2007
DOI: 10.1016/j.optmat.2005.12.007
|View full text |Cite
|
Sign up to set email alerts
|

Electro-optic effect in c-axis oriented ZnO thin films prepared by rf magnetron sputtering

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

0
6
0

Year Published

2008
2008
2022
2022

Publication Types

Select...
6

Relationship

0
6

Authors

Journals

citations
Cited by 10 publications
(6 citation statements)
references
References 11 publications
0
6
0
Order By: Relevance
“…As a representative, the refractive index of the TE 127 mode under different applied bias can be calculated by fixing the value of D , N , and λ, as shown in Figure 5b. The refractive index variation (∆ n ) versus the applied electric field ( E ) for TE 127 mode in experiment is plotted in Figure 5c, which exhibits a linear relationship and matches with linear electro‐optic effect (Pockels effect) as following equation: [ 21 ] Δnbadbreak=12n03γE\[ \begin{array}{*{20}{c}}{\Delta n = \frac{1}{2}n_0^3\gamma E}\end{array} \] where n 0 and γ are the refractive index of the ZnO microrod at 0 bias and the electro‐optic coefficient, respectively. Based on the experimental data in Figure 5c, the corresponding γ can be estimated according to Equation ().…”
Section: Resultsmentioning
confidence: 80%
See 1 more Smart Citation
“…As a representative, the refractive index of the TE 127 mode under different applied bias can be calculated by fixing the value of D , N , and λ, as shown in Figure 5b. The refractive index variation (∆ n ) versus the applied electric field ( E ) for TE 127 mode in experiment is plotted in Figure 5c, which exhibits a linear relationship and matches with linear electro‐optic effect (Pockels effect) as following equation: [ 21 ] Δnbadbreak=12n03γE\[ \begin{array}{*{20}{c}}{\Delta n = \frac{1}{2}n_0^3\gamma E}\end{array} \] where n 0 and γ are the refractive index of the ZnO microrod at 0 bias and the electro‐optic coefficient, respectively. Based on the experimental data in Figure 5c, the corresponding γ can be estimated according to Equation ().…”
Section: Resultsmentioning
confidence: 80%
“…As a representative, the refractive index of the TE 127 mode under different applied bias can be calculated by fixing the value of D, N, and λ, as shown in Figure 5b. The refractive index variation (∆n) versus the applied electric field (E) for TE 127 mode in experiment is plotted in Figure 5c, which exhibits a linear relationship and matches with linear electro-optic effect (Pockels effect) as following equation: [21] 1 2…”
Section: Mode Shift Under Electric Field E∥c-axismentioning
confidence: 66%
“…Before reaction, the ITO was cleaned with acetone, ethanol and deionized water for 30 min, respectively. Different amount of zinc nitrate hydrate (Zn(NO 3 ) 2 •6H 2 O) was dissolved in 250 ml of deionized water, and the concentration of Zn(NO 3 ) 2 Microstructures of ZnO thin films were characterized by X-ray diffraction (XRD, MAC, M18XHF) using CuKα radiation (1.54 Å). Surface morphology of ZnO thin films were characterized by fieldemission scanning electron microscope (FE-SEM, Hitachi, S4800).…”
Section: Methodsmentioning
confidence: 99%
“…As an important wide bandgap (3.37 eV) semiconductor with a large exciton binding energy (60 meV), the wurtzite ZnO has triggered great interest in the past decade due to its great performance and potential applications in electro-optics, [1][2][3] ferroelectric, 3 pyroelectricity and piezoelectricity, 4,5 catalysis, 6 and sensors. 7 According to different particle shape, size, crystal structure, crystal form and applications, there are different preparation methods such as magnetron sputtering, 8,9 spray pyrolysis, 10,11 atomic layer epitaxy, 12 molecular beam epitaxy 13,14 pulsed laser deposition, 15,16 sol-gel, 17,18 hydrothermal synthesis, [19][20][21][22] cathodic electrodeposition, [23][24][25] and so on.…”
mentioning
confidence: 99%
“…In particular, wurtzite ZnO, a material that has found applications in technologies exploiting its piezoelectric and photoelastic properties, [1][2][3][4] has experienced renewed interest for use in semiconductor light emitters and detectors. [5][6][7][8][9] In recent decades application of this material in such technology has been impeded by the difficulty of achieving the stable p-type doping necessary for device engineering.…”
Section: Introductionmentioning
confidence: 99%