2018
DOI: 10.1016/j.jallcom.2018.07.327
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Electrochemical deposition and characterization of ZnOS thin films for photovoltaic and photocatalysis applications

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Cited by 22 publications
(7 citation statements)
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“…Also, the defects at the interface of SnO 2 /perovskite cause ionic charge accumulation and nonradiative recombination, which have an effect on the cell performance. This study explores an alternative buffer layer ZnOS in PSCs which reduced interfacial loss and enhanced device performance with less hysteresis and is promising for several reasons: it is nonhazardous to the environment and can be easily produced by solution based technique at low temperature. , The key factor of using a ZnOS layer is that it has a variable band gap energy (2.7–3.8 eV), which allows it to absorb photon with high efficiency . The successful introduction of the ZnOS layer improved the open circuit potential ( V OC ) as well as PCE of the devices.…”
Section: Introductionmentioning
confidence: 99%
“…Also, the defects at the interface of SnO 2 /perovskite cause ionic charge accumulation and nonradiative recombination, which have an effect on the cell performance. This study explores an alternative buffer layer ZnOS in PSCs which reduced interfacial loss and enhanced device performance with less hysteresis and is promising for several reasons: it is nonhazardous to the environment and can be easily produced by solution based technique at low temperature. , The key factor of using a ZnOS layer is that it has a variable band gap energy (2.7–3.8 eV), which allows it to absorb photon with high efficiency . The successful introduction of the ZnOS layer improved the open circuit potential ( V OC ) as well as PCE of the devices.…”
Section: Introductionmentioning
confidence: 99%
“…As the common device architecture of perovskite solar cells constitutes a perovskite absorber material sandwiched between an electron transport layer (ETL) and a hole transport layer (HTL), researchers are also opting for non-toxic choices for the transport layers. Zinc oxysulphide (ZnOS) is being investigated as a wide bandgap [ 19 ] alternative for the commonly used CdS buffer layers in solar cells due to the carcinogenicity of CdS. Using ZnOS buffer layer with the appropriate deposition process is expected to positively affect the stability and the efficiency of the solar cell as well as improve the J sc and PCE [ 19 , 20 ].…”
Section: Introductionmentioning
confidence: 99%
“…Zinc oxysulphide (ZnOS) is being investigated as a wide bandgap [ 19 ] alternative for the commonly used CdS buffer layers in solar cells due to the carcinogenicity of CdS. Using ZnOS buffer layer with the appropriate deposition process is expected to positively affect the stability and the efficiency of the solar cell as well as improve the J sc and PCE [ 19 , 20 ]. Korir et al [ 21 ] claimed better PCE , J sc , V oc for ZnOS (11.54%, 18.50 mAcm −2 , 0.99 V, respectively) compared to TiO 2 (10.22%, 0.97 V, 16.50 mAcm −2 respectively) while comparing the performance of both materials used in the same cell structure.…”
Section: Introductionmentioning
confidence: 99%
“…These materials can be obtained as particulate materials (core-shell or composites) and thin films when deposited on alternating layers [2,3]. The use of thin films stands out in comparison to particulate materials because they do not generate residues after being treated, and they are easy to be reused [4]. Thin films can be obtained by various methods, such as atomic layer positioning [5], dip-coating [6], spin coating [7], and spray-pyrolysis [8].…”
Section: Introductionmentioning
confidence: 99%