Electrochemical Deposition of Germanium Sulfide from Room-Temperature Ionic Liquids and Subsequent Ag Doping in an Aqueous Solution

Abstract

A facile room-temperature electrochemical deposition process for germanium sulfide (GeS(x)) has been developed with the use of an ionic liquid as an electrolyte. The electrodeposition mechanism follows the induced codeposition of Ge and S precursors in ionic liquids generating GeS(x) films. The electrodeposited GeS(x) films were characterized by scanning electron microscopy-energy dispersive X-ray spectroscopy (SEM-EDS) and Raman and X-ray photoelectron spectroscopy (XPS). An aqueous-based Ag doping method was used to dope electrochemically grown GeS(x) films with controlled doping compared to the conventional process, which can be used in next-generation solid-state memory devices.

Photo-assisted electrodeposition of MoSxfrom ionic liquids on organic-functionalized silicon photoelectrodes for H2generation

“…[25][26][27] The stoichiometry of the lms can be controlled by the electrodeposition procedure; anodic deposition leads to the formation of MoS 3 , while cathodic deposition leads to the formation of MoS 2 . [31][32][33] Electrodeposition on semiconductor surfaces can be enhanced by exposure to light. 27,28 Much work to date has been performed in aqueous solutions, with the exception of two studies where MoS 2 was electrodeposited in ethylene glycol.…”

Electrodeposition of Semiconductors in Ionic Liquids

“…The room temperature electrodeposition of Ge and GeS x has also been reported in n-methyl-n-propylpiperidinium bis(trifluoromethylsulfonyl)imide ([C 3 mpip] [N(Tf) 2 ]) ionic liquid containing GeCl 4 and 1,4-butanedithiol [54]. The deposited films of GeS x were smooth, porous, and had an amorphous glassy character.…”

Electrodeposition in Ionic Liquids

“…Different from the mechanism of the growth of CuS and Co 9 S 8 , it was proposed that the formation of SnS proceeded via the interfacial reaction between S 2− and Sn 2+ . On the other hand, GeS x was fabricated from N ‐methyl‐ N ‐propylpiperidinium bis(trifluoromethanesulfonyl)amide ([PP 13 ]NTf 2 ) containing 1,4‐butanedithiol and GeCl 4 , which was attributed to the induced codeposition of Ge and S precursors in ILs …”