Electro-optic polymer infiltrated silicon photonic crystal slot waveguide modulator with 23 dB slow light enhancement

Lin, Che Yun; Wang, Xiaolong; Chakravarty, Swapnajit; Lee, Beom Suk; Lai, Wei-Cheng; Luo, Jingdong; Jen, Alex K.‐Y.; Chen, Ray T.

doi:10.1063/1.3486225

Cited by 110 publications

(64 citation statements)

References 17 publications

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“…It is therefore most desirable to have a moderate field magnitude, to prevent excessive lattice deformation, with increased field penetration to insure high EO response. 15,16 Second, the halfwave voltages and switching times of modulators are calculated, according to Eq. (9) and (11).…”

Section: Resultsmentioning

confidence: 99%

Modeling of multilayer electrode performance in transverse electro-optic modulators

Zhu

Chen

et al. 2011

AIP Advances

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For some electro-optic (EO) modulators, lowering the driving voltage is necessary to reduce the power consumption of the modulators. There are four significant factors influencing the driving voltage of the EO modulators: geometrical parameters of wafer and electrodes, surface and embedded electrodes, material properties of wafer, and structure of modulators. Using the superposition method and surface charge technique, the electric fields, halfwave voltages, switching times and optical transmissions of EO modulators with two-layer, three-layer, and four-layer electrodes are calculated, respectively. It is found that the halfwave voltage decreases while the switching time increase slightly as the number of layers increases. Such study demonstrates that using multilayer electrodes is an effective technique of lowering the halfwave voltage, which may have implication of EO modulator design

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Section: Resultsmentioning

confidence: 99%

Modeling of multilayer electrode performance in transverse electro-optic modulators

Zhu

Chen

et al. 2011

AIP Advances

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“…From the output optical waveform measured by the digital oscilloscope, over-modulation is observed. The V π of the modulator is measured to be 0.973V from the transfer function of the over-modulated optical signal and the input RF signal on the oscilloscope, by finding the difference between the applied voltage at which the optical output is at a maximum and the voltage at which the optical output is at the following minimum [1, 3,7,20,21]. The effective indevice r 33 is then calculated to be (1) where, λ=1.55µm, S w =320nm, n=1.63, L=300µm, σ=0.33 (confinement factor in the slot) calculated by simulation.…”

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confidence: 99%

Wide optical spectrum range, subvolt, compact modulator based on an electro-optic polymer refilled silicon slot photonic crystal waveguide

et al. 2013

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We design and demonstrate a compact and low-power band-engineered electro-optic (EO) polymer refilled silicon slot photonic crystal waveguide (PCW) modulator. The EO polymer is engineered for large EO activity and near-infrared transparency. A PCW step coupler is used for optimum coupling to the slow-light mode of the band-engineered PCW. The half-wave switching-voltage is measured to be Vπ=0.97±0.02V over optical spectrum range of 8nm, corresponding to the effective in-device r33 of 1190pm/V and Vπ×L of 0.291±0.006V×mm in a push-pull configuration. Excluding the slow-light effect, we estimate the EO polymer is poled with an efficiency of 89pm/V in the slot. [6]. The fabrication process of these devices involves the poling of the EO polymer at an elevated temperature. Unfortunately, the leakage current due to the charge injection through silicon/polymer interface significantly reduces the poling efficiency in narrow slot waveguides (slot width, S w <200nm). Among the abovementioned structure, the slot PCW can support optical mode for S w as large as 320nm [7]. Such a wide slot was shown to reduce the leakage current by two orders of magnitude resulting in 5х improvement in the in-device r 33 compared to a slot PCW with S w =75nm [7].One problem remains among slot PCW modulators is their narrow operating optical bandwidth of <1nm [8][9][10] because of the high group velocity dispersion (GVD) in the slow-light optical spectrum range. To broaden the operating optical bandwidth of PCW modulators, lattice shifted PCWs can be employed, where the spatial shift of certain holes can modify the structure to provide low-dispersion slow light [11][12][13][14][15].In this letter we report a symmetric MZI modulator based on band-engineered slot PCW refilled with EO polymer, SEO125 from Soluxra, LLC. SEO125 exhibits exceptional combination of large EO activity, low optical loss, and good temporal stability. Its r 33 value of poled thin films is around 125pm/V at the wavelength of 1310 nm, which is measured by the Teng-Man reflection technique. The design and synthesis of SEO125 encompasses recent development of highly efficient nonlinear optical chromophores with a few key molecular and material parameters, including large β values, good near-infrared transparency, excellent chemicaland photo-stability, and improved processability in polymers [16]. Using a band-engineered EO polymer refilled slot PCW with S w =320nm, we demonstrate a slow-light enhanced effective in-device r 33 of 1190pm/V over 8nm optical spectrum range. Excluding the slow-light effect, we estimate in-device material' r 33 of 89pm/V for SEO125 in the slot that show 51% improvement compared to the results (59pm/V) in [7]. A schematic of the device on silicon on insulator (SOI) (Si thickness=250nm, oxide thickness=3μm) is shown in Fig. 1 (a). The input and output strip waveguides are connected to the device using a strip-to-slot waveguide mode converter. PCW couplers consisting of a fast-light section [17] connect the mode converters to a 300μm-long slow-ligh...

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“…Several different polymers were so far investigated [120], and the most recent implementation of electrooptic modulators shares a common geometry based on slot WG filled with a nonlinear polymeric material [121][122][123][124]. Slot WG is a particular type of WG able to confine a large part of the guided mode field within the low index region [125].…”

Section: Polymers In Silicon Photonicsmentioning

confidence: 99%

Hybrid Materials for Integrated Photonics

Bettotti

2014

Advances in Optics

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In this review materials and technologies of the hybrid approach to integrated photonics (IP) are addressed. IP is nowadays a mature technology and is the most promising candidate to overcome the main limitations that electronics is facing due to the extreme level of integration it has achieved. IP will be based on silicon photonics in order to exploit the CMOS compatibility and the large infrastructures already available for the fabrication of devices. But silicon has severe limits especially concerning the development of active photonics: its low efficiency in photons emission and the limited capability to be used as modulator require finding suitable materials able to fulfill these fundamental tasks. Furthermore there is the need to define standardized processes to render these materials compatible with the CMOS process and to fully exploit their capabilities. This review describes the most promising materials and technological approaches that are either currently implemented or may be used in the coming future to develop next generations of hybrid IP devices.

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Electro-optic polymer infiltrated silicon photonic crystal slot waveguide modulator with 23 dB slow light enhancement

Cited by 110 publications

References 17 publications

Modeling of multilayer electrode performance in transverse electro-optic modulators

Modeling of multilayer electrode performance in transverse electro-optic modulators

Wide optical spectrum range, subvolt, compact modulator based on an electro-optic polymer refilled silicon slot photonic crystal waveguide

Hybrid Materials for Integrated Photonics

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