Electro-optical switches

Li, B.J.

doi:10.1533/9780857090416.5

Cited by 3 publications

(1 citation statement)

References 28 publications

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“…An important advantage of a-SiC is the possibility to incorporate nitrogen as has been previously demonstrated 34 that could lead to conductive films and optical elements where the devices can be tuned directly with electrical contacts, therefore allowing configurations for, e.g., optical switches 35 or adding tunability to multimode interferometers (MMIs). 36 Experimental Methods.…”

Section: ■ Introductionmentioning

confidence: 99%

High-Quality Amorphous Silicon Carbide for Hybrid Photonic Integration Deposited at a Low Temperature

Lopez-Rodriguez,

van der Kolk,

Aggarwal

et al. 2023

ACS Photonics

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Integrated photonic platforms have proliferated in recent years, each demonstrating its unique strengths and shortcomings. Given the processing incompatibilities of different platforms, a formidable challenge in the field of integrated photonics still remains for combining the strengths of different optical materials in one hybrid integrated platform. Silicon carbide is a material of great interest because of its high refractive index, strong second-and third-order nonlinearities, and broad transparency window in the visible and near-infrared range. However, integrating silicon carbide (SiC) has been difficult, and current approaches rely on transfer bonding techniques that are timeconsuming, expensive, and lacking precision in layer thickness. Here, we demonstrate high-index amorphous silicon carbide (a-SiC) films deposited at 150 °C and verify the high performance of the platform by fabricating standard photonic waveguides and ring resonators. The intrinsic quality factors of single-mode ring resonators were in the range of Q int = (4.7−5.7) × 10 5 corresponding to optical losses between 0.78 and 1.06 dB/cm. We then demonstrate the potential of this platform for future heterogeneous integration with ultralow-loss thin SiN and LiNbO 3 platforms.

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Section: ■ Introductionmentioning

confidence: 99%

High-Quality Amorphous Silicon Carbide for Hybrid Photonic Integration Deposited at a Low Temperature

Lopez-Rodriguez,

van der Kolk,

Aggarwal

et al. 2023

ACS Photonics

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Electro‐Optic Switches

Adhikari

Sengupta²,

De³

2022

Optical Switching

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Switching, amplifying, and chirping diode lasers with current pulses for high bandwidth quantum technologies

Buser

2024

Review of Scientific Instruments

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A series of simple and low-cost devices for switching, amplifying, and chirping diode lasers based on current modulation are presented. Direct modulation of diode laser currents is rarely sufficient to establish precise amplitude and phase control over light, as its effects on these parameters are not independent. These devices overcome this limitation by exploiting amplifier saturation and dramatically outperform commonly used external modulators in key figures of merit for quantum technological applications. Semiconductor optical amplifiers operated on either rubidium D line are recast as intensity switches and shown to achieve ON:OFF ratios >106 in as little as 50 ns. Current is switched to a 795 nm wavelength (Rb D1) tapered amplifier to produce optical pulses of few nanosecond duration and peak powers of 3 W at a similar extinction ratio. Fast rf pulses are applied directly to a laser diode to shift its emission frequency by up to 300 MHz in either direction and at a maximum chirp rate of 150 MHz ns−1. Finally, the latter components are combined, yielding a system that produces watt-level optical pulses with arbitrary frequency chirps in the given range and <2% residual intensity variation, all within 65 ns upon asynchronous demand. Such systems have broad application in atomic, molecular, and optical physics and are of particular interest to fast experiments simultaneously requiring high power and low noise, for example, quantum memory experiments with atomic vapors.

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Electro-optical switches

Cited by 3 publications

References 28 publications

High-Quality Amorphous Silicon Carbide for Hybrid Photonic Integration Deposited at a Low Temperature

High-Quality Amorphous Silicon Carbide for Hybrid Photonic Integration Deposited at a Low Temperature

Electro‐Optic Switches

Switching, amplifying, and chirping diode lasers with current pulses for high bandwidth quantum technologies

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