Electro-Thermal Analysis of Oxide-Confined Vertical-Cavity Lasers

Piprek, Joachim

doi:10.1002/1521-396x(200112)188:3<905::aid-pssa905>3.0.co;2-a

Cited by 11 publications

(5 citation statements)

References 28 publications

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“…Some type of electrical confinement structure is required that forces the carriers to move into the small center region where the optical mode is located [2]. Last, but not least, the small lateral extension of the active region causes a potentially high thermal resistance so that good thermal conductivity is another essential requirement of VCSEL design [3]. A more detailed review on VCSELs is given in [4].…”

Section: Introduction To Vertical-cavity Lasersmentioning

confidence: 99%

Electronic Properties of InGaN/GaN Vertical‐Cavity Lasers

Piprek¹,

DenBaars

et al. 2007

Nitride Semiconductor Devices: Principles and Simulation

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Section: Introduction To Vertical-cavity Lasersmentioning

confidence: 99%

Electronic Properties of InGaN/GaN Vertical‐Cavity Lasers

Piprek¹,

DenBaars

et al. 2007

Nitride Semiconductor Devices: Principles and Simulation

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“…The voltage drop across the DBRs is caused by interface barriers, which increase the resistance and the threshold voltage. 12 The heat transfer equation is solved by defining an initial constant value of temperature T 0 for all VCSEL materials. The device structure of our VCSELs used in this work is described in detail in Ref.…”

mentioning

confidence: 99%

Thermal analysis of high-bandwidth and energy-efficient 980 nm VCSELs with optimized quantum well gain peak-to-cavity resonance wavelength offset

Wolf

Jia

et al. 2017

Applied Physics Letters

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The static and dynamic performance of vertical-cavity surface-emitting lasers (VCSELs) used as light-sources for optical interconnects is highly influenced by temperature. We study the effect of temperature on the performance of high-speed energy-efficient 980 nm VCSELs with a peak wavelength of the quantum well offset to the wavelength of the fundamental longitudinal device cavity mode so that they are aligned at around 60 °C. A simple method to obtain the thermal resistance of the VCSELs as a function of ambient temperature is described, allowing us to extract the active region temperature and the temperature dependence of the dynamic and static parameters. At low bias currents, we can see an increase of the −3 dB modulation bandwidth f−3dB with increasing active region temperature, which is different from the classically known situation. From the detailed analysis of f−3dB versus the active region temperature, we obtain a better understanding of the thermal limitations of VCSELs, giving a basis for next generation device designs with improved temperature stability.

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“…Small oxide or proton-implant apertures must be used [2] to achieve transverse single-mode radiation. However, a small radius of the VCSEL aperture results in low radiation output due to a reduced active area [2] and also introduces thermal problems [3].…”

Section: Introductionmentioning

confidence: 99%

Modelling investigations of DBRs and cavities with photonic crystal holes for application in VCSELs

Ivanov¹,

Ho²,

Cryan³

et al. 2012

J. Opt.

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We investigate the reflection spectra of distributed Bragg reflectors (DBRs) and DBR cavities with and without photonic crystal holes fabricated within them. A finite-difference time domain (FDTD) electromagnetic model which is considered to provide the exact solution of Maxwell equations is used as a reference model. Two simplified modelling approaches are compared to the FDTD results: an effective index model where the individual DBR constituent layers penetrated by holes possess an effective index and a spatial loss model where optical losses are introduced spatially where the holes are fabricated. Results of the FDTD and the spatial loss model show that optical loss determines the properties of an etched DBR and DBR cavity when the lattice constant of the holes of exceeds 1 μm and the hole depth is small. The spatial loss model compares well to the FDTD results for holes with a lattice period exceeding 1 μm. We also consider the realistic effect of angling the sides of the etched holes.

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Electro-Thermal Analysis of Oxide-Confined Vertical-Cavity Lasers

Cited by 11 publications

References 28 publications

Electronic Properties of InGaN/GaN Vertical‐Cavity Lasers

Electronic Properties of InGaN/GaN Vertical‐Cavity Lasers

Thermal analysis of high-bandwidth and energy-efficient 980 nm VCSELs with optimized quantum well gain peak-to-cavity resonance wavelength offset

Modelling investigations of DBRs and cavities with photonic crystal holes for application in VCSELs

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