2005
DOI: 10.1007/s11664-005-0216-0
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Electro-thermal resistance of GaAs interconnects

Abstract: This paper describes the effect of steady-state heating on the electrical and thermal resistance of interconnects on GaAs. Examined is a typical dual-layer metal interconnect system, common to GaAs processing. The interconnect system is considered in three parts, the interconnect metals, the Si 3 N 4 dielectric surrounding the metal, and the Al x Ga 1-x As epitaxial substrate. Using a meandering line as a test structure, measurements show how the direct current (DC) resistance increases with both temperature a… Show more

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