Electrochemical carrier concentration profiling in silicon

Sharpe, Catherine; Lilley, P.; Elliott, C. R.; Ambridge, T.

doi:10.1049/el:19790444

Cited by 29 publications

(13 citation statements)

References 3 publications

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“…By borrowing well-known language from semiconductor physics 16 we should be able to make some simple predictions about the electrowetting behaviour of the LIS system by making the analogy with the well-known metal-insulator-semiconductor (MIS) system. Indeed it is well known that depletion layers form at electrolyte-semiconductor interfaces 28 29 ; this effect has been exploited for commercial purposes 30 31 and electrolyte-semiconductor 32 and electrolyte-insulator-semiconductor 33 interfaces have been used for transistor-based sensing 34 35 and carbon nanotube transistors 36 .…”

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confidence: 99%

Moving liquids with light: Photoelectrowetting on semiconductors

Arscott

2011

Sci Rep

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By linking semiconductor physics and wetting phenomena a brand new effect termed “photoelectrowetting-on-semiconductors” is demonstrated here for a conducting droplet resting on an insulator-semiconductor stack. Optical generation of carriers in the space-charge region of the underlying semiconductor alters the capacitance of the liquid-insulator-semiconductor stack; the result of this is a modification of the wetting contact angle of the droplet upon illumination using above band gap light. The effect is demonstrated using commercial silicon wafers, both n- and p-type having a doping range spanning four orders of magnitude (6×1014−8×1018 cm−3), coated with a commercial amorphous fluoropolymer insulating film (Teflon®). Impedance measurements confirm that the observations are semiconductor space-charge related effects. The impact of the work could lead to new silicon-based technologies in areas such as Laboratory-on-a-Chip, Microfluidics and Optofluidics.

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confidence: 99%

Moving liquids with light: Photoelectrowetting on semiconductors

Arscott

2011

Sci Rep

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“…On the other hand, a significant decrease of the ER signal and the slope of Mott-Schottky plot would be expected whenever the external modulation changes the number of ionized interface states N~s strong enough to cause nonnegligible ac voltage drop dUH = edN~s/CH across the Hetmholtz layer. In this case, the relation for ER spectra in the low-field regime 16 is given by AR 2e e dN~s~ L(hv)hU [2] and the slope of the Mott-Schottky plot 17 is expressed as d(C -~) 2 (1 e dN~s~ -~ dU -eeeoN +~ dust/ [3] where L(hv) is the ER line shape function, CH is the HelmhoItz capacitance, AU is the amplitude of the modulating voltage, Use is the voltage drop aeross the spaee charge layer. According to Eq.…”

Section: Discussionmentioning

confidence: 99%

Flatband Potential Studies at the n‐Si/Electrolyte Interface by Electroreflectance and C‐V Measurements

Röppischer

Bumai

Feldmann

1995

J. Electrochem. Soc.

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The properties of the n-St electrode in both aqueous and organic solution for nonstabilizing conditions were studied by the electrorefleetance and capacitance techniques. A shift of the flatband potential in the anodic direction up to 0 VseE has been observed for both solutions and was more pronounced for the aqueous one. The strong influence of polarization under anodic potentials on the properties of the St/electrolyte junction is shown. It is demonstrated that the flatband potential shifts for solutions without a stabilizing agent is caused by the slow oxidation process and related interface state evolution. Anomalously high electroreflectanee signals have been observed for the potentials where a capacitance peak associated with the interface states is detected. We suppose the interaction of hydrogen-related species in a subsurface Si layer with interface states to be responsible for this specific electrorefleetance modulation.

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“…Dissolution chemistry depends critically on the electrolyte composition, and different recipes have been established for GaAs (7), InP (8), and Si (9). If the semiconductor is doped ntype, then no free holes will be available and dissolution will not pro-ceed.…”

Section: Electrical Property Measurementsmentioning

confidence: 99%