Electro-thermal modeling for InxGa1-xN/GaN based quantum well heterostructures

Gazzah, Mohamed Hichem; Chouchen, Bilel; Fargi, Abdelaali; Belmabrouk, Hafedh

doi:10.1016/j.mssp.2019.01.011

Cited by 22 publications

(10 citation statements)

References 33 publications

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“…On the one hand, by increasing the indium rate from 20% to 60%, the Δ Ec increased from 0.532 to 1.358 eV at room temperature [35]. The increase in indium content improves carrier transport between the InGaN/GaN interfaces because the conduction band offset at the interfaces becomes larger [31]. We notice from Figure 4a that the Fermi energy increases within a temperature range from 300 to 600 K. On the other hand, the Fermi energy decreases due to the increase in the indium rate and the number of wells.…”

Section: Resultsmentioning

confidence: 99%

“…The second approach has been adopted by the authors to investigate heat transfer in MOSFET [28,29,30]. It has also been used to investigate an InGaN heterostructures [31].…”

Section: Governing Equations and Numerical Methodsmentioning

confidence: 99%

“…In the framework of effective mass theory, the subband structure of the InGaN/GaN heterostructure is investigated by solving simultaneously the Schrödinger and Poisson equations [31]:−ħ22d dz(1m*(z)dψν,kz(z)dz)+Ec(z)ψν,kz(z) = Evψν,kz(z) ε0ddz(εr(T,x)d(VH+VP(x))dz) = e2(σseδ(z−z0)+ND−n(z)) ∑v...…”

Section: Governing Equations and Numerical Methodsmentioning

confidence: 99%

“…Ec is the total potential energy. The details of this model are well presented in the reference [31].…”

Section: Governing Equations and Numerical Methodsmentioning

confidence: 99%

“…The convergence is obtained when the difference on the Fermi level associated to two consecutive iterations is smaller than 10−4 eV. The numerical code has been validated in previous works [31].…”

Section: Governing Equations and Numerical Methodsmentioning

confidence: 99%

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Numerical Modeling of the Electronic and Electrical Characteristics of InGaN/GaN-MQW Solar Cells

et al. 2019

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In this paper, a numerical model allows to analyze the photovoltaic parameters according to the electronic properties of InxGa1−xN/GaN MQW solar cells under the effect of temperature, the number of quantum wells and indium composition. The numerical investigation starts from the evaluation through the finite difference (FDM) simulation of the self-consistent method coupled with the photovoltaic parameters taking into account the effects of the spontaneous and piezoelectric polarization. The results found were consistent with the literature. As expected, the temperature had a negative impact on the performance of InGaN/GaN MQW solar cells. However, increasing the number of quantum wells improves cell performance. This positive impact further improves with the increase in the indium rate. The obtained results were 28 mA/cm2 for the short-circuit current density, 1.43 V for the open-circuit voltage, and the obtained conversion efficiency was 31% for a model structure based on 50-period InGaN/GaN-MQW-SC under 1-sun AM1.5G.

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Section: Resultsmentioning

confidence: 99%

“…The second approach has been adopted by the authors to investigate heat transfer in MOSFET [28,29,30]. It has also been used to investigate an InGaN heterostructures [31].…”

Section: Governing Equations and Numerical Methodsmentioning

confidence: 99%