Electro-thermal coupling analysis methodology for RF circuits

Gomez, Didac; Dufis, Cédric Yvan; Altet, Josep; Mateo, D.; González, José

doi:10.1016/j.mejo.2011.04.011

Cited by 11 publications

(5 citation statements)

References 21 publications

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“…This technique operates as follows: two tones of high frequency f 1 and f 2 = f 1 + Δf (Δf being, for instance, 1 kHz) are applied to the input of the RF-CUT (see Fig. 1a) and, as a consequence of the frequency mixing generated by Joule effect [13], the RF-CUT dissipates power at low frequency (i.e. at Δf) with information about the performance at high frequency (i.e.…”

Section: On-chip Thermal Testing Techniquementioning

confidence: 99%

“…the sensitivity to temperature) rather than the accuracy. The amplitude of the temperature change to be detected depends on several factors (such as the operating frequency, the dissipated power, and the distance between the CUT and the temperature sensor), but values around tenths [8] or a few units of Kelvin [13] are expected. In the literature, we can find other thermal applications interested in measuring changes of temperature rather than the absolute value of temperature.…”

Section: On-chip Thermal Testing Techniquementioning

confidence: 99%

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On-Chip Thermal Testing Using MOSFETs in Weak Inversion

Reverter

Altet

2015

IEEE Trans. Instrum. Meas.

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Abstract-This paper analyses the feasibility of using metal-oxide-semiconductor field-effect transistors (MOSFET) operating in weak inversion as temperature sensors for on-chip thermal testing applications. MOSFETs in weak inversion are theoretically analyzed so as to know how their sensitivity to temperature depends on both dimensions and bias current. Theoretical predictions are then compared with simulations and experimental data resulting from MOSFETs fabricated in a commercial 0.35 μm CMOS technology. MOSFETs are experimentally subjected to changes of temperature generated by either a heating chamber or an on-chip power dissipating device. The performance of MOSFETs in weak inversion is also compared with that in strong inversion and with that of parasitic bipolar junction transistors (BJT). In the context of on-chip thermal testing, MOSFETs in weak inversion offer advantages in terms of layout area, linearity, current consumption and spread of the sensitivity to temperature due to process variations.

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Section: On-chip Thermal Testing Techniquementioning

confidence: 99%

Section: On-chip Thermal Testing Techniquementioning

confidence: 99%

On-Chip Thermal Testing Using MOSFETs in Weak Inversion

Reverter

Altet

2015

IEEE Trans. Instrum. Meas.

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“…Likewise, even when not activated, the temperature of PA2 reaches 50°C. Experimental verification of these results is difficult with the PAs placed inside the package, although measurements by integrated temperature sensors have been evaluated in [6]. …”

Section: A Temperaturementioning

confidence: 99%

Analysis of thermal coupling effects in integrated MIMO transmitters

Baptista

Buisman

Vaz

et al. 2017

2017 IEEE MTT-S International Microwave Symposium (IMS)

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Abstract-This paper presents a detailed analysis of thermal coupling and self-heating effects in highly integrated wireless transmitters. A MIMO transmitter prototype consisting of two closely integrated power amplifiers was built and modelled through microwave and thermal characterizations. The thermal behavior was extracted using FEM software and modelled with an equivalent RC network. The PA model was obtained experimentally using a pulsed setup. An RF-thermal simulator was developed and used with the models to predict joint thermal and electrical behavior. Measurements with modulated communication signals were done and compared with the simulator to demonstrate its feasibility for analysis of thermal effects in highly integrated transmitter applications.

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“…As for the variation of V offset from the expected value, Ref. [14] shows that this sensor has a simulated value of 0.68 V, and a measured value of 0.58 V (V DD = 1.2 V). The built-in temperature sensor has been designed to be self-biased since it only requires a supply voltage of 1.2 V and a ground.…”

Section: Circuit Description and Electrical Characterizationmentioning

confidence: 99%