Electro-optical response of a single-crystal diamond ultraviolet photoconductor in transverse configuration

Sio, A. De; Achard, Jocelyn; Tallaire, Alexandre; Sussmann, R.S.; Collins, A T; Silva, F; Pace, E.

doi:10.1063/1.1935039

Cited by 40 publications

(16 citation statements)

References 17 publications

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“…Chemical vapor deposited ͑CVD͒ diamond coatings have various applications in many fields, including tribology, mechanics, electronics, 1 optics, 2 and micro-/ nanoelectromechanical systems ͑MEMS/NEMS͒, 3,4 because of their unique properties. However, the broader applications of diamond coatings are hindered by their poor adhesion to substrates.…”

Section: Introductionmentioning

confidence: 99%

Adhesion at diamond/metal interfaces: A density functional theory study

Guo

2010

Journal of Applied Physics

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Experimental studies on relationships between the electron work function, adhesion, and friction for 3d transition metals J. Appl. Phys. 95, 7961 (2004) To understand the basic material properties required in selecting a metallic interlayer for enhanced adhesion of diamond coatings on the substrates, the interfaces between diamond and metals with different carbide formation enthalpies ͑Cu, Ti, and Al͒ are studied using density functional theory. It is found that the work of separation decreases, while the interface energy increases, with the carbide formation enthalpy ⌬H f ͑TiϽ AlϽ Cu͒. By comparing the work of separation at the interface with the work of decohesion of the metal, we found that the fracture is more likely to initiate in the metal phase near the interface; therefore a metal phase with a larger surface energy, ␥ s ͑TiϾ CuϾ Al͒, is needed to achieve a higher overall interface strength. In addition, when the surface energy is larger than the interface energy, a wetted diamond/metal interface is formed during diamond nucleation, providing the strongest adhesion compared to other growth modes. These results indicate that a strong carbide-forming ability and a large surface energy of the interlayer promote nucleation and enhance the adhesion and interface strength of the coating/substrate system.

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Section: Introductionmentioning

confidence: 99%

Adhesion at diamond/metal interfaces: A density functional theory study

Guo

2010

Journal of Applied Physics

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“…To this purpose, high microwave powers [9,10] and/or substrate pre-treatments [11][12][13], pulsed wave processes [14] and careful control of the misorientation angle of the substrate [15] have been utilized. Encouraging results have been obtained on UV and particle detectors [17][18][19][20][21][22] based on homoepitaxial CVD diamond samples.…”

Section: Introductionmentioning

confidence: 86%

Characterization of homoepitaxial diamond for ionizing radiation detectors

Donato

Faggio

Messina

et al. 2006

Journal of Non-Crystalline Solids

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“…The diamond, wide-bandgap (5.5 eV) semiconductor with outstanding physical properties is a very attractive material for application in electronic devices (1)(2)(3)(4)(5)(6). Diamond detectors are largely used to characterize laser-generated plasmas (7,8).…”

Section: Introductionmentioning

confidence: 99%

Single-crystal diamond MIS diode for deep UV detection

Alfieri

Almaviva

Sio

et al. 2010

Radiation Effects and Defects in Solids

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Due to its exceptional physical properties, synthetic diamond is an ideal material for the realization of UV and X-ray detectors to be used for the characterization of laser-generated plasmas. Diamond detectors are able to operate at high temperatures and in the presence of high fluxes of ionizing radiation, where traditional silicon-based detectors usually fail. In this paper, we report on Raman and electro-optical characterization of a structure consisting of intrinsic diamond/boron-doped diamond homoepitaxially grown by chemical vapor deposition onto a commercial high pressure high temperature Ib-type diamond substrate using a 1% CH 4 /H 2 gas mixture. A metal-insulator-semiconductor (MIS) diode was obtained by thermally evaporating an aluminum contact on the growth surface of the intrinsic layer. The detection capability of this device operating in transverse configuration was measured in the deep UV spectral range. The device sensitivity has been estimated at different biasing voltages and at two wavelengths having different penetration depths into the material. The device was also tested at zero biasing voltage (photovoltaic mode operation), showing quite a good photoresponse. These results suggest that MIS structures based on high-quality homoepitaxial diamonds may be successfully utilized for photodetection even at zero bias.

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Electro-optical response of a single-crystal diamond ultraviolet photoconductor in transverse configuration

Cited by 40 publications

References 17 publications

Adhesion at diamond/metal interfaces: A density functional theory study

Adhesion at diamond/metal interfaces: A density functional theory study

Characterization of homoepitaxial diamond for ionizing radiation detectors

Single-crystal diamond MIS diode for deep UV detection

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