Electroabsorption modulated laser for long transmission spans

Salvatore, R.A.; Sahara, R.; Bock, Matthias; Libenzon, I.

doi:10.1109/3.998618

Cited by 58 publications

(30 citation statements)

References 23 publications

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“…Both theory and experiment 7 show chirp has to be in the range between -0.5 and -1, in order to achieve highest bit-rate and transmission distance product in standard single mode fiber which has positive dispersion. For the chirp to be in the desired range, the bandwidth of the EAM is only about 5 nm as is shown from the calculation in Fig.…”

Section: Eam Designmentioning

confidence: 98%

BEAM: design and characterization of a 10-Gb/s broadband electroabsorption modulator

McDougall¹,

Qiu²,

Ternent³

et al. 2004

SPIE Proceedings

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The market for data modulators at 10 Gb/s is currently dominated by Mach-Zehnder phase modulators fabricated in LiNbO 3 (LN). However they are relatively expensive to manufacture and large compared to semiconductor devices. InP based electroabsorption modulators (EAMs), are more compact; however they have a limited bandwidth (5-8 nm) over which chirp is in the correct range to allow >80 km reach. This paper reports the broadband electroabsorption modulator (BEAM) concept in which reach performance in line with LN modulators can be achieved using integrated InP components. The BEAM consists of a series of EAMs, each one tuned to give the correct chirp over a certain wavelength range. The bandwidth of the BEAM can be extended to cover the C-band (1535nm -1565nm). In addition, a semiconductor optical amplifier (SOA) is serially integrated in order to recover the total insertion loss. Details of the design, fabrication and testing of prototype BEAM chips operating at 10 Gb/s are reported. Quantum well intermixing technology is employed to realize the multiple bandgaps required for the prototype chips which are fabricated on semiinsulating InP substrates. Highlights of the operational characteristics of the BEAM chips include extinction ratios of up to 12 dB at 10 Gb/s and SOA gains of 20 dB.

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Section: Eam Designmentioning

confidence: 98%

BEAM: design and characterization of a 10-Gb/s broadband electroabsorption modulator

McDougall¹,

Qiu²,

Ternent³

et al. 2004

SPIE Proceedings

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“…The typical transfer function of an EAM follows the applied electrical drive V according to Eq. (1): where ε min is the minimum extinction and V a and α are fitting parameters [7]. Figure 2(a) shows the measured and modeled (V a = −1.12V, α = 2.7) transmission T of the utilized EAM as well as the respective curves for a Mach-Zehnder modulator (MZM), whose V π is adjusted to have the same modulation index per electrical drive as the typically more efficient EAM [8].…”

Section: High Bit-rate Tdm-pon With Low Drive 4-pammentioning

confidence: 99%

Quaternary TDM-PAM as upgrade path of access PON beyond 10Gb/s

Verbrugghe¹,

Schrenk²,

Bauwelinck³

et al. 2012

Opt. Express

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Abstract:A 20 Gb/s quaternary TDM-PAM passive optical network with chirped and non-linear optical transmitters is experimentally demonstrated. The migration from legacy TDM-PONs and the implications of using available 10 Gb/s components are analyzed. We show that a loss budget of 27.3 dB is compatible together with a packet power ratio of 10 dB between loud and soft optical network units. Vetter, and F. C. Chang, "Experiments on 10Gb/s fast settling high sensitivity burst-mode receiver with on-chip auto-reset for 10G-GPONs", Optical Fiber Communication (OFC), NTu1J.4 (2012). 7. R. Salvatore, R. Sahara, M. Bock, and I. Libenzon, "Electroabsorption modulated laser for long transmission spans," IEEE J. Quantum Electron. 38(5), 464-476 (2002 Fujita, M. Akita, and K. Motoshima, "Forward error correction based on block turbo code with 3-bit soft decision for 10-Gb/s optical communication systems," IEEE J. Sel. Top. Quantum Electron. 10(2), 376-386 (2004).

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“…1. A detailed report on the fabrication steps is given in (2) . The active area consists of an InGaAsP/InGaAsP multiple quantum well (MQW) structure on n-InP substrate.…”

Section: Device and Measurement Setupmentioning

confidence: 99%

“…There is considerable interest in integrated DFB laser and EA modulator (EAM) as an attractive light source for high bit rate and long haul optical fiber communication systems because of their low driving voltage (1) , small size, compact structure, and low or even negative chirp characteristics (2) , and easy integration compared with others alternatives. However they show a red-shift of emission wavelength with an applied voltage for EAM.…”

Section: Introductionmentioning

confidence: 99%

Thermal Crosstalk in Integrated DFB Laser-EA Modulators

2007

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The wavelength red-shifting of integrated DFB (Distributed feedback) laser and EA (Electro-absorption) modulator with applied modulator bias voltage has been investigated and this phenomenon is estimated to be due to non-uniform temperature distribution in the device and caused by thermal crosstalk. From the experimental data and thermal analysis, increased absorbed photocurrents associated with EA modulator bias and dissipated power in the EA modulator lead to the temperature increase in continuously operating DFB laser, resulting wavelength red-shifting.

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Electroabsorption modulated laser for long transmission spans

Cited by 58 publications

References 23 publications

BEAM: design and characterization of a 10-Gb/s broadband electroabsorption modulator

BEAM: design and characterization of a 10-Gb/s broadband electroabsorption modulator

Quaternary TDM-PAM as upgrade path of access PON beyond 10Gb/s

Thermal Crosstalk in Integrated DFB Laser-EA Modulators

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