2000
DOI: 10.1063/1.125889
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Electro-optic measurements of the ferroelectric-paraelectric boundary in Ba1−xSrxTiO3 materials chips

Abstract: Ferroelectric domain wall relaxation in Ba 0.25 Sr 0.75 Ti O 3 films displaying Curie-Weiss behavior

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Cited by 66 publications
(29 citation statements)
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“…The same precursor principle can also be applied to continuous compositional-spread (CCS) approaches, where the composition varies uniformly and continuously across the sample. [2][3][4] However, for materials that are not formed by the equilibrium processes involved in the precursor method, and in general for materials with properties that depend strongly on the deposition technique, alternate approaches must be developed that are based on the in-situ formation of the desired alloys.…”
Section: Introductionmentioning
confidence: 99%
“…The same precursor principle can also be applied to continuous compositional-spread (CCS) approaches, where the composition varies uniformly and continuously across the sample. [2][3][4] However, for materials that are not formed by the equilibrium processes involved in the precursor method, and in general for materials with properties that depend strongly on the deposition technique, alternate approaches must be developed that are based on the in-situ formation of the desired alloys.…”
Section: Introductionmentioning
confidence: 99%
“…1 Great efforts have been made to explore suitable ferroelectric oxide materials that have large E-O coefficient and can be epitaxially grown on low-refractive-index substrates. [2][3][4][5] Ba 1−x Sr x TiO 3 ͑BST͒, traditionally considered as a superior microwave dielectric material for application in wireless communication, has recently attracted much attention in the optoelectronic community because of its combination of high E-O coefficients, 6,7 high optical clarity, and low optical loss. 8,9 Furthermore, BST thin films have potential to overcome the major drawbacks of currently used E-O ferroelectric materials, such as the high cost and long optical path length of LiNbO 3 and LiTaO 3 single crystals and the environmental burden of lead content in ͑Pb, La͒͑Zr, Ti͒O 3 transparent ceramics and thin films.…”
mentioning
confidence: 99%
“…From our model we conclude that the electric hysteresis must also be associated with a strong externally observable piezoelectric strain, under which the piezoelectric ZnO and BTO layers may compress or expand. Likewise, the in- dices of refraction should reflect compression and expansion as well as the ferroelectric domain coherency [8,9]. Figs.…”
Section: Methodsmentioning
confidence: 99%
“…Arrangement of ferroelectric domains under the influence of external fields forms a strong lattice polarization, which in turn affects the layer by strain. The strain either compresses or expands the lattice, leading further to increase or decrease of the index of refraction, respectively [8,9]. The piezoelectric coefficient d relates electric field E and thickness change: δd = dEd [15].…”
Section: Piezoelectric Index Of Refraction and Thickness Changesmentioning
confidence: 99%