Electricalperformance of multilayer MoS&lt;inf&gt;2&lt;/inf&gt; transistor with ALD HfTiO gate dielectric

Wen, Ming; Xu, Jing-Ping; Liu, L.; Huang, Yixiao; Lai, P. T.; Tang, Wing Man

doi:10.1109/edssc.2016.7785200

Cited by 1 publication

(2 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The optimal k value (30) for the MOSFET is more practical than the very high value (200) for its Si counterpart. La2O3 and LaAlO3 [37], LaTiO [38] and HfTiO [39] can be the potential high-k material candidates. By magnetron sputtering or atomic layer deposition, the high-k material can be deposited to fill up the trench [39], [40].…”

Section: Discussionmentioning

confidence: 99%

See 1 more Smart Citation

Simulation Study of 4H-SiC High-k Pillar MOSFET With Integrated Schottky Barrier Diode

Zheng¹,

Tang

Chau³

et al. 2021

IEEE J. Electron Devices Soc.

View full text Add to dashboard Cite

A SiC high-k (HK) split-gate (SG) MOSFET is proposed with a Schottky barrier diode (SBD) integrated between the split gates, and is investigated by numerical TCAD simulation. Results show that it has the same breakdown voltage as the SiC high-k (HK) MOSFET with an optimized and practical k value of 30 for its insulation pillar, which results in the highest breakdown voltage (1857 V). The forward voltage (VF) and reverse recovery charge (QRR) of the device are 0.9 V and 3.49 μC/cm 2 respectively, much lower than those of the SiC HK MOSFET due to the SBD. Moreover, lower reverse transfer capacitance (CRSS), smaller gate charge (QG), and smaller gate-to-drain charge (QGD) are achieved for the proposed device because of the split-gates, leading to much lower switching power loss when compared with the SiC HK MOSFET. All these results indicate that the SiC HK SG-MOSFET has promising potential in future power electronics applications.

show abstract

Section: Discussionmentioning

confidence: 99%

“…La2O3 and LaAlO3 [37], LaTiO [38] and HfTiO [39] can be the potential high-k material candidates. By magnetron sputtering or atomic layer deposition, the high-k material can be deposited to fill up the trench [39], [40]. Then, the device is integrated with a Schottky barrier diode to form a new device -SiC HK SG-MOSFET.…”

Section: Discussionmentioning

confidence: 99%