Electro‐optic Devices

Temperature‐dependent simultaneous measurement of birefringence and optical rotatory power (ORP) for orthorhombic crystals of potassium titanyl phosphate (KTP) and potassium titanyl arsenate (KTA) has been achieved by using the high‐accuracy universal polarimeter method at 632.8 nm wavelength. The birefringence and ORP changes along the (110) planes for KTA and KTP crystals were found to have a nearly parabolic form for the temperature range 297–493 K. The thermal variation coefficients were found to be 0.9 (5) × 10−5 K−1 and 5.6 (3) × 10−8 K−2 for KTA and 0.9 (5) × 10−5 K−1 and 5.7 (3) × 10−8 K−2 for KTP. The ORPs at 297 K were found to be 20.0 (20) and 20.5 (15)° mm−1 for KTA and KTP, respectively. The thermal variation coefficients of the ORP were found to be 1.8 (2) × 10−3° mm−1 K−1 and 1.1 (1) × 10–5° mm−1 K−2 for KTA and 1.9 (2) × 10−3° mm−1 K−1 and 1.2 (1) × 10−5° mm−1 K−2 for KTP.

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“…The refractive indices n 1 and n 2 of the waves with slower and faster velocity, respectively, are given by (Maldonado, 2007;Yin et al, 2007)…”

Section: Appendix a Jones Formalism Of Haup Equationsmentioning

confidence: 99%

“…In this context, uniaxial and biaxial crystals are very suitable materials for the technological utilization of these properties in such fields as spectral filters, high-speed optical modulators for transmission of optical signs, optical displays etc. (Maldonado, 2007).…”

Section: Introductionmentioning

confidence: 99%

Temperature-dependent optical rotatory power in the presence of birefringence of KTA and KTP crystals by the high-accuracy universal polarimeter method at 632.8 nm wavelength

et al. 2014

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“…To switch our focus back to the performance of the SOI modulator itself, an important metric is the speed or bandwidth. For optical modulators, the bandwidth is typically defined as the RF frequency at which the modulation index is reduced by half or drops by 3 dB, as compared to low frequencies [263,[277][278][279]. It should be stressed that the modulation index is defined in the optical domain, i.e.…”

Section: Improving the Modulator Bandwidthmentioning

confidence: 99%

Millimeter-wave generation using hybrid silicon photonics

Degli-Eredi

Jacob

et al. 2021

J. Opt.

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Technological innovation with millimeter waves (mm waves), signals having carrier frequencies between 30 and 300 GHz, has become an increasingly important research field. While it is challenging to generate and distribute these high frequency signals using all-electronic means, photonic techniques that transfer the signals to the optical domain for processing can alleviate several of the issues that plague electronic components. By realizing optical signal processing in a photonic integrated circuit (PIC), one can considerably improve the performance, footprint, cost, weight, and energy efficiency of photonics-based mm-wave technologies. In this article, we detail the applications that rely on mm-wave generation and review the requirements for photonics-based technologies to achieve this functionality. We give an overview of the different PIC platforms, with a particular focus on hybrid silicon photonics, and detail how the performance of two key components in the generation of mm waves, photodetectors and modulators, can be optimized in these platforms. Finally, we discuss the potential of hybrid silicon photonics for extending mm-wave generation towards the THz domain and provide an outlook on whether these mm-wave applications will be a new milestone in the evolution of hybrid silicon photonics.

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“…5 Most optical sideband generation schemes involve using an electro-optic modulator (EOM). 6 This form of modulation has long offered optical sidebands as high as tens of GHz away from the carrier frequency. 7 Bulk crystal phase modulators can produce sidebands on a laser beam of several Watts, but have a high V π (the voltage required for π radian phase modulation is a few hundred volts).…”

mentioning

confidence: 99%

Note: Efficient generation of optical sidebands at GHz with a high-power tapered amplifier

Zappala

Bailey

et al. 2014

Review of Scientific Instruments

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Two methods using a laser-diode tapered amplifier to produce high-power, high-efficiency optical frequency sidebands over a wide tunable frequency range are studied and compared. For a total output of 500 mW at 811 nm, 20% of the power can be placed in each of the first-order sidebands. Functionality and characterization are presented within the sideband frequency region of 0.8-2.3 GHz, and it is shown that both methods can be applied beyond this frequency range. These methods provide a versatile and effective tool for atomic physics experiments.

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Electro‐optic Devices

Cited by 6 publications

References 84 publications

Temperature-dependent optical rotatory power in the presence of birefringence of KTA and KTP crystals by the high-accuracy universal polarimeter method at 632.8 nm wavelength

Temperature-dependent optical rotatory power in the presence of birefringence of KTA and KTP crystals by the high-accuracy universal polarimeter method at 632.8 nm wavelength

Millimeter-wave generation using hybrid silicon photonics

Note: Efficient generation of optical sidebands at GHz with a high-power tapered amplifier

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