Electrically stable polymer-only dielectrics for organic field-effect transistors with low gate leakage current

Nam, Sooji; Jeong, Yong Jin; Jang, Jaeyoung

doi:10.1016/j.orgel.2020.105828

Cited by 12 publications

(10 citation statements)

References 25 publications

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“…The high μ might result from facilitated charge transport along the channel direction due to the vertically-aligned and densely stacked pentacene molecules in the first few layers near the semiconductor/ dielectric interface, and to the overlapped π-π conjugation along the surface plane. The mobility is analogous to other top-contact pentacene field-effect transistors [31][32][33]. The steep SS is one of the lowest so far, and approaches the theoretical minimum of ∼0.059 V dec −1 .…”

Section: Organic Field-effect Transistorssupporting

confidence: 53%

Organic field-effect transistors with low-temperature curable high-k hybrid gate dielectrics

Liu

Wang²,

Li³

et al. 2022

Mater. Res. Express

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We report a low-voltage-operated organic field-effect transistor that uses a hybrid gate insulator that has a high dielectric constant k. The gate insulator consists of a high-k polymer cyanoetylated pullulan (CEP) that can be efficiently cross-linked by glycidoxypropyltrimethoxysilane (GOPTMS) at low temperature (~110°C). The very low curing temperature is below the glass transition temperature Tg of conventional plastic substrates for plastic electronics, and is therefore compatible with many plastic substrates for plastic electronics. The cross-linking is very efficient in that only 1/10 (w:w) GOPTMS: CEP produced densely cross-linked thin films with a smooth surface, good insulating property, high capacitance density and high k. The devices functioned at low voltage, and exhibited charge carrier mobility ~ 1.83 cm2 V-1 s-1, and steep substheshold swing ~88 mV dec-1. These results imply that high quality polymer gate insulators are achievable at low temperature with a very small fraction of blended crosslinking agents; this characteristic offers a method to achieve portable all-plastic flexible electronics that function at low voltage.

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Section: Organic Field-effect Transistorssupporting

confidence: 53%

Organic field-effect transistors with low-temperature curable high-k hybrid gate dielectrics

Liu

Wang²,

Li³

et al. 2022

Mater. Res. Express

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“…The lower leakage current densities of PVA/PMF were attributed to the crosslinking between PVA chains with the aid of PMF, which resulted in dense films with a low free volume. [18,26,27] To verify the use of EHD-printed GI layers in electronic applications, p-or n-type OSCs were deposited on the GI layers, after which their morphologies and crystal orientations were investigated. Figure 4 shows the AFM topography of a 50 nm-thick OSC thin film of p-type 2,9-di-decyl-dinaphtho-[2,3-b:2 0 ,3 0 -f]thieno-[3,2-b]-thiophene (C10-DNTT) (Figure 4a) and n-type N 0 -ditridecylperylene-3 0 ,4,9,10-tetracarboxylic diimide (PTCDI-C13) (Figure 4b) deposited on the different PVA/PMF dielectric layers.…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Electrohydrodynamic‐Printed Polyvinyl Alcohol‐Based Gate Insulators for Organic Integrated Devices

et al. 2021

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Organic printable dielectric layers are required for next‐generation electronic circuits, particularly those used as gate insulators (GIs) in organic field‐effect transistors (OFETs). Herein, optimized electrohydrodynamic (EHD) jet printing with an electrostatic force‐assisted mode is suggested for the fabrication of polyvinyl alcohol (PVA)‐based dielectric patterns after careful consideration of the ink system. The PVA molecules maintain good solubility in polar solvents, even when a crosslinking agent is added, which enables a continuous PVA jet stream with a width smaller than the diameter of the nozzle to be stably obtained. Subsequent EHD printing produces uniform PVA patterns with a smooth surface morphology suitable for the crystal growth of overlying organic semiconductors. The addition of a crosslinking agent in PVA results in direct GI patterns that exhibit superior insulating properties with high dielectric strength as compared with PVA without crosslinking agents. The OFETs with PVA‐based GIs prepared with EHD printing show stable operation with low gate leakage currents. In addition, the feasibility of EHD‐printed PVA layers is demonstrated for application as GIs in organic complementary logic gates.

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“…The crystalline patterned TIPS-PEN film was found to exist only in the channel region of the device array, leaving the unexposed film in a lower-crystalline or amorphous state to minimize leakage currents between devices. 22 2. EXPERIMENTAL SECTION 2.1.…”

Section: Introductionmentioning

confidence: 99%

“…Furthermore, we improved the crystallinity of specific regions of TIPS-PEN semiconducting films by selectively exposing the films to UV light using a patterned mask. The crystalline patterned TIPS-PEN film was found to exist only in the channel region of the device array, leaving the unexposed film in a lower-crystalline or amorphous state to minimize leakage currents between devices …”

Section: Introductionmentioning

confidence: 99%

Ultraviolet-Light-Induced Growth of 6,13-Bis(triisopropylsilylethynyl)pentacene Spherulites

2021

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Spin-cast small π-conjugated molecules exhibit poor molecular order because of rapid evaporation of the solvent, resulting in low charge-carrier mobility. Herein, we present simple ultraviolet (UV) exposure methods as a versatile post-treatment for inducing the growth of crystalline spherulites of 6,13-bis-(triisopropylsilylethynyl)pentacene (TIPS-PEN). The UV exposure effectively transformed the amorphous state into a crystalline phase in the solid films. UV exposure of the TIPS-PEN films spincast using toluene with a high boiling point improved the intermolecular interaction within only a few minutes, which enhanced charge-carrier transport in organic transistors prepared using these films. The presence of residual solvent facilitated the mobilization of TIPS-PEN molecules, enabling their reorganization. Furthermore, UV exposure of the patterned specific regions in TIPS-PEN films reduced the off-state currents in the organic transistors prepared using the films.

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Electrically stable polymer-only dielectrics for organic field-effect transistors with low gate leakage current

Cited by 12 publications

References 25 publications

Organic field-effect transistors with low-temperature curable high-k hybrid gate dielectrics

Organic field-effect transistors with low-temperature curable high-k hybrid gate dielectrics

Electrohydrodynamic‐Printed Polyvinyl Alcohol‐Based Gate Insulators for Organic Integrated Devices

Ultraviolet-Light-Induced Growth of 6,13-Bis(triisopropylsilylethynyl)pentacene Spherulites

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