Electrically pumped lasing from CdSe quantum dots

Klude, M.; Passow, T.; Kröger, Roland; Hommel, D.

doi:10.1049/el:20010764

Cited by 57 publications

(29 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Edge-emitters using ZnCdSSe quantum wells as the active part cover the whole wavelength range between 500 nm and 560 nm just by varying the Cd content [1], while a recently demonstrated laser containing CdSe quantum dots shows emission at 560 nm [2]. However, an electrically pumped monolithic vertical-cavity surface-emitting laser (VCSEL) emitting in the blue-green spectral region has not been realized yet.…”

mentioning

confidence: 99%

Green monolithic II–VI vertical‐cavity surface‐emitting laser operating at room temperature

Kruse

Ulrich

Alexe

et al. 2004

Physica Status Solidi (b)

Self Cite

View full text Add to dashboard Cite

The realization of a monolithic all II-VI-based vertical cavity surface emitting laser (VCSEL) for the green spectral region is reported. Optically pumped lasing operation was achieved up to room temperature using a planar VCSEL structure. Taking advantage of distributed Bragg-reflectors based on MgS/Zn(Cd)Se superlattices as the low-refractive index material and ZnS 0.06 Se 0.94 layers as the high-index material with a refractive index contrast of ∆n = 0.6, a quality factor exceeding Q = 2000 is reached by using only 18 Bragg periods for the bottom DBR and 15 Bragg periods for the top DBR. The threshold power density is 0.32 MW/cm 2 at a temperature of 10 K (emission wavelength 498.5 nm) and 1.9 MW/cm 2 at room temperature (emission wavelength 502.3 nm).1 Introduction Up to now, only II-VI-based laser diodes are able to provide laser emission in the blue-green spectral region. Edge-emitters using ZnCdSSe quantum wells as the active part cover the whole wavelength range between 500 nm and 560 nm just by varying the Cd content [1], while a recently demonstrated laser containing CdSe quantum dots shows emission at 560 nm [2]. However, an electrically pumped monolithic vertical-cavity surface-emitting laser (VCSEL) emitting in the blue-green spectral region has not been realized yet. This kind of devices is of high interest concerning optical data transmission using plastic optical fibers (POFs) because of their circular shaped low-divergence beam profile and the fact that they can easily be integrated into optical systems. POFs have their absorption minimum in the green and therefore II-VI-based surface emitters will increase the transmission length compared to the presently used red emitters where the damping is higher. Because of the small resonator length of a few hundred nanometers, the cavity of a VCSEL has to be surrounded by mirrors with reflectivities exceeding 99%. This can be achieved only by distributed Bragg reflectors (DBRs) consisting of a sufficient number of Bragg pairs. A Bragg-pair is made of a two layers with different refractive index and quarterwave optical thickness each. The higher the refractive index contrast between these layers, the lower is the overall number of Bragg-pairs needed for a certain reflectivity. Furthermore, DBRs with high index contrast provide a comparatively high field amplitude inside the cavity and therefore an improved overlap of optical wave and active region.In this paper we report on the growth of high-reflectivity DBRs with high index contrast using MgS/Zn(Cd)Se superlattices (SLs) for the low refractive index material and ZnSSe for the high index material. The structural properties and emission characteristics under optical pumping for a VCSEL realized by using these DBRs will be discussed.

show abstract

mentioning

confidence: 99%

Green monolithic II–VI vertical‐cavity surface‐emitting laser operating at room temperature

Kruse

Ulrich

Alexe

et al. 2004

Physica Status Solidi (b)

Self Cite

View full text Add to dashboard Cite

show abstract

“…Планарные массивы CdSe (CdZnSe) QDs, формируемые в процессе самоор-ганизации при МВЕ-росте, использовались в качестве активной области лазерных структур, возбуждаемых оп-тически [2], электронным лучом [3] и при электрической накачке [4]. Показана также перспективность подобных систем для реализации излучателей неклассического света [5].…”

Section: Introductionunclassified

Резонансный Перенос Энергии В Плотном Массиве II-VI Квантовых Точек

Шубина¹,

Беляев²,

Семина³

et al. 2016

Физика Твердого Тела

View full text Add to dashboard Cite

Методами спектроскопии фотолюминесценции с временным и пространственным разрешением продемонстрирован ферстеровский резонансный перенос энергии в неоднородных плотных массивах эпитаксиальных квантовых точек CdSe/ZnSe, отличительной чертой которого является диполь-дипольное взаимодействие между основными экситонными уровнями маленьких квантовых точек и возбужденными уровнями больших точек, приводящее к эффективному сбору энергии и спектральной селекции ограниченного числа излучателей. Результаты теоретического моделирования оптических переходов в сфероидных квантовых точках с гауссовым потенциальным профилем согласуются с наблюдаемыми особенностями в оптических спектрах, вызванными изменением доминирующего механизма переноса энергии. Работа выполнена при поддержке Российского научного фонда (проект N 14-22-00107).

show abstract

“…For electrical driven devices near room temperature wide band gap semiconductors are needed. One material system which showed early results on QD lasing in the green spectral region has been the selenides [17]. The softness of this material and the low formation energy for dark line defects limits the device life time of edge emitting lasers to about 100 h [18].…”

mentioning

confidence: 99%

InGaN quantum dot growth in the limits of Stranski–Krastanov and spinodal decomposition

Figge

Tessarek

Aschenbrenner

et al. 2011

Physica Status Solidi (b)

View full text Add to dashboard Cite

Most commonly used for the self-assembling of InGaN quantum dots is a Stranski-Krastanov growth scheme. Often neglected is the influence of spinodal decomposition, although it is frequently discussed with quantum well growth. In this publication we will expose the influence of both mechanisms on the formation process of quantum dots. This paper gives an insight in the theoretical background of quantum dot formation and covers the growth by molecular beam epitaxy and metal organic vapor phase epitaxy. Stranski-Krastanov like growth has been verified by the surface evolution beyond the critical thickness as seen by atomic force microscopy on uncapped samples. The overgrowth of such samples led to dissolution of the quantum dots. Indium compositions within the miscibility gap below critical thickness yielded spinodal phase separation in meander like structures These structures are in agreement with the theory from Hilliard and Cahn. Based on spinodal decomposition overgrowth schemes have been developed which showed reliable quantum dot emission. Such layers have been implemented into device structures such as LEDs and laser structures.

show abstract

Electrically pumped lasing from CdSe quantum dots

Cited by 57 publications

References 3 publications

Green monolithic II–VI vertical‐cavity surface‐emitting laser operating at room temperature

Green monolithic II–VI vertical‐cavity surface‐emitting laser operating at room temperature

Резонансный Перенос Энергии В Плотном Массиве II-VI Квантовых Точек

InGaN quantum dot growth in the limits of Stranski–Krastanov and spinodal decomposition

Contact Info

Product

Resources

About