Electro‐Optical Performance of Surface‐Emitting Micromirror Superluminescent Diodes

Abstract

Output power characteristics and efficiency of novel surface‐emitting superluminescent diodes are presented. Tilted micromirrors terminate an in‐plane waveguide, and laterally gain‐guided modes are deflected perpendicularly to the anti‐reflection‐coated chip surface. The epitaxial structures are grown by a metal‐organic vapor‐phase epitaxy with several InGaAs/GaAs quantum wells emitting at a peak wavelength of 950 nm, and the chip technology involves only wafer‐scale processes. The spectral full width at half maximum of the amplified spontaneous emission is larger than 10 nm. In a pulsed operation, a room temperature output power that exceeds 250 mW with a wall‐plug efficiency higher than 15% is achieved.

Light‐Emitting Device Based on Amplified Spontaneous Emission

“…Reproduced with permission. [ 139 ] Copyright 2019, Wiley‐VCH GmbH & Co. KGaA, Weinheim. d) Schematic diagram of the device structure with top Ag and the bottom DBR made of SiO 2 and amorphous Si.…”

“…In addition, the choice of silicon with high thermal conductivity can improve heat dissipation. [ 139 ]…”

“…Another way to improve the performances of ASE devices is to use both ends of the waveguide as light-emitting facets to form a surface emitting structure. [139] The surface emitting ASE device was demonstrated for the first time in 2005. Vaissié et al used nonresonant grating couplers to prepare crossed-beam SLD (Figure 10a).…”

“…In addition, the choice of silicon with high thermal conductivity can improve heat dissipation. [139] ASE can be achieved under electrically pumped conditions by coupling emission from QDs such as PbS, PbSe, CdSe, etc. into a suitable resonant cavity.…”

“…The emission window above the micromirror is covered with ARC. Reproduced with permission [139]. Copyright 2019, Wiley-VCH GmbH & Co. KGaA, Weinheim.…”