Electroabsorption Modulators Suitable for 100-Gb/s Ethernet

Operation of low driving voltage cascaded modulator over non-cascaded modulator for 4 dB extinction ratio at 100 giga bit per second (Gbps)

“…At 0.4 V P-P modulating voltage, the cascaded modulator has 3 dB bandwidth of 110 GHz while the non-cascaded modulator has 112 GHz. Both results are comparable with previous works ∼100 GHz at 3.0 V P-P [5] and at 2.0 V P-P [9]. The 3 dB bandwidth of a RC circuit can be calculated by using 0.35 s in GHz [11], where transition time, s is measured from 10 to 90% of the eye diagram.…”

“…TWEAM with low reflection factor (S 11 ) has been reported to reach bandwidths of the order of 100 GHz [4,5,7,8]. It has also been reported that 10 dB extinction ratio (ER) can be reached with 3 dB bandwidth ∼100 GHz with record low 2 V P-P input driving voltage for 230 m total active device length [9] and 2.5 V P-P for 180 m total active length device [6]. A cascaded TWEAM (CTWEAM) has been reported to reach more than 100 GHz 3 dB bandwidth with 10 dB ER at a driving voltage of 1 V P-P in simulations based on measurements [1].…”

“…Before this modulator, no modulator had 10 dB ER for such a low driving voltage. The main objective of this paper is to describe the performance improvements for CTWEAM compared to TWEAM to reach 4 and 10 dB ERs for Ethernet and Telecommunication data transmission by using On-Off Keying (OOK) with more than 100 GHz 3 dB bandwidth at low driving voltage which has not been reached in previous works [5,6,9]. Models for both types of modulators have been studied using the circuit simulator SPICE for large signal modeling.…”

Device Requirements for Optical Interconnects to Silicon Chips

“…They are thought theoretically to have fundamental speed limits well below a picosecond [160]. Quantum well modulator devices have been tested at high speeds [161], [162] up to 500 Gb/s effective modulation speed [163].…”

Electro-optical and lasing properties of hybrid quantum dot/quantum well material system for reconfigurable photonic devices

“…Monolithically integrated electroabsorption modulated lasers (EML) utilizing quantumconfined Stark effect (QCSE) meet these requirements with demonstrated speeds as high as 500 Gb/s. 6,7 For stable operation at higher environmental temperatures, GaAs is the preferred material system. In addition to higher thermal conductivity and mechanical strength, GaAs offers high refractive index contrast and larger band offset versus InPbased materials.…”