Electroabsorption in laminatedGaSe x S1−x semiconductors in the fundamental-absorption edge region

Abdullayeva, S.G.; Gadjiyev, V. A.; Kerimova, T. G.; Salayev, Eldar Yu.

doi:10.1007/bf02723518

Nuov Cim B

1977

DOI: 10.1007/bf02723518

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Electroabsorption in laminatedGaSe x S1−x semiconductors in the fundamental-absorption edge region

S.G. Abdullayeva

V. A. Gadjiyev

T. G. Kerimova

et al.

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1979

2008

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Cited by 23 publications

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“…concentration ratio (N a /N d ) as 0.97 and a donor -acceptor concentration difference of d a with M -the reduced effective mass -being 0.20 0 m[23]. The energy level being 0.31 eV obtained from the analysis of the resistivity data is not comparable to the donor energy level being 0.45 eV revealed from the above data analysis.…”

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confidence: 63%

Determination of carrier effective mass, impurity energy levels, and compensation ratio in Ga₄Se₃S layered crystals by Hall effect measurements

Qasrawi

Gasanly

2008

Physica Status Solidi (a)

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In this work, the dark electrical resistivity, charge carriers density and Hall mobility of Ga4Se3S single crystals have been measured and analyzed in the temperature region of 200–350 K. The data analyses have shown that this crystal exhibits an extrinsic n‐type of conduction. The temperature‐dependent dark electrical resistivity analysis reflected the existence of energy level as 0.31 eV. The temperature dependence of carrier density was analyzed by using the single donor‐single acceptor model. The latter analysis allowed the determination of electron effective mass as 0.38m0, hole effective mass as 0.42m0, donor impurity energy level as 0.45 eV, acceptor–donor concentration ratio (Na/Nd) as 0.97 and a donor–acceptor concentration difference as Nd – Na = 1.5 × 1011 cm–3. The Hall mobility of Ga4Se3S is found to increase with decreasing temperature following a power law of slope of ∼(–6.3). The abnormal behavior of mobility was attributed to the domination of phonon scattering and/or crystals anisotropy. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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mentioning

confidence: 63%

Determination of carrier effective mass, impurity energy levels, and compensation ratio in Ga₄Se₃S layered crystals by Hall effect measurements

Qasrawi

Gasanly

2008

Physica Status Solidi (a)

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Electrical and photoconductive properties of GaS0.75Se0.25mixed crystals

Karabulut¹,

Parlak²,

Yılmaz³

et al. 2005

Cryst. Res. Technol.

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The conductivity, mobility, photoconductivity and photo response measurements in GaS 0.75 Se 0.25 mixed crystals were carried out in the temperature range of 150-450 K. The room temperature conductivity, mobility and electron concentration values were 10 -9 (Ω-cm), 48 cm 2 V -1 s -1 and ~10 9 cm -3 , respectively. Two donor levels were obtained from temperature-dependent conductivity and carrier concentration, located at energies of about 755 and 465 meV below the conduction band. Single donor-single acceptor analysis yields the same donor level at 465 meV with donor and acceptor concentrations of 8.7x1014 and 5.3x10 13 cm -3 , respectively. The mobility-temperature dependence shows that ionized impurity scattering dominates the conduction up to the temperature 310 K with different temperature exponent, while above this critical temperature; the phonon scattering is dominant conduction mechanism. From the photo-response spectra, the maximum photocurrent was observed for all the samples at 2.42 eV, and varied slightly with temperature. Moreover, the photocurrent-light intensity dependence in these crystals obeys the power law, I ph ∝ φ γ with γ between 1.7 and 2.0 for various applied fields and temperatures.

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Cathodoluminescence of gase single crystals

Rainò

Mancini

Murri

et al. 1979

Phys. Stat. Sol. (a)

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The cathodoluminescence of a large number of samples obtained from two different single crystal ingots of GaSe is investigated at two temperatures ((115 ± 5) and (285 ± 5 K)) and at various excitation levels. The excitation is produced by a field emitting diode constituted of a tungsten cold emission cathode and an anode consisting of a collimator and a target. Both at low and high temperatures all the analyzed samples show well structured cathodoluminescence spectra, consisting of three regions of emission. These are characterized by emission due to free excitons, exciton–exciton and exciton–carrier scattering processes, and donor states involving transitions, respectively. The relative intensities of the various regions of emission prove to be dependent on the temperature, excitation intensity, and purity or perfection of the crystals.

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Electroabsorption in laminatedGaSe x S1−x semiconductors in the fundamental-absorption edge region

Cited by 23 publications

References 8 publications

Determination of carrier effective mass, impurity energy levels, and compensation ratio in Ga₄Se₃S layered crystals by Hall effect measurements

Determination of carrier effective mass, impurity energy levels, and compensation ratio in Ga₄Se₃S layered crystals by Hall effect measurements

Electrical and photoconductive properties of GaS0.75Se0.25mixed crystals

Cathodoluminescence of gase single crystals

Contact Info

Product

Resources

About

Electroabsorption in laminatedGaSe x S1−x semiconductors in the fundamental-absorption edge region

Cited by 23 publications

References 8 publications

Determination of carrier effective mass, impurity energy levels, and compensation ratio in Ga4Se3S layered crystals by Hall effect measurements

Determination of carrier effective mass, impurity energy levels, and compensation ratio in Ga4Se3S layered crystals by Hall effect measurements

Electrical and photoconductive properties of GaS0.75Se0.25mixed crystals

Cathodoluminescence of gase single crystals

Contact Info

Product

Resources

About

Determination of carrier effective mass, impurity energy levels, and compensation ratio in Ga₄Se₃S layered crystals by Hall effect measurements

Determination of carrier effective mass, impurity energy levels, and compensation ratio in Ga₄Se₃S layered crystals by Hall effect measurements