlling the Polarity of WSe2 FETs by Interface Engineering for High-Gain CMOS

High-Efficiency Self-Powered Broadband Photodetector Based on PtSe2/MoSe2 Heterojunction

Light-Triggered Anti-ambipolar Transistor Based on an In-Plane Lateral Homojunction

Contact Info

Product

Resources

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Electrically Dynamic Configurable WSe₂ Transistor and the Applications in Photodetector

Controlling the Polarity of WSe₂ FETs by Interface Engineering for High-Gain CMOS

Controlling the Polarity of WSe₂ FETs by Interface Engineering for High-Gain CMOS

High-Efficiency Self-Powered Broadband Photodetector Based on PtSe₂/MoSe₂ Heterojunction