Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers

Shang, Chen; Feng, Kaiyin; Hughes, Eamonn T.; Clark, Andrew; Debnath, Mukul; Koscica, Rosalyn; Leake, Gerald; Herman, Joshua; Harame, D.L.; Ludewig, Peter; Wan, Yating; Bowers, John E.

doi:10.1038/s41377-022-00982-7

Cited by 48 publications

(48 citation statements)

References 37 publications

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“…Once the coupling efficiency issue is resolved, many selections of silicon photonic components can all be integrated monolithically on a single wafer, such as modulators, wavelength de-multiplexers and photodetectors, just to name a few. Meanwhile, QD laser growth on a 300 mm patterned (001) silicon wafer with butt-coupled configuration has also been recently demonstrated 48 , which leads to a great prospect for achieving dense on-chip integration. The next major step towards functional integration shall be including single longitudinal mode operation with high side mode suppression ratio (SMSR), which shall require implementing surface gratings or on-chip distributed bragg reflectors 49 .…”

Section: Discussionmentioning

confidence: 99%

Monolithic integration of embedded III-V lasers on SOI

Wei

Yang

et al. 2023

Light Sci Appl

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Silicon photonic integration has gained great success in many application fields owing to the excellent optical device properties and complementary metal-oxide semiconductor (CMOS) compatibility. Realizing monolithic integration of III-V lasers and silicon photonic components on single silicon wafer is recognized as a long-standing obstacle for ultra-dense photonic integration, which can provide considerable economical, energy-efficient and foundry-scalable on-chip light sources, that has not been reported yet. Here, we demonstrate embedded InAs/GaAs quantum dot (QD) lasers directly grown on trenched silicon-on-insulator (SOI) substrate, enabling monolithic integration with butt-coupled silicon waveguides. By utilizing the patterned grating structures inside pre-defined SOI trenches and unique epitaxial method via hybrid molecular beam epitaxy (MBE), high-performance embedded InAs QD lasers with monolithically out-coupled silicon waveguide are achieved on such template. By resolving the epitaxy and fabrication challenges in such monolithic integrated architecture, embedded III-V lasers on SOI with continuous-wave lasing up to 85 °C are obtained. The maximum output power of 6.8 mW can be measured from the end tip of the butt-coupled silicon waveguides, with estimated coupling efficiency of approximately -6.7 dB. The results presented here provide a scalable and low-cost epitaxial method for the realization of on-chip light sources directly coupling to the silicon photonic components for future high-density photonic integration.

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Section: Discussionmentioning

confidence: 99%

Monolithic integration of embedded III-V lasers on SOI

Wei

Yang

et al. 2023

Light Sci Appl

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“…11 PICs in different system-level applications with integrated on-chip lasers via different integration techniques. Insets adapted with permission from [ 21 , 189 , 190 ], copyright 2016 & 2021, OPG & AAAS & NPG …”

Section: Perspective and Future Outlookmentioning

confidence: 99%

“…Since current injection would go through the highly defective III-V/silicon interface, a large resistance was a concern. Nevertheless, recently high performance epitaxially grown QD lasers grown on 300 mm substrates with low resistance were demonstrated [92]. Monolithic integration with buttcoupled silicon waveguides has also been achieved with a maximum output power of 6.8 mW and estimated coupling efficiency of approximately -7.35 dB [44].…”

Section: Monolithic Integrationmentioning

confidence: 99%

Prospects and applications of on-chip lasers

Zhou

Fang

et al. 2023

eLight

Self Cite

137

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Integrated silicon photonics has sparked a significant ramp-up of investment in both academia and industry as a scalable, power-efficient, and eco-friendly solution. At the heart of this platform is the light source, which in itself, has been the focus of research and development extensively. This paper sheds light and conveys our perspective on the current state-of-the-art in different aspects of application-driven on-chip silicon lasers. We tackle this from two perspectives: device-level and system-wide points of view. In the former, the different routes taken in integrating on-chip lasers are explored from different material systems to the chosen integration methodologies. Then, the discussion focus is shifted towards system-wide applications that show great prospects in incorporating photonic integrated circuits (PIC) with on-chip lasers and active devices, namely, optical communications and interconnects, optical phased array-based LiDAR, sensors for chemical and biological analysis, integrated quantum technologies, and finally, optical computing. By leveraging the myriad inherent attractive features of integrated silicon photonics, this paper aims to inspire further development in incorporating PICs with on-chip lasers in, but not limited to, these applications for substantial performance gains, green solutions, and mass production.

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“…Thick buffer layers are di cult to implement on large-diameter wafers, as they are prone to formation of cracks and other defects arising from thermally induced stress. Recently, encouraging extensions of this work have been reported, featuring epitaxial growth in deep pockets etched in a siliconoxide masking layer on 300 mm [31] and 200 mm silicon photonics wafers [32]. However, the molecularbeam epitaxy (MBE) employed for the deposition of the QD gain stack is intrinsically non-selective, resulting in the deposition of a polycrystalline III-V lm outside of the targeted trenches, potentially hampering subsequent wafer-scale integration processes.…”

Section: Introductionmentioning

confidence: 99%

GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line

De Koninck,

Caer,

Yudistira

et al. 2023

Preprint

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Silicon photonics is a rapidly developing technology that promises to revolutionize the way we communicate, compute, and sense the world [1,2,3,4,5,6]. However, the lack of highly scalable, native CMOS-integrated light sources is one of the main factors hampering its widespread adoption. Despite significant progress in hybrid and heterogeneous integration of III-V light sources on silicon [7,8,9,10,11,12], monolithic integration by direct epitaxial growth of III-V materials remains the pinnacle in realizing cost-effective on-chip light sources. Here, we report the first electrically driven GaAs-based multi-quantum-well laser diodes fully fabricated on 300 mm Si wafers in a CMOS pilot manufacturing line. GaAs nano-ridge waveguides with embedded p-i-n diodes, InGaAs quantum wells and InGaP passivation layers are grown with high quality at wafer scale, leveraging selective-area epitaxy with aspect-ratio trapping. After III-V facet patterning and standard CMOS contact metallization, room-temperature continuous-wave lasing is demonstrated at wavelengths around 1020 nm in more than three hundred devices across a wafer, with threshold currents as low as 5 mA, output powers beyond 1 mW, laser linewidths down to 46 MHz, and laser operation up to 55 °C. These results illustrate the potential of the III-V/Si nano-ridge engineering concept for the monolithic integration of laser diodes in a Si photonics platform, enabling future cost-sensitive high-volume applications in optical sensing, interconnects and beyond.

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Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers

Cited by 48 publications

References 37 publications

Monolithic integration of embedded III-V lasers on SOI

Monolithic integration of embedded III-V lasers on SOI

Prospects and applications of on-chip lasers

GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line

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