Electrically Inert h-BN/Bilayer Graphene Interface in All-Two-Dimensional Heterostructure Field Effect Transistors

Uwanno, Teerayut; Taniguchi, Takashi; Watanabe, Kenji; Nagashio, Kosuke

doi:10.1021/acsami.8b08959

Cited by 32 publications

(42 citation statements)

References 61 publications

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“…Because the channel resistance reached ~5 G, Ioff has already reached the measurement limitation. Therefore, it is not meaningless to discuss Ion/Ioff, but it reaches ~510 5 [16]. Moreover, for Cgc in all 2D hetero, it is demonstrated that the electron trap/detrap response at this heterointerface is suppressed to an undetectable level in the measurement frequency range between 1 kHz and 2 MHz.…”

Section: All 2d Heterostructure Blg Fetmentioning

confidence: 93%

Understanding interface properties in 2D heterostructure FETs

Nagashio

2020

Semicond. Sci. Technol.

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Fifteen years have passed since graphene was first isolated on the substrate from bulk graphite. During that period, 2D layered materials with intrinsic band gaps have been realized. Although many exciting results have been reported for both their fundamental physics and applications, the discussion of 2D electron device application to the future integrated circuit is still based on the expectation of the inherently high properties that 2D materials ideally possess. This review article focuses on the gate stack property, which is one of most important building blocks in the field effect transistor. Starting from the comparison of the 2D/SiO2 interface properties with the conventional SiO2/Si interface properties, recent advances in the studies of gate stack properties for bilayer graphene and MoS2 FETs are discussed. In particular, the advantages and disadvantages of the 2D heterostructures with 2D insulator of h-BN are emphasized. This review may provide conceptual and experimental approaches for controlling the 2D heterointerface properties.

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Section: All 2d Heterostructure Blg Fetmentioning

confidence: 93%

Understanding interface properties in 2D heterostructure FETs

Nagashio

2020

Semicond. Sci. Technol.

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“…Moreover, the CVD growth of BNNTs around CNTs requires air-suspended CNTs and substrates that withstand high temperatures. Once uniform BN layers are formed, insulating properties of h-BN (Figure 9h) [3] that depend on its layer number should be controlled by selective etching of BNNT layers over CNTs [155,156] or other approaches for the use in electronic devices, where a good electrical contact to CNTs is necessary.…”

Section: Heterostructures Of Carbon Nanotubes Coated By Hexagonal Boron Nitridementioning

confidence: 99%

Nanotube‐Based 1D Heterostructures Coupled by van der Waals Forces

Cambré

Liu

Levshov

et al. 2021

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1D van der Waals heterostructures based on carbon nanotube templates are raising a lot of excitement due to the possibility of creating new optical and electronic properties, by either confining molecules inside their hollow core or by adding layers on the outside of the nanotube. In contrast to their 2D analogs, where the number of layers, atomic type and relative orientation of the constituting layers are the main parameters defining physical properties, 1D heterostructures provide an additional degree of freedom, i.e., their specific diameter and chiral structure, for engineering their characteristics. The current state-of-the-art in synthesizing 1D heterostructures are discussed here, in particular focusing on their resulting optical properties, and details the vast parameter space that can be used to design heterostructures with custombuilt properties that can be integrated into a large variety of applications. First, the effects of van der Waals coupling on the properties of the simplest and best-studied 1D heterostructure, namely a double-walled carbon nanotube, are described, and then heterostructures built from the inside and the outside are considered, which all use a nanotube as a template, and, finally, an outlook is provided for the future of this research field.

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“…[12][13][14][15] The magnitude of the band gap can be controlled by the intensity of the applied electric field, with reported experimental values up to 250 meV. 14,15 Because this overcomes some of the limitations of gap-less single layer graphene (SLG), the synthesis of AB-BLG is important for the fabrication of functional graphene-based semiconductor devices, such as field-effect transistors (FETs), 16 spintronic 17 and optoelectronic devices. 18 However, since even small twist angles of 0.1°modify the band structure of AB-BLG and prevents the band gap opening, 1,10,11,19 an almost perfect AB stacking is required for the device operations.…”

Section: Introductionmentioning

confidence: 99%

Isothermal growth and stacking evolution in highly uniform AB-stacked bilayer graphene

Solís‐Fernández¹,

Terao²,

Kawahara³

et al. 2019

Preprint

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Controlling the stacking order in bilayer graphene (BLG) allows realising unique physical properties. In particular, the possibility of tuning the band gap in AB-stacked BLG (AB-BLG) has a great technological importance for electronic and optoelectronics applications. Most of current methods to produce AB-BLG suffer from inhomogeneous layer thickness and/or coexistence with twisted BLG. Here, we demonstrate a method to synthesise highly pure large-area AB-BLG by chemical vapour deposition (CVD) using Cu-Ni films. Increasing the reaction time resulted in a gradual increase of the AB stacking, with the BLG eventually free from twist regions for the longer times (99.4 % of BLG has AB stacking), due to catalyst-assisted continuous BLG reconstruction driven by carbon dissolution-segregation processes. The band gap opening was confirmed by the electrical measurements. The concept of the continuous reconstruction to achieve highly pure AB-BLG offers a new strategy to control the stacking order of catalytically grown two-dimensional materials.

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Electrically Inert h-BN/Bilayer Graphene Interface in All-Two-Dimensional Heterostructure Field Effect Transistors

Cited by 32 publications

References 61 publications

Understanding interface properties in 2D heterostructure FETs

Understanding interface properties in 2D heterostructure FETs

Nanotube‐Based 1D Heterostructures Coupled by van der Waals Forces

Isothermal growth and stacking evolution in highly uniform AB-stacked bilayer graphene

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