Electro-thermal finite element analysis and verification of power module with aluminum wire

Liao, Li-Ling; Hung, Tuan‐Yu; Liu, Chun-Kai; Li, Wei; Dai, Ming-Ji; Chiang, Kuo‐Ning

doi:10.1016/j.mee.2013.12.033

Cited by 30 publications

(8 citation statements)

References 8 publications

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“…The cooling method chosen is often driven by the kind of failure mode anticipated and how fast to reach the intended temperature swing. Some cooling methods such as forced air cooling, liquid cooling and constant base plate or heat sink temperature (isothermal) have been used both experimentally and in simulations [17,18,19,20]. However, equivalent convective heat transfer coefficient which often represents a forced air or water cooling is more widely used by researchers than a fixed temperature boundary condition in simulation.…”

Section: Finite Element Analysis (Fea) Simulationmentioning

confidence: 99%

“…Also current crowding effect at the bond interface will increase if a very small bond thickness is used. This could lead to highly localised differences in heat dissipation as well as the electric field strength increasing the impact of electro-migration [19]. Therefore, the design optimization of the ribbon bond should focus on ribbon bond width not more than 2mm and varying the loop heights and thicknesses.…”

Section: Response Surface Model and Sensitivity Analysismentioning

confidence: 99%

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An analysis of the reliability and design optimization of aluminium ribbon bonds in power electronics modules using computer simulation method

Nwanoro

Yin

et al. 2018

Microelectronics Reliability

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Section: Finite Element Analysis (Fea) Simulationmentioning

confidence: 99%

Section: Response Surface Model and Sensitivity Analysismentioning

confidence: 99%

An analysis of the reliability and design optimization of aluminium ribbon bonds in power electronics modules using computer simulation method

Nwanoro

Yin

et al. 2018

Microelectronics Reliability

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“…A high temperature in the IGBT chip may generate the coefficient of thermal expansion (CTE) mismatch with aluminum wires, resulting in wire lift-off from the interface between the aluminum pad and aluminum wires. The simulatedtemperature of IGBT chip was validated and compared with the measurement results [14]. Validation results indicate that the predicted chip temperature from the electro-thermal coupling simulation is reliable.…”

Section: Introductionmentioning

confidence: 99%

Study on configuration design of interconnection in high power module

Liao

Hung

Liu

et al. 2014

2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and

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In a high power module, a high electrical load may cause electromigration and induce the joule heating, subsequently raising the chip temperature. Temperature excursion in the IGBT chip may produce thermal stress, inducing failure in the metal wire and chip. Those failure modes degrade the reliability of a power module. This study elucidates the coupling behavior of a high power module through electro-thermal coupling analysis and thermo-mechanical analysis.Additionally, the configuration design of an aluminum wire is simulated and implemented. Related design parameters, e.g., wire arrangement position, wire number, wire bonding perimeter and wire height, are studied and the design trend of a metal wire is analysed and suggested as well.

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“…Moreover, the presence of bond wires is often neglected in thermal models. In [16], though, a higher current density is shown to occur at the interfaces between bond wires and the die with respect to other regions on the die's active area which can also influence the temperature distribution.…”

Section: Introductionmentioning

confidence: 99%

Thermal modeling of wire-bonded power modules considering non-uniform temperature and electric current interactions

Akbari

Bahman

Reigosa

et al. 2018

Microelectronics Reliability

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To assess power devices' reliability, it is crucial to have a relatively accurate thermal approach which provides valid temperature estimates. In this paper, for two commonly used Si IGBT and SiC MOSFET power modules, the electric current-induced effects on bond wires and the correlation between the non-uniform temperature distribution and electrical conductivity of the sensitive constituent materials are studied. In addition, a more realistic active area of the modules is defined by excluding inactive regions, i.e., the gate area, gate runners, and termination ring. Also, the electric current distribution among parallel bond wires attached to the dies' metalization pads is investigated. Comparisons made between an approach which includes all the above aspects with a conventional one where uniform heat is injected into semiconductor dies, although showing acceptable error in Si IGBTs, result in a very significant difference in SiC MOSFETs.

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Electro-thermal finite element analysis and verification of power module with aluminum wire

Cited by 30 publications

References 8 publications

An analysis of the reliability and design optimization of aluminium ribbon bonds in power electronics modules using computer simulation method

An analysis of the reliability and design optimization of aluminium ribbon bonds in power electronics modules using computer simulation method

Study on configuration design of interconnection in high power module

Thermal modeling of wire-bonded power modules considering non-uniform temperature and electric current interactions

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